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2Oct-30-1997
BSM 10 GD 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Gate threshold voltage
VGE = VCE, IC = 0.32 mA VGE(th) 4.5 5.5 6.5 V
Collector-emitter saturation voltage
VGE = 15 V, IC = 10 A, Tj = 25 °C
VGE = 15 V, IC = 10 A, Tj = 125 °C
VCE(sat)
-
- 3.3
2.7 3.9
3.2
Zero gate voltage collector current
VCE = 1200 V, VGE = 0 V, Tj = 25 °C
VCE = 1200 V, VGE = 0 V, Tj = 125 °C
ICES
-
- 0.8
0.2 -
0.4 mA
Gate-emitter leakage current
VGE = 20 V, VCE = 0 V IGES - - 120 nA
AC Characteristics
Transconductance
VCE = 20 V, IC = 10 A gfs 4.7 --S
Input capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz Ciss - 530 -pF
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz Coss - 80 -
Reverse transfer capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz Crss - 38 -