GBPC35005 - GBPC3510 IATF 0113686 SGS TH07/1033 GLASS PASSIVATED SINGLEPHASE BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 35 Amperes BR50 0.728(18.50) 0.688(17.40) FEATURES : * * * * * * * TH09/2479 TH97/2478 www.eicsemi.com Glass passivated junction chip High surge current capability High current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free 0.685(16.70) 1.137(28.90) 0.618(15.70) 1.114(28.30) 0.570(14.50) 0.530(13.40) 0.210(5.30) 0.200(5.10) 0.658(16.70) 0.618(15.70) MECHANICAL DATA : * Case : Molded plastic with heatsink integrally mounted in the bridge encapsulation * Epoxy : UL94V-0 rate flame retardant * Terminals : plated .25" (6.35 mm). Faston * Polarity : Polarity symbols marked on case * Mounting position : Bolt down on heat-sink with silicone thermal compound between bridge and mounting surface for maximum heat transfer efficiency. * Weight : 17.1 grams 0.252(6.40) 0.248(6.30) 0.100(2.50) 0.090(2.30) 0.032(0.81) 0.028(0.71) 0.905(23.0) 0.826(21.0) 0.310(7.87) 0.280(7.11) Metal Heatsink Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 C ambient temperature unless otherwise noted. RATING SYMBOL GBPC GBPC GBPC GBPC GBPC GBPC GBPC 35005 3501 3502 3504 3506 3508 3510 UNIT Maximum Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Bridge Input Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Current Tc = 50 C (Fig.1) IF(AV) 35 A IFSM 400 A I2 t 660 A2sec VF 1.1 V Peak Forward Surge Current Single Sine Wave Superimposed on Rated Load Rating for fusing (non-repetitive, 1ms < t < 8.3 ms) Maximum Instantaneous Forward at IF = 17.5 A Voltage Drop Per Diode Maximum DC Reverse Current at Ta = 25 C IR 5 A Rated DC Blocking Voltage Per Diode Ta = 125 C IR(H) 500 A CJ 300 pF RJC 1.4 C/W TJ, TSTG - 55 to + 150 C Typical Junction Capacitance Per Diode (at 4 V, 1MHz) Typical Thermal Resistance form Junction to Case (1) Operating Junction and Storage Temperature Range Note : (1) With heatsink Page 1 of 2 Rev. 00 : June 24, 2009 TH09/2479 TH97/2478 www.eicsemi.com IATF 0113686 SGS TH07/1033 RATING AND CHARACTERISTIC CURVES ( GBPC35005 - GBPC3510 ) FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PER DIODE AVERAGE FORWARD CURRENT, (A) 42 35 28 21 14 Bridges Mounted on 9.5 x 3.5 x 4.6" (22.9 x 8.9 x 11.7 cm) AL, Finned Plate. 7 0 0 25 50 75 100 125 150 175 PEAK FORWARD SURGE CURRENT, (A) FIG.1 - DERATING CURVE OUTPUT RECTIFIED CURRENT 480 TJ = Tjmax 0.5ms Single Sine- Wave 400 320 240 160 80 0 1 CASE TEMPERATURE, ( C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE PER DIODE Ta = 150 C 10 Ta = 125 C Ta = 100 C 1.0 Ta = 25 C 0.1 0.5 0.6 0.7 0.8 0.9 1.0 INSTANTANEOUS FORWARD VOLTAGE, (V) Page 2 of 2 INSTANTANEOUS REVERSE CURRENT, (A) INSTANTANEOUS FORWARD CURRENT, (A) 100 0.01 0.4 100 10 1.1 1000 Ta = 150 C Ta = 125 C 100 Ta = 100 C 10 1 Ta = 25 C 0.1 0 20 40 60 80 100 PERCENT OF RATED REVERSE VOLTAGE, (%) Rev. 00 : June 24, 2009