SO T2 3 NX3008PBK 30 V, 230 mA P-channel Trench MOSFET Rev. 1 -- 1 August 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low threshold voltage AEC-Q101 qualified Trench MOSFET technology 1.3 Applications Relay driver High-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 C - - -30 V VGS gate-source voltage -8 - 8 V - - -230 mA - 2.8 4.1 drain current ID VGS = -4.5 V; Tamb = 25 C [1] Static characteristics RDSon [1] drain-source on-state resistance VGS = -4.5 V; ID = -200 mA; Tj = 25 C Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. NX3008PBK NXP Semiconductors 30 V, 230 mA P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 1 2 G SOT23 (TO-236AB) S 017aaa259 3. Ordering information Table 3. Ordering information Type number NX3008PBK Package Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] NX3008PBK KT% [1] % = placeholder for manufacturing site code. NX3008PBK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 1 August 2011 (c) NXP B.V. 2011. All rights reserved. 2 of 16 NX3008PBK NXP Semiconductors 30 V, 230 mA P-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 C - -30 V VGS gate-source voltage drain current ID total power dissipation Ptot 8 V VGS = -4.5 V; Tamb = 25 C - -230 mA VGS = -4.5 V; Tamb = 100 C [1] - -145 mA Tamb = 25 C; single pulse; tp 10 s peak drain current IDM -8 [1] Tamb = 25 C - -1 A [2] - 350 mW [1] - 420 mW - 1140 mW Tsp = 25 C Tj junction temperature -55 150 C Tamb ambient temperature -55 150 C Tstg storage temperature -65 150 C Source-drain diode source current IS Tamb = 25 C [1] - -230 mA HBM [3] - 2000 V ESD maximum rating VESD electrostatic discharge voltage [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Measured between all pins. NX3008PBK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 1 August 2011 (c) NXP B.V. 2011. All rights reserved. 3 of 16 NX3008PBK NXP Semiconductors 30 V, 230 mA P-channel Trench MOSFET 001aao121 120 Pder (%) Ider (%) 80 80 40 40 0 -75 Fig 1. 001aao122 120 -25 25 75 125 Tj (C) 0 -75 175 Normalized total power dissipation as a function of junction temperature Fig 2. -25 25 75 125 Tj (C) 175 Normalized continuous drain current as a function of junction temperature 001aao255 -10 lD (A) -1 (1) -10-1 (2) (3) (4) -10-2 -10-1 (5) -1 -10 VDS (V) -102 IDM is a single pulse (1) tp = 1 ms (2) tp = 10 ms (3) tp = 100 ms (4) DC; Tsp = 25 C (5) DC; Tamb = 25 C; 1 cm2 drain mounting pad Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage NX3008PBK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 1 August 2011 (c) NXP B.V. 2011. All rights reserved. 4 of 16 NX3008PBK NXP Semiconductors 30 V, 230 mA P-channel Trench MOSFET 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient Rth(j-a) in free air Min Typ Max Unit [1] - 310 370 K/W [2] - 260 300 K/W - - 115 K/W thermal resistance from junction to solder point Rth(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. 017aaa015 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.25 0.1 0.2 0.05 0.02 0.01 10 0 1 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa016 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.33 0.25 10 0.2 0.1 0.05 0 0.02 0.01 1 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, mounting pad for drain 1 cm2 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values NX3008PBK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 1 August 2011 (c) NXP B.V. 2011. All rights reserved. 5 of 16 NX3008PBK NXP Semiconductors 30 V, 230 mA P-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 A; VGS = 0 V; Tj = 25 C -30 - - V VGSth gate-source threshold voltage ID = -250 A; VDS = VGS; Tj = 25 C -0.6 -0.9 -1.1 V IDSS drain leakage current VDS = -30 V; VGS = 0 V; Tj = 150 C - - -10 A VDS = -30 V; VGS = 0 V; Tj = 25 C - - -1 A IGSS gate leakage current VGS = 8 V; VDS = 0 V; Tj = 25 C - -0.2 -1 A VGS = -8 V; VDS = 0 V; Tj = 25 C - -0.2 -1 A VGS = 4.5 V; VDS = 0 V; Tj = 25 C - -10 - nA RDSon gfs drain-source on-state resistance forward transconductance VGS = -4.5 V; VDS = 0 V; Tj = 25 C - -10 - nA VGS = 2.5 V; VDS = 0 V; Tj = 25 C - -1 - nA VGS = -2.5 V; VDS = 0 V; Tj = 25 C - -1 - nA VGS = -4.5 V; ID = -200 mA; Tj = 25 C - 2.8 4.1 VGS = -4.5 V; ID = -200 mA; Tj = 150 C - 5.3 7.8 VGS = -2.5 V; ID = -10 mA; Tj = 25 C - 5.3 6.5 VDS = -10 V; ID = -200 mA; Tj = 25 C - 160 - mS VDS = -15 V; ID = -200 mA; VGS = -4.5 V; Tj = 25 C - 0.55 0.72 nC - 0.23 - nC - 0.09 - nC Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) tf VDS = -15 V; f = 1 MHz; VGS = 0 V; Tj = 25 C VDS = -20 V; RL = 250 ; VGS = -4.5 V; RG(ext) = 6 ; Tj = 25 C - 31 46 pF - 6.5 - pF - 2.3 - pF - 19 38 ns - 30 - ns turn-off delay time - 65 130 ns fall time - 38 - ns -0.47 -0.88 -1.2 V Source-drain diode VSD source-drain voltage NX3008PBK Product data sheet IS = -200 mA; VGS = 0 V; Tj = 25 C All information provided in this document is subject to legal disclaimers. Rev. 1 -- 1 August 2011 (c) NXP B.V. 2011. All rights reserved. 6 of 16 NX3008PBK NXP Semiconductors 30 V, 230 mA P-channel Trench MOSFET 001aao256 -0.25 -4.5 V ID (A) 001aao257 -10-3 -3 V -0.20 ID (A) -2.5 V (1) (2) (3) -10-4 -0.15 -0.10 -2 V -10-5 -0.05 VGS = -1.5 V 0.00 0 -1 -2 -3 VDS (V) -4 -10-6 0.0 Tj = 25 C -0.5 -1.0 VGS (V) -1.5 Tj = 25 C; VDS = -5 V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values 001aao258 14 RDS (on) () 12 (1) (2) (3) Fig 7. Sub-threshold drain current as a function of gate-source voltage 001aao259 14 RDS (on) () 12 (4) 10 10 8 8 6 6 (1) (5) 4 4 (6) (2) 2 0 2 0 -0.05 -0.10 -0.15 0 -0.20 -0.25 ID (A) 0 -1 Tj = 25 C ID = -200 mA (1) VGS = -1.75 V (1) Tj = 150 C (2) VGS = -2.0 V (2) Tj = 25 C -2 -3 -4 VGS (A) -5 (3) VGS = -2.25 V (4) VGS = -2.5 V (5) VGS = -3.0 V (6) VGS = -4.5 V Fig 8. Drain-source on-state resistance as a function of drain current; typical values NX3008PBK Product data sheet Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 -- 1 August 2011 (c) NXP B.V. 2011. All rights reserved. 7 of 16 NX3008PBK NXP Semiconductors 30 V, 230 mA P-channel Trench MOSFET 001aao260 -0.25 ID (A) 001aao261 2.0 a -0.20 1.5 (1) (2) -0.15 1.0 -0.10 0.5 -0.05 0.00 0 -1 -2 VGS (V) -3 0.0 -60 0 60 120 Tj (C) 180 VDS > ID x RDSon (1) Tj = 25 C (2) Tj = 150 C Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 001aao262 -1.5 VGS(th) (V) Fig 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values 001aao263 102 C (pF) (1) (1) -1.0 (2) 10 (2) (3) -0.5 (3) 0.0 -60 0 60 120 Tj (C) 180 1 -10-1 -1 ID = -0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V (1) maximum values (1)Ciss (2) typical values (2)Coss (3) minimum values (3)Crss Fig 12. Gate-source threshold voltage as a function of junction temperature NX3008PBK Product data sheet -10 VDS (V) -102 Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 -- 1 August 2011 (c) NXP B.V. 2011. All rights reserved. 8 of 16 NX3008PBK NXP Semiconductors 30 V, 230 mA P-channel Trench MOSFET 001aao264 -5 VGS (V) VDS -4 ID -3 VGS(pl) -2 VGS(th) VGS -1 QGS1 QGS2 QGS 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 QG (nC) QGD QG(tot) 003aaa508 ID = -200 mA; VDS = -15 V; Tamb = 25 C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions 001aao265 -0.25 IS (A) -0.20 -0.15 (1) (2) -0.10 -0.05 0.00 0.0 -0.4 -0.8 VSD (V) -1.2 VGS = 0 V (1) Tj = 150 C (2) Tj = 25 C Fig 16. Source current as a function of source-drain voltage; typical values NX3008PBK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 1 August 2011 (c) NXP B.V. 2011. All rights reserved. 9 of 16 NX3008PBK NXP Semiconductors 30 V, 230 mA P-channel Trench MOSFET 8. Test information P t2 duty cycle = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. NX3008PBK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 1 August 2011 (c) NXP B.V. 2011. All rights reserved. 10 of 16 NX3008PBK NXP Semiconductors 30 V, 230 mA P-channel Trench MOSFET 9. Package outline Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 TO-236AB Fig 18. Package outline SOT23 (TO-236AB) NX3008PBK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 1 August 2011 (c) NXP B.V. 2011. All rights reserved. 11 of 16 NX3008PBK NXP Semiconductors 30 V, 230 mA P-channel Trench MOSFET 10. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste occupied area 0.6 (3x) 0.7 (3x) Dimensions in mm 0.5 (3x) 0.6 (3x) 1 sot023_fr Fig 19. Reflow soldering footprint for SOT23 (TO-236AB) 2.2 1.2 (2x) 1.4 (2x) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 20. Wave soldering footprint for SOT23 (TO-236AB) NX3008PBK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 1 August 2011 (c) NXP B.V. 2011. All rights reserved. 12 of 16 NX3008PBK NXP Semiconductors 30 V, 230 mA P-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes NX3008PBK v.1 20110801 Product data sheet - - NX3008PBK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 1 August 2011 (c) NXP B.V. 2011. All rights reserved. 13 of 16 NX3008PBK NXP Semiconductors 30 V, 230 mA P-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. 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Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 -- 1 August 2011 (c) NXP B.V. 2011. All rights reserved. 14 of 16 NX3008PBK NXP Semiconductors 30 V, 230 mA P-channel Trench MOSFET Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. 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Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Test information . . . . . . . . . . . . . . . . . . . . . . . . .10 Quality information . . . . . . . . . . . . . . . . . . . . . .10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .13 Legal information. . . . . . . . . . . . . . . . . . . . . . . .14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Contact information. . . . . . . . . . . . . . . . . . . . . .15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 1 August 2011 Document identifier: NX3008PBK