2N6282 2N6283 2N6284
MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N6285 2N6286 2N6287 UNITS
Collector-Base Voltage VCBO 60 80 100 V
Collector-Emitter Voltage VCEO 60 80 100 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 20 A
Peak Collector Current ICM 40 A
Continuous Base Current IB 0.5 A
Power Dissipation PD 160 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance JC 1.09 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICEX V
CE=Rated VCEO, VEB=1.5V 0.5 mA
ICEX V
CE=Rated VCEO, VEB=1.5V, TC=150°C 5.0 mA
ICEO V
CE=½Rated VCEO 1.0 mA
IEBO V
EB=5.0V 2.0 mA
BVCEO I
C=100mA, (2N6282, 2N6285) 60 V
BVCEO I
C=100mA, (2N6283, 2N6286) 80 V
BVCEO I
C=100mA, (2N6284, 2N6287) 100 V
VCE(SAT) I
C=10A, IB=40mA 2.0 V
VCE(SAT) I
C=20A, IB=200mA 3.0 V
VBE(SAT) I
C=20A, IB=200mA 4.0 V
VBE(ON) V
CE=3.0V, IC=10A 2.8 V
hFE V
CE=3.0V, IC=10A 750 18K
hFE V
CE=3.0V, IC=20A 100
hfe V
CE=3.0V, IC=10A, f=1.0kHz 300
fT V
CE=3.0V, IC=10A, f=1.0MHz 4.0 MHz
Cob V
CB=10V, IE=0, f=100kHz (NPN types) 400 pF
Cob V
CB=10V, IE=0, f=100kHz (PNP types) 600 pF
2N6282 2N6283 2N6284 NPN
2N6285 2N6286 2N6287 PNP
COMPLEMENTARY SILICON
DARLINGTON POWER
TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6282, 2N6285
series devices are complementary silicon monolithic
Darlington transistors, manufactured by the epitaxial
base process, designed for general purpose high
current, high gain amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-3 CASE
R1 (4-February 2014)
www.centralsemi.com
2N6282 2N6283 2N6284 NPN
2N6285 2N6286 2N6287 PNP
COMPLEMENTARY SILICON
DARLINGTON POWER
TRANSISTORS
TO-3 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
Case) Collector
MARKING:
FULL PART NUMBER
www.centralsemi.com
R1 (4-February 2014)
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