2N4923 - ON Semiconductor

January, 2017 − Rev. 15

1Publication Order Number:

2N4921/D

2N4921G, 2N4922G,

2N4923G

Medium-Power Plastic

NPN Silicon Transistors

These high−performance plastic devices are designed for driver

circuits, switching, and amplifier applications.

Features

•Low Saturation Voltage

•Excellent Power Dissipation

•Excellent Safe Operating Area

•Complement to PNP 2N4920G

•These Devices are Pb−Free and are RoHS Compliant**

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage

2N4921G

2N4922G

2N4923G

VCEO 40

Vdc

Collector−Emitter Voltage

2N4921G

2N4922G

2N4923G

VCB 40

Vdc

Emitter Base Voltage VEB 5.0 Vdc

Collector Current − Continuous (Note 1) IC1.0 Adc

Collector Current − Peak (Note 1) ICM 3.0 Adc

Base Current − Continuous IB1.0 Adc

Total Power Dissipation

@ TC = 25_C

Derate above 25_C

PD30

0.24

mW/_C

Operating and Storage Junction

Temperature Range

TJ, Tstg –65 to + 150 _C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. The 1.0 A maximum IC value is based upon JEDEC current gain requirements.

The 3.0 A maximum value is based upon actual current handling capability of

the device (see Figures 5 and 6).

THERMAL CHARACTERISTICS (Note 2)

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 4.16 _C/W

2. Recommend use of thermal compound for lowest thermal resistance.

*Indicates JEDEC Registered Data.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

1.0 AMPERE

GENERAL PURPOSE

POWER TRANSISTORS

40−80 VOLTS, 30 WATTS

www.onsemi.com

MARKING DIAGRAM

Y = Year

WW = Work Week

2N492x = Device Code

x = 1, 2, or 3

G=Pb−Free Package

Device Package Shipping

ORDERING INFORMATION

2N4921G TO−225

(Pb−Free)

500 Units / Box

2N4922G TO−225

(Pb−Free)

500 Units / Box

2N4923G TO−225

(Pb−Free)

500 Units / Box

BASE

EMITTER

COLLECTOR

2, 4

TO−225

CASE 77−09

STYLE 1

123

YWW

N492xG

2N4921G, 2N4922G, 2N4923G

www.onsemi.com

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 3)

(IC = 0.1 Adc, IB = 0)

2N4921G

2N4922G

2N4923G

VCEO(sus)

−

Vdc

Collector Cutoff Current

(VCE = 20 Vdc, IB = 0)

2N4921G

(VCE = 30 Vdc, IB = 0)

2N4922G

(VCE = 40 Vdc, IB = 0)

2N4923G

ICEO

−

0.5

mAdc

Collector Cutoff Current

(VCE = Rated VCEO, VEB(off) = 1.5 Vdc)

(VCE = Rated VCEO, VEB(off) = 1.5 Vdc, TC = 125_C

ICEX

−

0.1

0.5

mAdc

Collector Cutoff Current

(VCB = Rated VCB, IE = 0)

ICBO

−0.1

mAdc

Emitter Cutoff Current

(VEB = 5.0 Vdc, IC = 0)

IEBO

−1.0

mAdc

ON CHARACTERISTICS

DC Current Gain (Note 3)

(IC = 50 mAdc, VCE = 1.0 Vdc)

(IC = 500 mAdc, VCE = 1.0 Vdc)

(IC = 1.0 Adc, VCE = 1.0 Vdc)

hFE 40

−

150

−

Collector−Emitter Saturation Voltage (Note 3)

(IC = 1.0 Adc, IB = 0.1 Adc)

VCE(sat)

−0.6

Vdc

Base−Emitter Saturation Voltage (Note 3)

(IC = 1.0 Adc, IB = 0.1 Adc)

VBE(sat)

−1.3

Vdc

Base−Emitter On Voltage (Note 3)

(IC = 1.0 Adc, VCE = 1.0 Vdc)

VBE(on)

−1.3

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)

fT3.0 −

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 100 kHz)

Cob

−100

Small−Signal Current Gain

(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hfe 25 −

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: PW ≈ 300 ms, Duty Cycle ≈ 2.0%.

2N4921G, 2N4922G, 2N4923G

www.onsemi.com

025 50 75 100 125 150

Figure 1. Power Derating

TC, CASE TEMPERATURE (°C)

PD, POWER DISSIPATION (WATTS)

Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.

Figure 2. Switching Time Equivalent Circuit

5.0

Figure 3. Turn−On Time

IC, COLLECTOR CURRENT (mA)

VCC = 30 V

IC/IB = 20

t, TIME (s)μ

2.0

1.0

0.7

0.5

0.3

0.2

0.1

0.05 20 30 50 70 100 200 700 1000

VCC

SCOPE

Cjd<<Ceb

-4.0 V

t1 ≤ 15 ns

100 < t2 ≤ 500 ms

t3 ≤15 ns

DUTY CYCLE ≈ 2.0%

Vin

0.07

3.0 IC/IB = 10, UNLESS NOTED

VCC = 30 V

VCC = 60 V

VBE(off) = 2.0 V

VCC = 30 V

VBE(off) = 0

300 500

VBE(off)

APPROX 9.0 V

TURN-ON PULSE

Vin

APPROX

+11 V

Vin

TURN-OFF PULSE

APPROX

+11 V

RB and RC varied to

obtain desired

current levels

TJ = 25°C

TJ = 150°C

VCC = 60 V

2N4921G, 2N4922G, 2N4923G

www.onsemi.com

Figure 4. Thermal Response

t, TIME (ms)

1.0

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.02 0.03

r(t), TRANSIENT THERMAL

RESISTANCE (NORMALIZED)

0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 1000500

qJC(t) = r(t) qJC

qJC = 4.16°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) qJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.01

0.1

SINGLE PULSE

1.0

Figure 5. Active−Region Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

5.0

2.0

1.0

0.5

0.1 2.0 3.0 5.0 10 20 30 50 10

0.2

IC, COLLECTOR CURRENT (AMP)

TJ = 150°Cdc

5.0 ms

7.0

PULSE CURVES APPLY BELOW

RATED VCEO

SECOND BREAKDOWN

LIMITED

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25°C

7.0

3.0

0.7

0.3

1.0 ms 100 ms

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

operation i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150_C; TC

is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided

TJ(pk) ≤ 150_C. At high case temperatures, thermal

limitations will reduce the power that can be handled to

values less than the limitations imposed by second

breakdown.

tμ

s, STORAGE TIME (s)

′

5.0

Figure 6. Storage Time

IC, COLLECTOR CURRENT (mA)

2.0

1.0

0.5

0.3

0.2

0.1

0.05 20 30 50 70 500 700 1000

0.07

100

3.0

0.7

200 300

TJ = 25°C

TJ = 150°C

IC/IB = 10 IC/IB = 20

5.0

Figure 7. Fall Time

IC, COLLECTOR CURRENT (mA)

2.0

1.0

0.5

0.3

0.2

0.1

0.05 20 30 50 70 500 700 1000

0.07

100

3.0

0.7

200 300

TJ = 25°C

TJ = 150°C

IC/IB = 20

IC/IB = 10

IC/IB = 20

tμ

f, FALL TIME (s)

IB1 = IB2

ts′ = ts - 1/8 tf

VCC = 30 V

IB1 = IB2

2N4921G, 2N4922G, 2N4923G

www.onsemi.com

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

RBE, EXTERNAL BASE-EMITTER RESISTANCE (OHMS)

1000

2.0

Figure 8. Current Gain

IC, COLLECTOR CURRENT (mA)

10 3.0 5.0 10 20 30 200 300 500 2000

500

200

100

Figure 9. Collector Saturation Region

1.0

0.2

IB, BASE CURRENT (mA)

00.3 0.5 1.0 2.0 5.0 10 20 50 200

0.8

0.6

0.4

0.2

IC = 0.1 A

TJ = 25°C

0.25 A 0.5 A 1.0 A

700

300

hFE, DC CURRENT GAIN

TJ = 150°C

25°C

-55°C

VCE = 1.0 V

50 100 1000 3.0 30 100

108

Figure 10. Effects of Base−Emitter Resistance

TJ, JUNCTION TEMPERATURE (°C)

30 60 90 120 150

107

105

104

103

VCE = 30 VIC = 10 x ICES

IC = 2 x ICES

IC ≈ICES

ICES VALUES

OBTAINED FROM

FIGURE 12

106

1.5

2.0

IC, COLLECTOR CURRENT (mA)

5.0 10 20 30 50 100 200 300 2000

1.2

0.9

0.6

0.3

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VOLTAGE (VOLTS)

Figure 11. “On” Voltage

3.0 500 1000

VBE @ VCE = 2.0 V

104

-0.2

Figure 12. Collector Cut−Off Region

VBE, BASE-EMITTER VOLTAGE (VOLTS)

103

102

10-1

, COLLECTOR CURRENT (A)μIC

-0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5

VCE = 30 V

TJ = 150°C

100°C

25°C

REVERSE FORWARD

IC = ICES

+2.5

2.0

Figure 13. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

3.0 5.0 10 20 30 50 100 200 2000

-55°C to +100°C

TEMPERATURE COEFFICIENTS (mV/ C)°

+2.0

+1.5

+0.5

-0.5

-1.0

-1.5

-2.0

-2.5

qVB FOR VBE

TJ = 100°C to 150°C

*APPLIES FOR IC/IB ≤

hFE@VCE +1.0V

+1.0

300 500 1000

101

100

10-2

*qVC FOR VCE(sat)

2N4921G, 2N4922G, 2N4923G

www.onsemi.com

PACKAGE DIMENSIONS

TO−225

CASE 77−09

ISSUE AD

DIM MIN MAX

MILLIMETERS

D10.60 11.10

E7.40 7.80

A2.40 3.00

b0.60 0.90

P2.90 3.30

L1 1.27 2.54

c0.39 0.63

L14.50 16.63

b2 0.51 0.88

Q3.80 4.20

A1 1.00 1.50

e2.04 2.54

123

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. NUMBER AND SHAPE OF LUGS OPTIONAL.

FRONT VIEW SIDE VIEW

PIN 4

BACKSIDE TAB

STYLE 1:

PIN 1. EMITTER

2., 4. COLLECTOR

3. BASE

FRONT VIEW BACK VIEW

123321

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2N4921/D

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