MPS8550
PNP General Purpose Amplifier
Absolute Maximum Ratings* T A = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics T A = 25°C unless otherwise noted
Symbol Characteristic Max Units
MPS8550
PDTotal Device Dissipation
Derate above 25°C625
5.0 mW
mW/°C
RθJC Thermal Resistance, Junction t o Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 °C/W
Symbol Parameter Value Units
VCEO Collector-Emitte r Voltage 25 V
VCBO Collector-Base Voltage 40 V
VEBO Emitter-Base Voltage 6.0 V
ICCollector Curre nt - Continuous 800 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
This device is designed for general purpose audio amplifier applications
at collector currents to 500 mA. Sourced from Process 60.
CBETO-92
1997 Fairchild Semiconductor Corporation
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
MPS8550
3
MPS8550
PNP General Purpose Amplifier
(continued)
Electrical Characteristics T A = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter T est Conditions Min Max Units
ON CHARACTERISTICS
V(BR)CEO Collector-Emitter Sustaining Voltage* IC = 30 mA, IB = 025V
V(BR)CBO Collector-Base Breakdown Voltage IC = 100
µ
A, IE = 0 40 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 100
µ
A, IC = 0 6.0 V
ICBO Collector-Cutoff Current VCB = 35 V, IE = 0 0.1
µ
A
ICES Colector-Cutoff Current VCE = 20 V, IE = 0 75 nA
hFE DC Current Gain IC = 5.0 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
IC = 800 mA, VCE = 1.0 V
45
85
40 300
VCE(sat)Collector-Emitter Saturation Vo ltage IC = 800 m A, IB = 80 mA 0.5 V
VBE(sat)Base-Emitter Satu ration Voltage IC = 800 mA, IB = 80 mA 1.2 V
Typical Characteristics
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Typical Pulsed Current Gain
vs Collector Curren t
1101001000
100
200
300
400
500
600
I - COLLECTOR CU RR ENT (A)
h - TYPICAL PU LSED CUR RENT GAI N
FE
- 40 °C
C
V = 1V
CE
125 °C
25 °C
C o llecto r -Emitter Satur ati o n
Vo ltage vs C o llector Cu rrent
10 100 1000
0
0.2
0.4
0.6
0.8
I - COLL ECTOR CURRENT (m A)
V - COL LECTOR EMITTER VO LTAGE ( V)
C
CESAT
β= 10
- 40 °C
125 °C
25 °C
B ase-Emitter Satur ati o n
Vo ltag e vs C o ll ector Cu rrent
1 10 100 1000
0.4
0.6
0.8
1
1.2
I - COLLECTOR CURRENT (mA)
V - BA SE EMITTE R VOLTAGE (V)
C
BESAT
β= 10
- 40 °C
125 °C
25 °C
Base Emitter ON Vol tage vs
Collector Curre nt
1 10 100 1000
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BAS E EMITTER ON VOLTAGE (V)
C
BE(ON)
V = 1V
CE
- 40 °C
125 °C
25 °C
Typical Characteristics (continued)
PNP General Purpose Amplifier
(continued)
Power Dissipation vs
Ambient Temperature
0 255075100125150
0
100
200
300
400
500
600
700
TEMPERATURE ( C)
P - POWER DISSIPATION (mW)
D
o
TO-92
Input and Output Capaci tance
vs Reverse V o ltage
0.1 1 10 100
5
10
15
20
35
60
80
V - COLLECTOR VOLTAGE(V )
CAP ACIT ANCE (pF)
C
f = 1 .0 MHz
CE
Cob
ib
Ga in Bandwid th Prod uct
v s Co l lector Cu r re nt
1102050100150200
0
200
400
600
800
1000
1200
1400
I - COLLECTOR CURRENT (mA)
f - GAIN BANDWIDTH PRODUCT (MHz)
C
T
V = 1V
CE
C oll ec t or-E mi t te r Brea kdow n
Voltage wi th Resist ance
Bet ween Emit t e r-Base
0.1 1 10 100 1000
32
33
34
35
36
37
38
RESISTANCE (k )
BV - BREAKDOWN VOLTAGE (V)
Ω
CER
Collector-Cutoff Curre nt
vs A mb ient Temp eratu re
25 50 75 100 125
0.001
0.01
0.1
1
10
T - AMBIE NT TEMP ERATURE ( C)
I - COLLE CTOR CURRENT ( nA)
A
CBO
°
V = 35V
CB
MPS8550
TO-92 Tape and Reel Data
September 1999, Rev. B
TO-92 Packaging
Configuration: Figure 1.0
AMMO PACK OPTION
See Fig 3.0 for 2 Ammo
Pack Options
2000 units per
EO70 box for
std option
FSCINT Label
530mm x 130m m x
83mm
Inter med iate box
10,000 units maximum
per
intermediate box
for std option
FSCINT Label
114mm x 102m m x 51mm
Immed iate Box
Anti-static
Bubble Sheets
(TO-92) BULK PACKING INFORMATION
EOL
CODE DESCRIPTION LEADCLIP
DIMENSION QUANTITY
J18Z TO-18 OPTION STD NO LEAD CLIP 2.0 K / BOX
J05Z TO-5 OPTION STD NO LEAD CLIP 1.5 K / BOX
NO EOL
CODE TO-92 STANDARD
STRAIGHT NO LE A DCLIP 2.0 K / BOX
BULK OPTION
See Bulk Packing
Information table
375mm x 267m m x 375mm
Inter med iate Box
FSCINT
Label
Customized
Label
333mm x 231m m x 183mm
Inter med iate Box
FSCINT
Label
Customized
Label
TO-92 TNR/AMMO PACKING INFROMATION
Packing Style Qu antity EO L code
Reel A 2,000 D26Z
E2,000 D27Z
Ammo M 2,000 D74Z
P2,000 D75Z
U nit we ight = 0.22 gm
Reel w e ight with components = 1.04 kg
Ammo wei g ht with components = 1 .0 2 kg
Max q uantity per in te rme d iate box = 10,000 uni ts
F63TNR
Label
5 Ammo boxes per
Inter med iate Box
Customized
Label
327mm x 158m m x 135mm
Immed iate Box
LOT: CBVK741B019
NSID: PN2222N
D/C1:
D9842 SPEC REV: B2
SPEC:
QTY: 10000
QA REV:
FAIRCHILD SEMICONDUCTOR CORPORATI ON
HTB:B
(FSCINT)
F63TNR
Label
Customized
Label
5 Reels per
Inter med iate Box
TAPE and REEL OPTION
See Fig 2.0 for various
Reeling Styles
LOT: CBVK741B019
FSID: PN222N
D/C1: D9842 QTY1: SPEC REV:
SPEC:
QTY: 2000
D/C2: QTY2: CPN: N/F: F (F63TNR)3
F63TNR Label sample
FSCINT Label sample
C
5 EO70 boxes per
intermediate Box
ustomized
Label
©2000 Fairchild Semiconductor International
TO-92 Tape and Reel Data, continued
September 1999, Rev. B
TO-92 Reeling Style
Configuration: Figure 2.0
Style “A”, D26Z, D70 Z (s/h)
Machine Option “A” (H)
Style “E ”, D27 Z, D 71Z (s/ h)
Machine Option “E” (J)
FIRST WIRE OFF IS EMITTER
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
ORDER STYLE
D75Z (P)
FIRST WIRE OFF IS COL LECTOR
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON TOP
ORDER STYLE
D74Z (M)
TO-92 Radial Ammo Packaging
Configuration: Figure 3.0
FIRST WIRE OFF IS EMITTER (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
FIRST WIRE OFF IS COLLECTOR (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON TOP
ITEM DESC RIPTION
Base of Package to Lead Bend
Com p on en t He ig ht
Lead Clinch Height
Component Base Height
Component Alignment ( side/side )
Component Alignment ( front/back )
Com p on en t Pi tc h
Feed Hole Pitch
Hole Center to First Lead
Hole Center to Component Center
Lead Spread
Lead Thickness
Cut Lead Length
Taped Lead Le ngth
Taped Lead Thickness
Carrier Tape Thickness
Carrier Tape Width
Hold - down Tape Width
Hold - down Tape position
Feed Hole Position
Sprocket Hole Diameter
Lead Spring Out
SYMBOL
b
Ha
HO
H1
Pd
Hd
P
PO
P1
P2
F1/F2
d
L
L1
t
t1
W
WO
W1
W2
DO
S
DIMENSION
0. 09 8 (m ax )
0. 92 8 (+ /- 0.025)
0. 63 0 (+ /- 0.020)
0. 74 8 (+ /- 0.020)
0. 04 0 (m ax )
0. 03 1 (m ax )
0. 50 0 (+ /- 0.020)
0. 50 0 (+ /- 0.008)
0.150 (+0.009, -0.010)
0. 24 7 (+ /- 0.007)
0. 10 4 (+ /- 0 . 01 0)
0.018 (+0.002, -0.003)
0. 42 9 (m ax )
0.209 (+0.051, -0.052)
0. 03 2 (+ /- 0.006)
0. 02 1 (+ /- 0.006)
0.708 (+0.020, -0.019)
0. 23 6 (+ /- 0.012)
0. 03 5 (m ax )
0. 36 0 (+ /- 0.025)
0.157 (+0.008, -0.007)
0. 00 4 (m ax )
Note : All d im ensions are in inches.
ITEM DESC RIPTION SYSMBOL MINIMUM MAXIMUM
Ree l Diam eter D1 13.9 75 14.02 5
Arb or Hol e Di am et er (St a nd ard) D2 1.16 0 1.2 00
(Small Hole) D2 0.650 0.700
Core Diameter D3 3.100 3.300
Hub Recess Inner Diameter D4 2.700 3.100
Hub Recess Depth W1 0.370 0.570
Flange to Flange Inner Width W2 1.630 1.690
Hub to Hub Center W idth W3 2.090
Not e: All dime ns io ns are inch es
TO-92 Tape and Reel Taping
Dimension Configuration: Figure 4.0
Ha
H1 HO
PO
P2
P1 F1
DO
PPd
b
d
L1
LS
WO W2
W
t
t1
Hd
W1
TO-92 Reel
Configuration: Figure 5.0
User Direction of Feed
SENSITIVE DEVICES
ELECTROSTATIC
D1
D3
Customized Label
W2
W1 W3
F63 TNR Label
D4
D2
TO-92 Tape and Reel Data, continued
July 1999, Rev. A
TO-92 (FS PKG Code 92, 94, 96)
TO-92 Package Dimensions
January 2000, Rev. B
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.1977
©2000 Fairchild Semiconductor International
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF F AIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART ST ART™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Rev . G
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
E2CMOSTM
EnSignaTM
FACT™
F ACT Quiet Series™
FAST
SyncFET™
TinyLogic™
UHC™
VCX™
