MPSA42 / MMBTA42 / PZTA42 — NPN High Voltage Amplifier
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
MPSA42 / MMBTA42 / PZTA42 Rev. B2 1
October 2009
MPSA42 / MMBTA42 / PZTA42
NPN High Voltage Amplifier
Features
• This device is designed for application as a video output to drive color CRT and other high voltage applications.
• Sourced from Process 48.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics TA=25°C unless otherwise noted
* Device mounted on FR-4PCB 1.6” × 1.6” × 0.06”.
** Device mounted on FR-4 PCB 36 mm × 18 mm × 1.5 mm; mounting pad for the collector lead min. 6 cm2.
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 300 V
VCBO Collector-Base Voltage 300 V
VEBO Emitter-Base Voltage 6 V
ICCollector Current - Continuous 500 mA
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Parameter Max Units
MPSA42 *MMBTA42 **PZTA42
PDTotal Device Dissipation
Derate above 25°C625
5.0 240
1.92 1000
8.0 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 515 125 °C/W
SOT-23
B
E
C
Mark: 1D
TO-92
B C E
SOT-223
C
MPSA42 MMBTA42 PZTA42
E B C
MPSA42 / MMBTA42 / PZTA42 — NPN High Voltage Amplifier
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
MPSA42 / MMBTA42 / PZTA42 Rev. B2 2
Electrical Characteristics TA=25°C unless otherwise noted
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 300 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 100 μA, IE = 0 300 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 μA, IC = 0 6 V
ICBO Collector-Cutoff Current VCB = 200 V, IE = 0 0.1 μA
IEBO Emitter-Cutoff Current VEB = 6 V, IC = 0 0.1 μA
On Characteristics*
hFE DC Current Gain VCE = 10 V, IC = 1.0 mA
VCE = 10 V, IC = 10 mA
VCE = 10 V, IC = 30 mA
25
40
40
VCE(sat) Collector-Emitter Saturation Voltage IC = 20 mA, IB = 2.0 mA 0.5 V
VBE(sat) Base-Emitter On Voltage IC = 20 mA, IB = 2.0 mA 0.9 V
Small Signal Characteristics
fTCurrent Gain Bandwidth Product IC = 10mA, VCE = 20V, f = 100MHz 50 MHz
Ccb Collector-Base Capacitance VCB = 20 V, I E = 0, f = 1.0 MHz 3.0 pF
MPSA42 / MMBTA42 / PZTA42 — NPN High Voltage Amplifier
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
MPSA42 / MMBTA42 / PZTA42 Rev. B2 3
Typical Performance Characteristics
Figure 1. DC Current Gain vs Collector Current Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current Figure 4. Base-Emitter ON Voltage
vs Collector Current
Figure 5. Collector-Cutoff Current
vs Ambient Temperature Figure 6. Collector-Base and Emitter-Base
Capacitance vs Reverse Bias Voltage
1 10 100 1000
0
20
40
60
80
100
120
140 125oC
100oC
75oC
-40oC
25oC
VCE=10V
hFE- DC CURRENT GAIN
IC- COLLECTOR CURRENT [mA]
1 10 100 1000
0.01
0.1
1
10
100
TA = 125oC
100oC
75oC
-40oC25oC
VCE(SAT)- COLLECTOR-EMITTER VOLTAGE [V]
IC- COLLECTOR CURRENT [mA]
110100
0.2
0.4
0.6
0.8
1.0
125oC
100oC
75oC
-40oC
25oC
VBE(SAT)- BASE-EMITTER VOLTAGE [V]
IC- COLLECTOR CURRENT [mA]
1 10 100 1000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
TA = 125oCTA = 100oC
TA = 75oC
TA = -40oC
TA = 25oC
VBE(ON)- BASE-EMITTER VOLTAGE [V]
IC- COLLECTOR CURRENT [mA]
0 2 4 6 8 101214161820
1
10
100
COB
CIB
CAPACITANCE [pF]
REVERSE BIAS VOLTAGE [V]
MPSA42 / MMBTA42 / PZTA42 — NPN High Voltage Amplifier
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
MPSA42 / MMBTA42 / PZTA42 Rev. B2 4
Typical Performance Characteristics (Continued)
Figure 7. Power Dissipation
vs Ambient Temperature
0 25 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
SOT-23
TO-92
SOT-223
PD - POWER DISSIPATION [W]
TC - CASE TEMPERATURE [oC]
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I41
