MPS8550 MPS8550 C B TO-92 E PNP General Purpose Amplifier This device is designed for general purpose audio amplifier applications at collector currents to 500 mA. Sourced from Process 60. Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Parameter Value Units 25 V Collector-Base Voltage 40 V Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 800 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C VCEO Collector-Emitter Voltage VCBO VEBO *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics Symbol PD TA = 25C unless otherwise noted Characteristic RJC Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case RJA Thermal Resistance, Junction to Ambient 1997 Fairchild Semiconductor Corporation Max Units MPS8550 625 5.0 83.3 mW mW/C C/W 200 C/W (continued) Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Max Units MPS8550 PNP General Purpose Amplifier OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Sustaining Voltage* IC = 30 mA, IB = 0 25 V V(BR)CBO Collector-Base Breakdown Voltage V(BR)EBO Emitter-Base Breakdown Voltage IC = 100 A, IE = 0 40 V IE = 100 A, IC = 0 6.0 ICBO Collector-Cutoff Current VCB = 35 V, IE = 0 0.1 A ICES Colector-Cutoff Current VCE = 20 V, IE = 0 75 nA V ON CHARACTERISTICS hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage IC = 5.0 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC = 800 mA, VCE = 1.0 V IC = 800 mA, IB = 80 mA VBE(sat) Base-Emitter Saturation Voltage IC = 800 mA, IB = 80 mA 45 85 40 300 0.5 V 1.2 V *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors. 600 VCE = 1V 500 125 C 400 25 C 300 200 - 40 C 100 1 10 100 I C - COLLECTOR CURRENT (A) 1000 Base-Emitter Saturation Voltage vs Collector Current 1.2 = 10 1 - 40 C 0.8 25 C 125 C 0.6 0.4 1 10 100 I C - COLLECTOR CURRE NT (mA) 1000 V CESAT - COLLECTOR EMITTE R VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current Collector-Emitter Saturation Voltage vs Collector Current 0.8 3 = 10 0.6 0.4 25 C - 40 C 0.2 V BE( ON)- BASE EMITTER ON VOLTAGE (V) V BESAT - BASE EMITTE R VOLTAGE (V) h FE- TYP ICAL PULSED CURRE NT GAIN Typical Characteristics 125 C 0 10 100 I C - COLLECTOR CURRE NT (mA) 1000 Base Emitter ON Voltage vs Collector Current 1 - 40 C 0.8 25 C 0.6 125 C 0.4 V CE = 1V 0.2 0 1 10 100 I C - COLLECTOR CURRE NT (mA) 1000 (continued) Typical Characteristics (continued) Input and Output Capacitance vs Reverse Voltage 10 80 V CB = 35V CAPACITANCE (pF) 0.1 0.01 0.001 25 50 75 100 TA - AMBIE NT TEMP ERATURE ( C) 35 15 10 1000 800 600 400 200 0 100 150 200 BVCER - BREAKDOWN VOLTAGE (V) V CE = 1V 50 1 38 37 36 35 34 33 32 0.1 1 10 RESISTANCE (k ) Power Dissipation vs Ambient Temperature PD - POWER DISSIPATION (mW) 700 600 TO-92 400 300 200 100 0 0 25 100 Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base I C - COLLECTOR CURRENT (mA) 500 10 V CE - COLLECTOR VOLTAGE(V) 1200 20 C ob 5 0.1 125 1400 10 C ib 20 Gain Bandwidth Product vs Collector Current 1 f = 1.0 MHz 60 1 f T - GAIN BANDWIDTH PRODUCT (MHz) I CBO - COLLE CTOR CURRENT (nA) Collector-Cutoff Current vs Ambient Temperature 50 75 100 o TEMPERATURE ( C) 125 150 100 1000 MPS8550 PNP General Purpose Amplifier TO-92 Tape and Reel Data TO-92 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION FSCINT Label sample FAIRCHILD SEMICONDUCTOR CORPORATION LOT: NSID: D/C1: CBVK741B019 QTY: PN2222N See Fig 2.0 for various Reeling Styles HTB:B 10000 SPEC: D9842 SPEC REV: FSCINT Label B2 QA REV: 5 Reels per Intermediate Box (FSCINT) Customized Label F63TNR Label sample LOT: CBVK741B019 FSID: PN222N D/C1: D9842 D/C2: F63TNR Label QTY: 2000 SPEC: QTY1: QTY2: SPEC REV: CPN: N/F: F Customized Label (F63TNR)3 375mm x 267mm x 375mm Intermediate Box TO-92 TNR/AMMO PACKING INFROMATION Packing Style Quantity EOL code Reel A 2,000 D26Z E 2,000 D27Z Ammo M 2,000 D74Z P 2,000 D75Z AMMO PACK OPTION See Fig 3.0 for 2 Ammo Pack Options FSCINT Label Unit weight = 0.22 gm Reel weight with components = 1.04 kg Ammo weight with components = 1.02 kg Max quantity per intermediate box = 10,000 units 327mm x 158mm x 135mm Immediate Box Customized Label (TO-92) BULK PACKING INFORMATION EOL CODE DESCRIPTION 5 Ammo boxes per Intermediate Box Customized Label F63TNR Label 333mm x 231mm x 183mm Intermediate Box BULK OPTION LEADCLIP DIMENSION QUANTITY J18Z TO-18 OPTION STD NO LEAD CLIP 2.0 K / BOX J05Z TO-5 OPTION STD NO LEAD CLIP 1.5 K / BOX NO EOL CODE TO-92 STANDARD STRAIGHT NO LEADCLIP 2.0 K / BOX See Bulk Packing Information table Anti-static Bubble Sheets FSCINT Label 2000 units per EO70 box for std option 114mm x 102mm x 51mm Immediate Box 5 EO70 boxes per intermediate Box 530mm x 130mm x 83mm Intermediate box Customized Label FSCINT Label 10,000 units maximum per intermediate box for std option (c)2000 Fairchild Semiconductor International September 1999, Rev. B TO-92 Tape and Reel Data, continued TO-92 Reeling Style Configuration: Figure 2.0 Machine Option "A" (H) Machine Option "E" (J) Style "A", D26Z, D70Z (s/h) Style "E", D27Z, D71Z (s/h) TO-92 Radial Ammo Packaging Configuration: Figure 3.0 FIRST WIRE OFF IS COLLECTOR ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON TOP ORDER STYLE D74Z (M) FIRST WIRE OFF IS EMITTER (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON BOTTOM FIRST WIRE OFF IS EMITTER ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON BOTTOM ORDER STYLE D75Z (P) FIRST WIRE OFF IS COLLECTOR (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON TOP September 1999, Rev. B TO-92 Tape and Reel Data, continued TO-92 Tape and Reel Taping Dimension Configuration: Figure 4.0 Hd P Pd b Ha W1 d L H1 HO L1 S WO t W2 W t1 P1 F1 DO P2 PO User Direction of Feed TO-92 Reel Configuration: Figure 5.0 ITEM DESCRIPTION SYMBOL DIMENSION Base of Package to Lead Bend b 0.098 (max) Component Height Ha 0.928 (+/- 0.025) Lead Clinch Height HO 0.630 (+/- 0.020) Component Base Height H1 0.748 (+/- 0.020) Component Alignment ( side/side ) Pd 0.040 (max) Component Alignment ( front/back ) Hd 0.031 (max) Component Pitch P 0.500 (+/- 0.020) Feed Hole Pitch PO 0.500 (+/- 0.008) Hole Center to First Lead P1 0.150 (+0.009, -0.010) Hole Center to Component Center P2 0.247 (+/- 0.007) Lead Spread F1/F2 0.104 (+/- 0 .010) Lead Thickness d 0.018 (+0.002, -0.003) Cut Lead Length L 0.429 (max) Taped Lead Length L1 0.209 (+0.051, -0.052) Taped Lead Thickness t 0.032 (+/- 0.006) Carrier Tape Thickness t1 0.021 (+/- 0.006) Carrier Tape Width W 0.708 (+0.020, -0.019) Hold - down Tape Width WO 0.236 (+/- 0.012) Hold - down Tape position W1 0.035 (max) Feed Hole Position W2 0.360 (+/- 0.025) Sprocket Hole Diameter DO 0.157 (+0.008, -0.007) Lead Spring Out S 0.004 (max) Note : All dimensions are in inches. ELECT ROSTATIC SEN SITIVE D EVICES D4 D1 D2 F63TNR Label ITEM DESCRIPTION SYSMBOL MINIMUM MAXIMUM Reel Diameter D1 13.975 14.025 Arbor Hole Diameter (Standard) D2 1.160 1.200 D2 0.650 0.700 Customized Label (Small Hole) W1 Core Diameter D3 3.100 3.300 Hub Recess Inner Diameter D4 2.700 3.100 Hub Recess Depth W1 0.370 0.570 Flange to Flange Inner Width W2 1.630 Hub to Hub Center Width W3 1.690 2.090 W3 W2 Note: All dimensions are inches D3 July 1999, Rev. A TO-92 Package Dimensions TO-92 (FS PKG Code 92, 94, 96) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.1977 (c)2000 Fairchild Semiconductor International January 2000, Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G