BYQ28X-200 Dual ultrafast rugged rectifier diode Rev. 03 -- 18 July 2018 Product data sheet 1. Product profile 1.1 General description Dual ultrafast epitaxial rectifier diodes in a SOT186A (TO-220F) isolated plastic package. 1.2 Features and benefits Fast switching Low on-state losses Guaranteed ESD capability Soft recovery minimizes power-consuming oscillations High thermal cycling performance 1.3 Applications Output rectifiers in high-frequency switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit - - 200 V VRRM repetitive peak reverse voltage IO(AV) average output current SQW; = 0.5; Th 92 C; both diodes conducting; see Figure 1; see Figure 2 - - 10 A IFRM repetitive peak forward current SQW; = 0.5; tp = 25 s; Th 92 C; per diode - - 10 A IF = 1 A; VR = 30 V; dIF/dt = 100 A/s; Tj = 25 C; ramp recovery; see Figure 5 - 15 25 ns IF = 5 A; Tj = 150 C; see Figure 4 - 0.8 0.895 V HBM; C = 250 pF; R = 1.5 k; all pins - - 8 Dynamic characteristics trr reverse recovery time Static characteristics VF forward voltage Electrostatic discharge VESD electrostatic discharge voltage kV BYQ28X-200 WeEn Semiconductors Dual ultrafast rugged rectifier diode 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 A1 anode 1 2 K cathode 3 A2 anode 2 mb n.c. mounting base; isolated Graphic symbol mb A1 A2 K sym125 1 2 3 SOT186A (TO-220F) 3. Ordering information Table 3. Ordering information Type number Package Name Description BYQ28X-200 TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 "full pack" BYQ28X-200_3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 -- 18 July 2018 Version SOT186A (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved 2 of 10 BYQ28X-200 WeEn Semiconductors Dual ultrafast rugged rectifier diode 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VRRM Conditions Min Max Unit repetitive peak reverse voltage - 200 V VRWM crest working reverse voltage - 200 V VR reverse voltage DC - 200 V IO(AV) average output current SQW; = 0.5; Th 92 C; both diodes conducting; see Figure 1; see Figure 2 - 10 A IFRM repetitive peak forward current SQW; = 0.5; tp = 25 s; Th 92 C; per diode - 10 A IFSM non-repetitive peak forward current tp = 10 ms; SIN; Tj(init) = 25 C; per diode - 50 A tp = 8.3 ms; SIN; Tj(init) = 25 C; per diode - 55 A IRRM repetitive peak reverse current tp = 2 s; = 0.001 - 0.2 A IRSM non-repetitive peak reverse current tp = 100 s - 0.2 A Tstg storage temperature -40 150 C Tj junction temperature - 150 C - 8 kV Electrostatic discharge electrostatic discharge voltage VESD HBM; C = 250 pF; R = 1.5 k; all pins 001aag976 8 Ptot (W) =1 001aag977 6 Ptot (W) a = 1.57 6 1.9 0.5 4 2.2 2.8 0.2 4 4.0 0.1 2 2 0 0 0 2 4 6 8 0 IF(AV) (A) Fig 1. Forward power dissipation as a function of average forward current; square waveform; maximum values BYQ28X-200_3 Product data sheet 2 4 6 IF(AV) (A) Fig 2. Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values All information provided in this document is subject to legal disclaimers. Rev. 03 -- 18 July 2018 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved 3 of 10 BYQ28X-200 WeEn Semiconductors Dual ultrafast rugged rectifier diode 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Rth(j-h) Rth(j-a) Conditions Min Typ Max Unit thermal resistance from with heatsink compound; see Figure 3 junction to heatsink - - 5.7 K/W thermal resistance from junction to ambient free air - 55 - K/W 003aac898 10 Zth(j-h) (K/W) 1 10-1 = P 10-2 tp T t tp T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 1 10 tp (s) Fig 3. Transient thermal impedance from junction to heatsink as a function of pulse width 6. Isolation characteristics Table 6. Isolation characteristics Symbol Parameter Conditions Min Typ Max Unit Visol(RMS) RMS isolation voltage 50 Hz < f < 60 Hz; sinusoidal waveform; relative humidity < 65 %; clean and dust free; from all terminals to external heatsink - - 2500 V Cisol isolation capacitance from cathode to external heatsink; f = 1 MHz - 10 - pF BYQ28X-200_3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 -- 18 July 2018 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved 4 of 10 BYQ28X-200 WeEn Semiconductors Dual ultrafast rugged rectifier diode 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit IF = 10 A; Tj = 25 C - IF = 5 A; Tj = 150 C; see Figure 4 - 1.1 1.25 V 0.8 0.895 V IF = 5 A; Tj = 25 C - 0.95 1.1 V VR = 200 V; Tj = 25 C - 2 10 A VR = 200 V; Tj = 100 C - 0.1 0.2 mA Static characteristics forward voltage VF reverse current IR Dynamic characteristics Qr recovered charge IF = 2 A; VR = 30 V; dIF/dt = 20 A/s; Tj = 25 C - 4 9 C trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/s; ramp recovery; Tj = 25 C; see Figure 5 - 15 25 ns IF = 0.5 A; IR = 1 A; step recovery; measured at IR = 0.25 A; Tj = 25 C; see Figure 6 - - 20 ns IRM peak reverse recovery current IF = 5 A; VR 30 V; dIF/dt = 50 A/s; Tj = 25 C; see Figure 5 - 0.5 0.7 A VFRM peak forward recovery voltage IF = 1 A; dIF/dt = 10 A/s; Tj = 25 C; see Figure 7 - 1 - V 001aag978 15 IF dlF dt IF (A) trr 10 (1) (2) (3) time 25 % 5 Qr IR 100 % IRM 003aac562 0 0 0.5 1.0 1.5 VF (V) Fig 4. Fig 5. Reverse recovery definitions; ramp recovery Forward current as a function of forward voltage BYQ28X-200_3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 -- 18 July 2018 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved 5 of 10 BYQ28X-200 WeEn Semiconductors Dual ultrafast rugged rectifier diode IF IF IF trr time time 0.25 x IR VF Qr VFRM IR IR Fig 6. VF 003aac563 time Reverse recovery definitions; step recovery 001aab912 Fig 7. BYQ28X-200_3 Product data sheet Forward recovery definitions All information provided in this document is subject to legal disclaimers. Rev. 03 -- 18 July 2018 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved 6 of 10 BYQ28X-200 WeEn Semiconductors Dual ultrafast rugged rectifier diode 8. Package outline Fig. 8. Package outline TO-220F (SOT186A) BYQ28X-200_3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 -- 18 July 2018 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved 7 of 10 BYQ28X-200 WeEn Semiconductors Dual ultrafast rugged rectifier diode 9. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes BYQ28X-200_3 20180718 Product data sheet - BYQ28X-200_2 Modifications: BYQ28X-200_2 Modifications: * * BYQ28X-200_3 Product data sheet Update POD to combine different assembly plant. 20090205 * * * BYQ28X_SERIES_1 Change NXP logo to WeEn logo. Product data sheet - BYQ28X_SERIES_1 The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Type number BYQ28X-200 separated from data sheet BYQ28X_SERIES_1. 19960801 Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 03 -- 18 July 2018 - (c) WeEn Semiconductors Co., Ltd. 2018. 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WeEn Semiconductors and its suppliers accept no liability for inclusion and/or use of WeEn Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. 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Notwithstanding any damages that customer might incur for any reason whatsoever, WeEn Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of WeEn Semiconductors. BYQ28X-200_3 Product data sheet Customers are responsible for the design and operation of their applications and products using WeEn Semiconductors products, and WeEn Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer's sole responsibility to determine whether the WeEn Semiconductors product is suitable and fit for the customer's applications and products planned, as well as for the planned application and use of customer's third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. 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All information provided in this document is subject to legal disclaimers. 18 July 2018 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved 9 / 10 BYQ28X-200 WeEn Semiconductors Dual ultrafast power diode Translations -- A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BYQ28X-200_3 Product data sheet All information provided in this document is subject to legal disclaimers. 18 July 2018 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved 10 / 10