- 108 -
.412(10.5)
MAX
.185(4.70)
.175(4.44)
.055(1.40)
.045(1.14)
.27(6.86)
.23(5.84)
.11(2.79)
.10(2.54)
.025(0.64)
.014(0.35)
.154(3.91)
.148(3.74)
DIA
PIN1 2
.113(2.87)
.103(2.62)
.16(4.06)
.14(3.56)
.037(0.94)
.027(0.68)
.205(5.20)
.195(4.95)
.594(15.1)
.587(14.9)
.56(14.22)
.53(13.46)
MBR735 THRU MBR7100
7.5 AMPS. Schottky Barrier Rectifiers
Voltage Range
35 to 100 Volts
Current
7.5 Amperes
F
eatures
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260
oC/10 seconds,0.25”(6.35mm)from case
M
echanical Data
Cases: JEDEC TO-220A molded plastic body
Terminals: Lead solderable per MIL-STD-750, Method
2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
TO-220A
Dimensions in inches and (millimeters)
M
aximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number Symbol
MBR
735
MBR
745
MBR
750
MBR
760
MBR
790
MBR
7100
Unit
s
Maximum Recurrent Peak Reverse Voltage VRRM 35 45 50 60 90 100
V
Maximum RMS Voltage VRMS 24 31 35 42 63 70 V
Maximum DC Blocking Voltage VDC 35 45 50 60 90 100 V
Maximum Average Forward Rectified Current
See Fig. 1 I(AV) 7.5 A
Peak Repetitive Forward Current (Square Wave, 20KHz) at
Tc=105oC IFRM 15.0 A
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method ) IFSM 150 A
Peak Repetitive Reverse Surge Current (Note 1) IRRM 1.0 0.5 A
Maximum Instantaneous Forward Voltage at (Note 2)
I
F=7.5A,Tc=25℃
I
F=7.5A,Tc=125℃
I
F=15A,Tc=25℃
I
F=15A,Tc=125℃
VF –
0.57
0.84
0.72
0.75
0.65
–
–
0.92
0.82
–
–
V
Maximum Instantaneous Reverse Current @ Tc =25℃
at Rated DC Blocking Voltage (Note 1) @ Tc=125℃ IR 0.1
15.0 0.5
50 0.1
– mA
mA
Voltage Rate of Change (Rated VR) Dv/dt 10,000 V/uS
Typical Junction Capactance Cj 360 280 200 pF
Maximum Thermal Resistance, (Note 3)
R
θ
JC
R
θ
JA 5.0
15.0 ℃/W
Operating Junction Temperature Range TJ -65 to +150 ℃
Storage Temperature Range TSTG -65 to +175 ℃
Notes: 1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plated.
- 109 -
RATINGS AND CHARACTERISTIC CURVES (MBR735 THRU MBR7100)
FIG.1- FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT. (A)
050 100 150
0
2
4
6
8
10
CASE TEMPERATURE. ( C)
o
RESISTIVE OR
INDUCTIVE LOAD
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT. (A)
110 100
25
50
75
125
100
150
175
NUMBER OF CYCLES AT 60Hz
Tj=Tj max.
8.3ms Single Half Sine Wave
JEDEC Method
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT. (A)
0.6 0.8 1.0 1.10.90.70.50.40.30.20.101.2
0.1
0.01
1
10
40
FORWARD VOLTAGE. (V)
Pulse Width=300 s
1% Duty Cycle
Tj=25 C
0
Tj=125 C
0
MBR735-MBR745
MBR750-MBR760
MBR790-MBR7100
FIG.4- TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT.(mA)
020 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
0.001
0.1
0.01
1
10
50
MBR735-MBR745
MBR750-MBR7100
Tj=125 C
0
Tj=25 C
0
Tj=75 C
0
FIG.6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS
TRANSIENT THERMAL IMPEDANCE. ( C/W)
O
10.01 0.1 10 100
0.1
10
1
100
T, PULSE DURATION. (sec)
FIG.5- TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE.(pF)
0.1 1.0 10 100
40
100
1,000
4,000
REVERSE VOLTAGE. (V)
Tj=25 C
f=1.0MHz
Vsig=50mVp-p
0
MBR735-MBR745
MBR750-MBR7100
MBR735-MBR745
MBR750 & MBR760
MBR790-MBR7100
