MZ0912B50Y,114 - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of November 1994 1997 Feb 18

DISCRETE SEMICONDUCTORS

MZ0912B50Y

NPN microwave power transistor

1997 Feb 18 2

Philips Semiconductors Product speciﬁcation

NPN microwave power transistor MZ0912B50Y

FEATURES

•Interdigitated structure provides

high emitter efficiency

•Diffused emitter ballasting resistors

providing excellent current sharing

and withstanding a high VSWR

•Gold metallization realizes very

stable characteristics and excellent

lifetime

•Multicell geometry gives good

balance of dissipated power and

low thermal resistance

•Input and output matching cell

allows an easier design of circuits.

APPLICATIONS

Common base, class C, broadband,

pulse power amplifier from

960 to 1215 MHz for TACAN

application.

DESCRIPTION

NPN silicon planar epitaxial

microwave power transistor in a

SOT443A metal ceramic flange

package with base connected to

flange. It is mounted in common base

configuration, and specified in

class C.

QUICK REFERENCE DATA

Microwave performance up to Tmb =25°C in a common base class C

broadband ampliﬁer.

PINNING - SOT443A

MODE OF

OPERATION f

(GHz) VCC

(V) PL

(W) Gp

(dB) ηC

(%) Zi/ZL (Ω)

Class C;

tp=10µs; δ=1% 0.960 to 1.215 50 >50 >7 >42 see Figs 6

and 7

PIN DESCRIPTION

1 collector

2 emitter

3 base connected to ﬂange

Fig.1 Simplified outline and symbol.

handbook, halfpage

MAM314

Top view

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.

1997 Feb 18 3

Philips Semiconductors Product speciﬁcation

NPN microwave power transistor MZ0912B50Y

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Up to 0.2 mm from ceramic.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −65 V

VCEO collector-emitter voltage open base −20 V

VCES collector-emitter voltage RBE =0Ω−60 V

VEBO emitter-base voltage open collector −3V

Ccollector current (DC) tp≤10 µs; δ≤10% −3A

tot total power dissipation (peak power) Tmb =75°C; tp≤10 µs; δ≤10% −150 W

Tstg storage temperature −65 +200 °C

Tjoperating junction temperature −200 °C

Tsld soldering temperature t ≤10 s; note 1 −235 °C

Fig.2 Power derating curve.

tp=10µs; δ= 10%; Ptot max = 150 W.

handbook, halfpage

−50 200

180

120

Ptot

(W)

100 Tmb (°C)

MGL051

1997 Feb 18 4

Philips Semiconductors Product speciﬁcation

NPN microwave power transistor MZ0912B50Y

THERMAL CHARACTERISTICS

Tj= 125 °C unless otherwise speciﬁed.

Notes

1. See

“Mounting recommendations in the General part of handbook SC19a”

2. Equivalent thermal impedance under nominal pulse microwave operating conditions; tp=10µs; δ= 10%.

CHARACTERISTICS

Tmb =25°C unless otherwise speciﬁed.

APPLICATION INFORMATION

Microwave performance up to Tmb =25°C measured in the test jig as shown in Fig.3 and working in class C broadband

mode in pulse; note 1.

Notes

1. Operating conditions and performance for other pulse formats can be made available on request.

2. VCC during pulse.

List of components (see Fig.3).

SYMBOL PARAMETER CONDITIONS MAX. UNIT

Rth j-mb thermal resistance from junction to mounting base CW 4.9 K/W

Rth mb-h thermal resistance from mounting base to heatsink CW; note 1 0.2 K/W

Zth j-h thermal impedance from junction to heatsink notes 1 and 2 0.85 K/W

SYMBOL PARAMETER CONDITIONS MAX. UNIT

ICBO collector cut-off current VCB =65V; I

E= 0 20 mA

VCB =50V; I

E=0 2 mA

CES collector cut-off current VCE =60V; R

BE =0Ω20 mA

IEBO emitter cut-off current VEB = 1.5 V; IC= 0 200 µA

MODE OF OPERATION f

(GHz) VCC

(V)(2) PL

(W) Gp

(dB) ηC

(%) Zi/ZL

(Ω)

Class C;

tp=10µs; δ= 10% 0.960 to 1.215 50 >50

typ. 60 >7

typ. 8 >42

typ. 44 see Figs 6

and 7

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

L1, L2 0.65 mm diameter copper wire −total length = 12 mm;

height of loop = 9 mm −

L3 4 turns 0.65 mm diameter

copper wire; −int. dia. 3 mm; l = 5 mm −

C1 capacitor 100 pF −ATC, ref. 100A101KP50X

C2 tantalum capacitor 10 µF; 50 V −−

C3 electrolytic capacitor 470 µF; 63 V −−

C4 feedthrough bypass capacitor −− Erie, ref. 1250-003

C5, C6 variable gigatrim capacitor 0.6 to 4.5 pF −Tekelec, ref. 727.1

1997 Feb 18 5

Philips Semiconductors Product speciﬁcation

NPN microwave power transistor MZ0912B50Y

Fig.3 Broadband test circuit.

Substrate: Epsilam 10.

Thickness: 0.635 mm.

Permittivity: εr= 10.

handbook, full pagewidth

MCD634

30 mm 30 mm

mm 40

924.5 2.5 39

6.5 12

10 2

312

0.635 0.635

handbook, full pagewidth

MGL064

C3 +VCC

1997 Feb 18 6

Philips Semiconductors Product speciﬁcation

NPN microwave power transistor MZ0912B50Y

Fig.4 Load power as a function of frequency;

(In broadband test circuit as shown in

Fig.3).

VCC = 50 V; tp=10µs; δ= 10%.

handbook, halfpage

0.95 1.05 1.15 1.25

f (GHz)

(W)

MGL052

Fig.5 Collector efficiency as a function of

frequency; (In broadband test circuit as

shown in Fig.3).

handbook, halfpage

0.95 1.05 1.15 1.25

f (GHz)

ηC

(%)

MGL053

Fig.6 Optimum load impedance as a function of frequency, associated with input impedance.

VCC = 50 V; Zo=10Ω; PL=50W.

handbook, full pagewidth

MGL049

0.2

0.5

0.2

0.5

∞

00.2 0.5 1 2 5 10

+ j

− j

1.215 GHz

0.960 GHz

1997 Feb 18 7

Philips Semiconductors Product speciﬁcation

NPN microwave power transistor MZ0912B50Y

Fig.7 Input impedance as a function of frequency, associated with optimum load impedance.

VCC = 50 V; Zo=10Ω; PL=50W.

handbook, full pagewidth

MGL050

0.2

0.5

0.2

0.5

∞

00.2 0.5 1 2 5 10

+ j

− j

1.215 GHz 0.960 GHz

1997 Feb 18 8

Philips Semiconductors Product speciﬁcation

NPN microwave power transistor MZ0912B50Y

PACKAGE OUTLINE

Fig.8 SOT443A.

Dimensions in mm.

Torque on screw: Max. 0.5 Nm.

Recommended screw: M3.

handbook, full pagewidth

MBC663

10.5

max 10.5

max 23

max

16.5

3.4

3.2

3.1

4 min

0.5 X

0.5 Y

3.5

2.9

0.1

1.7 max

6.4

max

24 max 0.5 Y

seating plane

1997 Feb 18 9

Philips Semiconductors Product speciﬁcation

NPN microwave power transistor MZ0912B50Y

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data sheet status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of this speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

1997 Feb 18 10

Philips Semiconductors Product speciﬁcation

NPN microwave power transistor MZ0912B50Y

NOTES

1997 Feb 18 11

Philips Semiconductors Product speciﬁcation

NPN microwave power transistor MZ0912B50Y

NOTES

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Printed in The Netherlands 127147/00/02/pp12 Date of release: 1997 Feb 18 Document order number: 9397 750 01736