MBR20150CT — Dual High Voltage Schottky Rectifier
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBR20150CT Rev. A1 1
June 2009
MBR20150CT
Dual High Voltage Schottky Rectifier
Features
Low Forward Voltage Drop
Low Power Loss and High Efficiency
High Surge Capability
RoHS Compliant
Matte Tin(Sn) Lead Finish
Terminal Leads Surface is Corrosion Resistant and can withstand to 260°C
Wave Soldering or per MIL-STD-750 Method 2026.
Dual common Cathode.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics* TA = 25°C unless otherwise noted
* MIL standard 883-1012 & JESD51-10
Electrical Characteristics* TA = 25°C unless otherwise noted
* DC Item are tested by Pulse Test : Pulse Width300us, Duty Cycle2%
Symbol Parameter Value Unit
VRRM Maximum Repetitive Reverse Voltage 150 V
VRMaximum DC Reverse Voltage 150 V
IF(AV) Average Rectified Forward Current, TC=120°C10 (Per Leg)
20 (Per Device) A
IFSM Peak Forward Surge Current, 8.3mS Half Sine wave 150 A
TSTG Storage Temperature Range -55 to + 150 °C
TJOperating Junction Temperature 150 °C
Symbol Parameter Max Unit
RθJC Thermal Resistance, Junction to Case per Leg 1.5 °C/W
RθJA Thermal Resistance, Junction to Ambient per Leg 62.5 °C/W
Symbol Parameter Test Condition Min. Max. Unit
IRReverse Current VR= 150V
VR= 150V
TC = 25 °C
TC = 125 °C
0.2
5mA
VFForward Voltage
IF= 10A
IF= 10A
IF= 20A
IF= 20A
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
0.85
0.75
0.95
0.85
V
Mark : MBR20150CT
1 2 3
3. Anode
1. Anode
2. Cathode
MBR20150CT — Dual High Voltage Schottky Rectifier
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBR20150CT Rev. A1 2
Typical Performance Characteristics
Figure 1. Forward Current Characteristics Figure 2. Reverse Leakage Current
Figure 3.Junction Capacitance Figure 4. Power Derating
0.01
0.1
1
10
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
TJ=125 oC
TJ=75 oC
TJ=25 oC
Forward Voltage Drop, VF[V]
Forward Current, IF[A]
0 25 50 75 100 125 150
1E-3
0.01
0.1
1
10
100
1000
TJ=125 oC
TJ=25 oC
Reverse Current, IR[uA]
Reverse Voltage, VR[V]
TJ=75 oC
0 2 4 6 8 10
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
f=1mhz
Juntion Capacitance, CJ[nF]
Reverse Voltage, VR[V]
0 25 50 75 100 125 150
0
5
10
15
20
25
30
DC
Average Forward Current, I F(AV)[A]
Case Temperature, TC[oC]
MBR20150CT — Dual High Voltage Schottky Rectifier
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBR20150CT Rev. A1 3
Physical Dimensions
TO-220 (DUAL GAUGE)
Dimensions in Millimeters
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I40