SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOSTM Power Transistor Feature VDS @ Tjmax 650 V RDS(on) 0.28 ID 15 A * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 * Extreme dv/dt rated * Ultra low effective capacitances 1 * Improved transconductance 2 3 P-TO220-3-31 * PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) Type Package Ordering Code Marking SPP15N60C3 PG-TO220 Q67040-S4600 15N60C3 SPI15N60C3 PG-TO262 Q67040-S4601 15N60C3 SPA15N60C3 PG-TO220FP SP000216325 15N60C3 Maximum Ratings Parameter Symbol Value SPP_I Continuous drain current Unit SPA ID A TC = 25 C 15 151) TC = 100 C 9.4 9.41) 45 45 Pulsed drain current, tp limited by Tjmax ID puls A Avalanche energy, single pulse EAS 460 460 EAR 0.8 0.8 Avalanche current, repetitive tAR limited by Tjmax IAR 15 15 A Gate source voltage static VGS 20 20 V Gate source voltage AC (f >1Hz) VGS 30 30 Power dissipation, TC = 25C Ptot 156 34 Operating and storage temperature Tj , Tstg Reverse diode dv/dt 6) dv/dt mJ ID=7.5A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=15A, VDD=50V Rev. 3.2 page 1 http://store.iiic.cc/ -55...+150 15 W C V/ns 2009-12-22 SPP15N60C3, SPI15N60C3 SPA15N60C3 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 50 V/ns Values Unit VDS = 480 V, ID = 15 A, Tj = 125 C Thermal Characteristics Symbol Parameter min. typ. max. Thermal resistance, junction - case RthJC - - 0.8 Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.7 Thermal resistance, junction - ambient, leaded RthJA - - 62 Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80 Soldering temperature, wavesoldering Tsold - - 260 K/W C 1.6 mm (0.063 in.) from case for 10s 3) Electrical Characteristics, at Tj=25C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=15A Values Unit min. typ. max. 600 - - - 700 - 2.1 3 3.9 V breakdown voltage Gate threshold voltage VGS(th) ID=675A, VGS =VDS Zero gate voltage drain current I DSS VDS=600V, V GS=0V, Gate-source leakage current I GSS Drain-source on-state resistance RDS(on) Gate input resistance Rev. 3.2 RG A Tj=25C - 0.1 1 Tj=150C - - 100 VGS=30V, V DS=0V - - 100 VGS=10V, ID=9.4A Tj=25C - 0.25 0.28 Tj=150C - 0.68 - f=1MHz, open drain - 1.23 - page 2 http://store.iiic.cc/ nA 2009-12-22 SPP15N60C3, SPI15N60C3 SPA15N60C3 Electrical Characteristics Parameter Transconductance Symbol gfs Conditions VDS2*ID*R DS(on)max, Values Unit min. typ. max. - 11.9 - S pF ID=9.4A Input capacitance Ciss VGS=0V, VDS=25V, - 1660 - Output capacitance Coss f=1MHz - 540 - Reverse transfer capacitance Crss - 40 - - 80 - - 127 - Effective output capacitance,4) Co(er) VGS=0V, energy related VDS=0V to 480V Effective output capacitance,5) Co(tr) time related Turn-on delay time td(on) VDD=480V, VGS=0/10V, - 10 - Rise time tr ID=15A, - 5 - Turn-off delay time td(off) RG =4.3 - 50 80 Fall time tf - 5 10 - 7 - - 29 - - 63 - - 5 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD=480V, ID=15A VDD=480V, ID=15A, nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=480V, ID=15A V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AR AV 3Soldering temperature for TO-263: 220C, reflow 4C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 5C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V DSS. 6I <=I , di/dt<=400A/us, V SD D DClink=400V, Vpeak<VBR, DSS, Tj<Tj,max. Identical low-side and high-side switch. Rev. 3.2 page 3 http://store.iiic.cc/ 2009-12-22 SPP15N60C3, SPI15N60C3 SPA15N60C3 Electrical Characteristics Symbol Parameter Inverse diode continuous IS Conditions Values Unit min. typ. max. - - 15 - - 45 TC=25C A forward current Inverse diode direct current, I SM pulsed Inverse diode forward voltage VSD VGS =0V, IF=IS - 1 1.2 V Reverse recovery time t rr VR =480V, IF =IS , - 460 - ns Reverse recovery charge Q rr diF/dt=100A/s - 27 - C Peak reverse recovery current I rrm - 55 - A Peak rate of fall of reverse dirr /dt - 1300 - A/s Tj=25C recovery current Typical Transient Thermal Characteristics Symbol Value Unit SPP_I SPA Rth1 0.012 0.012 Rth2 0.023 Rth3 Symbol Value Unit SPP_I SPA Cth1 0.0002495 0.0002495 0.023 Cth2 0.0009406 0.0009406 0.043 0.043 Cth3 0.001298 0.001298 Rth4 0.156 0.176 Cth4 0.00362 0.00362 Rth5 0.178 0.371 Cth5 0.009046 0.008025 Rth6 0.072 2.522 Cth6 0.412 0.412 Tj K/W R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 3.2 page 4 http://store.iiic.cc/ 2009-12-22 SPP15N60C3, SPI15N60C3 SPA15N60C3 1 Power dissipation 2 Power dissipation FullPAK Ptot = f (TC) Ptot = f (TC) 170 SPP15N60C3 35 W W 140 25 Ptot Ptot 120 100 20 80 15 60 10 40 5 20 0 0 20 40 60 80 100 120 C 0 0 160 20 40 60 80 100 120 TC 3 Safe operating area 4 Safe operating area FullPAK ID = f ( VDS ) ID = f (VDS) parameter : D = 0 , TC=25C parameter: D = 0, TC = 25C 10 2 C 160 Tj 10 2 10 1 10 1 ID A ID A 10 0 10 -1 10 -2 0 10 Rev. 3.2 10 0 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 10 1 10 -1 10 2 10 V VDS 3 10 -2 0 10 page 5 http://store.iiic.cc/ tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 10 1 10 2 10 V VDS 2009-12-22 3 SPP15N60C3, SPI15N60C3 SPA15N60C3 5 Transient thermal impedance 6 Transient thermal impedance FullPAK ZthJC = f (tp) ZthJC = f (tp) parameter: D = tp/T parameter: D = tp/t 10 1 10 1 K/W K/W 10 0 ZthJC ZthJC 10 0 10 -1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 10 -3 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 10 -3 s tp 10 10 -4 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 -1 tp 7 Typ. output characteristic 8 Typ. output characteristic ID = f (VDS); Tj =25C ID = f (VDS); Tj =150C parameter: tp = 10 s, VGS parameter: tp = 10 s, VGS 30 Vgs = 20V Vgs = 7V A Vgs = 6.5V Vgs = 6V Vgs = 5.5V Vgs = 5V Vgs = 4.5V 40 Vgs = 4V A ID ID 60 20 30 15 20 10 10 5 0 0 4 8 12 16 20 V 28 VDS Rev. 3.2 1 s 10 page 6 http://store.iiic.cc/ 0 0 Vgs = 20V Vgs = 7V Vgs = 6V Vgs = 5.5V Vgs = 5V Vgs = 4.5V Vgs = 4V 4 8 12 16 20 V 28 VDS 2009-12-22 SPP15N60C3, SPI15N60C3 SPA15N60C3 9 Typ. drain-source on resistance 10 Drain-source on-state resistance RDS(on)=f(ID) RDS(on) = f (Tj) parameter: Tj=150C, VGS parameter : ID = 9.4 A, VGS = 10 V 1.8 1.4 SPP15N60C3 RDS(on) RDS(on) 1.6 Vgs = 4V Vgs = 4.5V Vgs = 5V Vgs = 5.5V Vgs = 6V Vgs = 7V Vgs = 20V 1.2 1 1.2 0.8 1 0.6 0.8 0.4 typ 0.6 0.4 0 98% 0.2 5 10 15 20 0 -60 30 A -20 20 60 C 100 ID 180 Tj 11 Typ. transfer characteristics 12 Typ. gate charge ID = f ( VGS ); VDS 2 x ID x RDS(on)max VGS = f (Q Gate) parameter: ID = 15 A pulsed parameter: tp = 10 s 60 16 SPP15N60C3 V A 25C 40 VGS ID 12 150C 30 0,2 VDS max 10 0,8 VDS max 8 6 20 4 10 2 0 0 2 4 6 V 10 VGS Rev. 3.2 page 7 http://store.iiic.cc/ 0 0 10 20 30 40 50 60 70 80 nC 100 QGate 2009-12-22 SPP15N60C3, SPI15N60C3 SPA15N60C3 13 Forward characteristics of body diode 14 Avalanche SOA IF = f (VSD) IAR = f (tAR) parameter: Tj , tp = 10 s par.: Tj 150 C 10 2 SPP15N60C3 15 A A IF IAR 10 1 9 Tj(START)=25C 6 Tj(START)=125C 0 10 Tj = 25 C typ Tj = 150 C typ 3 Tj = 25 C (98%) Tj = 150 C (98%) 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 0 -3 10 3 10 -2 10 -1 10 0 10 1 10 2 s 10 tAR VSD 15 Avalanche energy 16 Drain-source breakdown voltage EAS = f (Tj) V(BR)DSS = f (Tj) 4 par.: ID = 7.5 A, VDD = 50 V 0.5 720 SPP15N60C3 V V(BR)DSS E AS mJ 0.3 680 660 640 620 0.2 600 580 0.1 560 0 20 Rev. 3.2 40 60 80 100 120 160 C Tj 540 -60 page 8 http://store.iiic.cc/ -20 20 60 100 C 180 Tj 2009-12-22 SPP15N60C3, SPI15N60C3 SPA15N60C3 18 Typ. capacitances PAR = f (f ) C = f (VDS) parameter: EAR =0.8mJ parameter: VGS =0V, f=1 MHz 900 10 4 W pF 700 10 3 Ciss 600 C PAR 17 Avalanche power losses Coss 500 10 2 400 300 10 1 200 Crss 100 0 4 10 10 5 10 Hz 6 10 0 0 100 200 300 400 V 600 VDS f 19 Typ. Coss stored energy Eoss=f(VDS) 15 E oss J 9 6 3 0 0 100 200 300 400 V 600 VDS Rev. 3.2 page 9 http://store.iiic.cc/ 2009-12-22 SPP15N60C3, SPI15N60C3 SPA15N60C3 Definition of diodes switching characteristics Rev. 3.2 page 10 http://store.iiic.cc/ 2009-12-22 SPP15N60C3, SPI15N60C3 SPA15N60C3 PG-TO220-3-1, PG-TO220-3-21 : Outline Rev. 3.2 page 11 http://store.iiic.cc/ 2009-12-22 SPP16N50C3 SPI16N50C3, SPA16N50C3 PG-TO220-3 (Fully isolated) 24 Dimensions in mm/ inches Rev 3.2 page 12 http://store.iiic.cc/ 2009-12-22 SPP15N60C3, SPI15N60C3 SPA15N60C3 PG-TO262-3-1/PG-TO262-3-21 (I-PAK) Rev. 3.2 page 13 http://store.iiic.cc/ 2009-12-22 SPP15N60C3, SPI15N60C3 SPA15N60C3 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 3.2 page 14 http://store.iiic.cc/ 2009-12-22