BYQ28X-200,127 - WEEN SEMICONDUCTOR(HONG KONG)CO.,LIMITED

BYQ28X-200

Dual ultrafast rugged rectifier diode

Rev. 03 — 18 July 2018 Product data sheet

1. Product profile

1.1 General description

Dual ultrafast epitaxial rectifier diodes in a SOT186A (TO-220F) isolated plastic package.

1.2 Features and benefits

Fast switching

Guaranteed ESD capability

High thermal cyclin g performance

Low on-state losses

Soft recovery minimizes

power-consuming oscillations

1.3 Applications

Output rectifiers in high-frequency

switched-mode power supplies

1.4 Quick reference data

Table 1. Quick reference

Symbol Parameter Conditions Min Typ Max Unit

VRRM repetitive peak

reverse voltage - - 200 V

IO(AV) average output

current SQW; δ=0.5; T

h≤92 °C;

both diodes conducting; see

Figure 1; see Figure 2

--10A

IFRM repetitive peak

forward current SQW; δ=0.5; t

p=25µs;

Th≤92 °C; per diode --10A

Dynamic characteristics

trr reverse recovery

time IF=1A; V

R=30V;

dIF/dt = 100 A/µs;

Tj= 25 °C; ramp recovery;

see Figure 5

- 1525ns

Static characteristics

VFforward voltage IF=5A; T

j=150°C; see

Figure 4 - 0.8 0.895 V

Electrostatic discharge

VESD electrostatic

discharge voltage HBM; C = 250 pF;

R=1.5kΩ; all pins --8kV

Product data sheet Rev. 03 — 18 July 2018 2 of 10

WeEn Semiconductors BYQ28X-200

Dual ultrafast rugged rectifier diode

2. Pinning information

3. Ordering information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 A1 anode 1

S O T 1 8 6 A

(TO-220F)

2 K cathode

3 A2 anode 2

mb n.c. mounting base; isolated

321

sym125

A2A1

Table 3. Ordering information

Type number Package

Name Description Version

BYQ28X-200 TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting

hole; 3-lead TO-220 "full pack" SOT186A

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BYQ28X-200_3

Product data sheet 3 of 10

WeEn Semiconductors BYQ28X-200

Dual ultrafast rugged rectifier diode

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VRRM repetitive peak reverse

voltage -200V

VRWM crest working reverse

voltage -200V

VRreverse voltage DC - 200 V

IO(AV) average output current SQW; δ= 0.5; Th≤92 °C; both di odes conducting;

see Figure 1; see Figure 2 -10A

IFRM repetitive peak forward

current SQW; δ= 0.5; tp= 25 µs; Th≤92 °C; per diode - 10 A

IFSM non-repetitive peak

forward current tp= 10 ms; SIN; Tj(init) = 25 °C; per diode - 50 A

tp= 8.3 ms; SIN; Tj(init) = 25 °C; per diode - 55 A

IRRM repetitive peak reverse

current tp=2µs; δ= 0.001 - 0.2 A

IRSM non-repetitive peak

reverse current tp= 100 µs - 0.2 A

Tstg storage temperature -40 150 °C

Tjjunction temperature - 150 °C

Electrostatic discharge

VESD electrostatic discharge

voltage HBM; C = 250 pF; R = 1.5 kΩ; all pins - 8 kV

Fig 1. Forward power dissipation as a function of

average forward current; square waveform;

maximum values

Fig 2. Forward power dissipation as a function of

average forward current; sinusoidal waveform;

maximum values

IF(AV) (A)

08624

001aag976

Ptot

(W)

δ = 1

0.2

0.1

0.5

001aag977

IF(AV) (A)

0642

Ptot

(W)

a = 1.57

2.2

2.8

4.0

1.9

Rev. 03 — 18 July 2018

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BYQ28X-200_3

Product data sheet 4 of 10

WeEn Semiconductors BYQ28X-200

Dual ultrafast rugged rectifier diode

5. Thermal characteristics

6. Isolation characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-h) thermal resistance from

junction to heatsink with heatsink compound; see Figure 3 --5.7K/W

Rth(j-a) thermal resistance from

junction to ambient f ree

air

-55-K/W

Fig 3. Transient thermal impedance from junction to heatsink as a function of pulse width

003aac898

10−1

10−2

Zth(j-h)

(K/W)

10−3

tp (s)

10−61 1010−1

10−2

10−510−3

10−4

δ =

Table 6. Isolation characteristics

Symbol Parameter Conditions Min Typ Max Unit

Visol(RMS) RMS isolation voltage 50 Hz < f < 60 Hz; sinusoidal waveform;

relative humidity < 65 %; clean and dust

free; from all terminals to external heatsink

--2500V

Cisol isolation capacitance from cathode to external heatsink;

f=1MHz -10-pF

Rev. 03 — 18 July 2018

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BYQ28X-200_3

Product data sheet 5 of 10

WeEn Semiconductors BYQ28X-200

Dual ultrafast rugged rectifier diode

7. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

VFforward voltage IF=10A; T

j=25°C - 1.1 1.25 V

IF=5A; T

j= 150 °C; see Figure 4 - 0.8 0.895 V

IF=5A; T

j= 25 °C - 0.95 1.1 V

IRreverse current VR=200V; T

j=25°C - 2 10 µA

VR=200V; T

j= 100 °C - 0.1 0.2 mA

Dynamic characteristics

Qrrecovered charge IF=2A; V

R=30V; dI

F/dt = 20 A/µs;

Tj=25°C -49µC

trr reverse recovery time IF=1A; V

R=30V; dI

F/dt = 100 A/µs;

ramp recovery; Tj= 25 °C; see Figure 5 -1525ns

IF= 0.5 A; IR= 1 A; step recovery;

measured at IR = 0.25 A; Tj=25°C; see

Figure 6

--20ns

IRM peak reverse recovery

current IF=5A; V

R≥30 V; dIF/dt = 50 A/µs;

Tj=25°C; see Figure 5 -0.50.7A

VFRM peak forward recovery

voltage IF=1A; dI

F/dt = 10 A/µs; Tj= 25 °C; see

Figure 7 -1-V

Fig 4. Forward current as a function of forward

voltage

Fig 5. Reverse recovery definitions; ramp recovery

001aag978

VF (V)

0 1.51.00.5

(A)

(3)(2)(1)

003aac562

trr

time

100 %

25 %

dlF

IRIRM

Rev. 03 — 18 July 2018

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BYQ28X-200_3

Product data sheet 6 of 10

WeEn Semiconductors BYQ28X-200

Dual ultrafast rugged rectifier diode

Fig 6. Reverse recovery definitions; step recovery

Fig 7. Forward recovery definitions

003aac56

trr

time

0.25 x IR

001aab912

time

FRM

Rev. 03 — 18 July 2018

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BYQ28X-200_3

Product data sheet Rev. 03 — 18 July 2018 7 of 10

WeEn Semiconductors BYQ28X-200

Dual ultrafast rugged rectifier diode

8. Package outline

Fig. 8. Package outline TO-220F (SOT186A)

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BYQ28X-200_3

Product data sheet Rev. 03 — 18 July 2018 8 of 10

WeEn Semiconductors BYQ28X-200

Dual ultrafast rugged rectifier diode

9. Revision history

Table 8. Revision history

BYQ28X-200_2 20090205 Product data sheet - BYQ28X_SERIES_1

Modifications: •The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

•Legal texts have been adapted to the new company name where appropriate .

•Type number BYQ28X-200 separated from data sheet BYQ28X_SERIES_1.

BYQ28X_SERIES_1 19960801 Product data sheet - -

Document ID Release date Data sheet status Change notice Supersedes

Modifications: •Change NXP logo to WeEn logo.

•Update POD to combine different assembly plant.

BYQ28X-200_320180718 Product data sheet -BYQ28X-200_2

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WeEn Semiconductors BYQ28X-200

Dual ultrafast power diode

Product data sheet 18 July 2018 9 / 10

10. Legal information

Data sheet status

Document

status [1][2]

Product

status [3]

Definition

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Product

[short] data

sheet

Production This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

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Limiting values — Stress above one or more limiting values (as defined in

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WeEn Semiconductors BYQ28X-200

Dual ultrafast power diode

Product data sheet 18 July 2018 10 / 10

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