DATA SH EET
Product specification
Supersedes data of 2000 Jul 25 2001 Nov 01
DISCRETE SEMICONDUCTORS
CGD914; CGD914MI
860 MHz, 20 dB gain power
doubler amplifier
a
ndbook, halfpage
M3D252
2001 Nov 01 2
Philips Semiconductors Product specification
860 MHz, 20 dB gain power doubler amplifier CGD914; CGD914MI
FEATURES
•Excellent linearity
•Extremely low noise
•Excellent return loss properties
•Rugged construction
•Gold metallization ensures excellent reliability.
APPLICATIONS
•CATV systems operating in the 40 to 870 MHz
frequency range.
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
at a voltage supply of 24 V (DC), employing both GaAs
and Si dies. Both modules are electrically identical, only
the pinning is different.
PINNING - SOT115J
PIN DESCRIPTION
CGD914 CGD914MI
1 input output
2 and 3 common common
5+V
B+VB
7 and 8 common common
9 output input
handbook, halfpage
789
2351
Side view
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Gppower gain f = 45 MHz 19.75 20.25 dB
f = 870 MHz 20.2 21.5 dB
Itot total current consumption (DC) VB= 24 V 345 375 mA
SYMBOL PARAMETER MIN. MAX. UNIT
VBsupply voltage −30 V
ViRF input voltage −−
single tone −70 dBmV
132 channels flat −45 dBmV
Tstg storage temperature −40 +100 °C
Tmb operating mounting base temperature −20 +100 °C
2001 Nov 01 3
Philips Semiconductors Product specification
860 MHz, 20 dB gain power doubler amplifier CGD914; CGD914MI
CHARACTERISTICS
Bandwidth 45 to 870 MHz; VB= 24 V; Tmb =35°C; ZS=Z
L=75Ω.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Gppower gain f = 45 MHz 19.75 20 20.25 dB
f = 870 MHz 20.2 21 21.5 dB
SL slope straight line f = 45 to 870 MHz 0.2 1 1.5 dB
FL flatness straight line f = 45 to 100 MHz −0.25 −+0.25 dB
f = 100 to 800 MHz −0.6 −+0.4 dB
f = 800 to 870 MHz −0.45 −+0.2 dB
flatness narrow band in each 6 MHz segment −−±0.1 dB
s11 input return losses f = 40 to 80 MHz 20 −−dB
f = 80 to 160 MHz 20 −−dB
f = 160 to 320 MHz 18 −−dB
f = 320 to 550 MHz 16 −−dB
f = 550 to 650 MHz 15 −−dB
f = 650 to 750 MHz 14 −−dB
f = 750 to 870 MHz 14 −−dB
f = 870 to 914 MHz 10 −−dB
s22 output return losses f = 40 to 80 MHz 21 −−dB
f = 80 to 160 MHz 21 −−dB
f = 160 to 320 MHz 20 −−dB
f = 320 to 550 MHz 19 −−dB
f = 550 to 650 MHz 18 −−dB
f = 650 to 750 MHz 17 −−dB
f = 750 to 870 MHz 16 −−dB
f = 870 to 914 MHz 14 −−dB
s21 phase response f = 50 MHz −45 −+45 deg
s12 reverse isolation RFout to RFin −−22 dB
CTB composite triple beat 79 chs; fm= 445.25 MHz; note 1 −−−76 dB
112 chs; fm= 649.25 MHz; note 2 −−−64 dB
132 chs; fm= 745.25 MHz; note 3 −−−55 dB
79 chs flat; Vo= 44 dBmV; fm= 547.25 MHz −−−73 dB
112 chs flat; Vo= 44 dBmV; fm= 745.25 MHz −−−64 dB
132 chs flat; Vo= 44 dBmV; fm= 745.25 MHz −−−60 dB
Xmod cross modulation 79 chs; fm= 55.25 MHz; note 1 −−−70 dB
112 chs; fm= 55.25 MHz; note 2 −−−62 dB
132 chs; fm= 55.25 MHz; note 3 −−−57 dB
79 chs flat; Vo= 44 dBmV; fm= 55.25 MHz −−−69 dB
112 chs flat; Vo= 44 dBmV; fm= 55.25 MHz −−−65 dB
132 chs flat; Vo= 44 dBmV; fm= 55.25 MHz −−−63 dB
2001 Nov 01 4
Philips Semiconductors Product specification
860 MHz, 20 dB gain power doubler amplifier CGD914; CGD914MI
Notes
1. Vo= 38 dBmV at 54 MHz; Tilt = 7.3 dB (55 to 547 MHz) extrapolated to 12 dB at 870 MHz.
2. Vo= 38 dBmV at 54 MHz; Tilt = 10.2 dB (55 to 745 MHz) extrapolated to 12 dB at 870 MHz.
3. Vo= 38 dBmV at 54 MHz; Tilt = 12 dB (55 to 865 MHz).
4. fp= 55.25 MHz; Vp= 60 dBmV; fq= 493.25 MHz; Vq= 60 dBmV; measured at fp+f
q= 548.5 MHz.
5. fp= 55.25 MHz; Vp= 60 dBmV; fq= 691.25 MHz; Vq= 60 dBmV; measured at fp+f
q= 746.5 MHz.
6. fp= 55.25 MHz; Vp= 60 dBmV; fq= 805.25 MHz; Vq= 60 dBmV; measured at fp+f
q= 860.5 MHz.
7. Measured according to DIN45004B: fp= 540.25 MHz; Vp=V
o
; fq= 547.25 MHz; Vq=V
o−6 dB; fr= 549.25 MHz;
Vr=V
o−6 dB; measured at fp+f
q−f
r= 538.25 MHz.
8. Measured according to DIN45004B: fp= 740.25 MHz; Vp=V
o
; fq= 747.25 MHz; Vq=V
o−6 dB; fr= 749.25 MHz;
Vr=V
o−6 dB; measured at fp+f
q−f
r= 738.25 MHz.
9. Measured according to DIN45004B: fp= 851.25 MHz; Vp=V
o
; fq= 858.25 MHz; Vq=V
o−6 dB; fr= 860.25 MHz;
Vr=V
o−6 dB; measured at fp+f
q−f
r= 849.25 MHz.
10. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 30 V.
CSO Sum composite second
order distortion (sum) 79 chs; fm= 446.5 MHz; note 1 −−−71 dB
112 chs; fm= 746.5 MHz; note 2 −−−60 dB
132 chs; fm= 860.5 MHz; note 3 −−−56 dB
79 chs flat; Vo= 44 dBmV; fm= 548.5 MHz −−−63 dB
112 chs flat; Vo= 44 dBmV; fm= 746.5 MHz −−−54 dB
132 chs flat; Vo= 44 dBmV; fm= 860.5 MHz −−−49 dB
CSO Diff composite second
order distortion (diff) 79 chs; fm= 150 MHz; note 1 −−−59 dB
112 chs; fm= 150 MHz; note 2 −−−53 dB
132 chs; fm= 150 MHz; note 3 −−−48 dB
79 chs flat; Vo= 44 dBmV; fm= 150 MHz −−−60 dB
112 chs flat; Vo= 44 dBmV; fm= 150 MHz −−−59 dB
132 chs flat; Vo= 44 dBmV; fm= 150 MHz −−−57 dB
NF noise figure f = 50 MHz −2.5 3 dB
f = 550 MHz −2.5 3 dB
f = 750 MHz −2.6 3.5 dB
f = 870 MHz −3 3.5 dB
d2second order distortion note 4 −−−60 dB
note 5 −−−54 dB
note 6 −−−50 dB
Vooutput voltage dim =−60 dB; note 7 69 −−dBmV
dim =−60 dB; note 8 66 −−dBmV
dim =−60 dB; note 9 63 −−dBmV
Itot total current
consumption (DC) note 10 345 360 375 mA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
2001 Nov 01 5
Philips Semiconductors Product specification
860 MHz, 20 dB gain power doubler amplifier CGD914; CGD914MI
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CTB
(dB)
200 1000
−60
−70
−90
−100
−80
52
48
40
36
44
400 600 800
MCD976
(1)
(2)
(3)
(4)
Fig.2 Composite triple beat as a function of
frequency under tilted conditions.
ZS=Z
L=75Ω; VB= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
Xmod
(dB)
200 1000
−60
−70
−90
−100
−80
52
48
40
36
44
400 600 800
MCD977
(1)
(2)
(3)
(4)
Fig.3 Crossmodulationasafunctionoffrequency
under tilted conditions.
ZS=Z
L=75Ω; VB= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200 1000
−50
−60
−80
−90
−70
52
48
40
36
44
400 600 800
MCD978
(1)
(2)
(3)
(4)
Fig.4 Compositesecondorderdistortion(sum)as
a function of frequency under tilted
conditions.
ZS=Z
L=75Ω; VB= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0 1000
−50
−60
−70
−80
−90
−100
54
50
46
42
38
34
200 400
CSO
(dB) Vo
(dBmV)
f (MHz)
600 800
MCD979
(1)
(2)
(3)
(4)
Fig.5 Composite second order distortion (diff) as
a function of frequency under tilted
conditions.
ZS=Z
L=75Ω; VB= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
2001 Nov 01 6
Philips Semiconductors Product specification
860 MHz, 20 dB gain power doubler amplifier CGD914; CGD914MI
handbook, halfpage
0
−60
−70
−80
−90 200
CTB
(dB)
48
44
40
36
Vo
(dBmV)
f (MHz)
1000
400 600 800
MCD980
(2)
(3)
(4)
(1)
Fig.6 Composite triple beat as a function of
frequency under flat conditions.
ZS=Z
L=75Ω; VB= 24 V; 79 chs flat (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
−60
−70
−80
−90 200
Xmod
(dB)
48
44
40
36
Vo
(dBmV)
f (MHz)
1000
400 600 800
MCD981
(2)
(3)
(4)
(1)
Fig.7 Crossmodulationasafunctionoffrequency
under flat conditions.
ZS=Z
L=75Ω; VB= 24 V; 79 chs flat (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200 1000
−50
−60
−80
−90
−70
48
44
36
32
40
400 600 800
MCD982
(2)
(3)
(4)
(1)
Fig.8 Compositesecondorderdistortion(sum)as
a function of frequency under flat
conditions.
ZS=Z
L=75Ω; VB= 24 V; 79 chs flat (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200 1000
−50
−60
−80
−90
−70
48
44
36
32
40
400 600 800
MCD983
(2)
(3)
(4)
(1)
Fig.9 Composite second order distortion (diff) as
a function of frequency under flat
conditions.
ZS=Z
L=75Ω; VB= 24 V; 79 chs flat (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
2001 Nov 01 7
Philips Semiconductors Product specification
860 MHz, 20 dB gain power doubler amplifier CGD914; CGD914MI
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CTB
(dB)
200 1000
−40
−50
−70
−80
−60
52
48
40
36
44
400 600 800
MCD984
(1)
(2)
(3)
(4)
Fig.10 Composite triple beat as a function of
frequency under tilted conditions.
ZS=Z
L=75Ω; VB= 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
Xmod
(dB)
200 1000
−50
−60
−80
−90
−70
52
48
40
36
44
400 600 800
MCD985
(1)
(2)
(3)
(4)
Fig.11 Crossmodulationasafunctionoffrequency
under tilted conditions.
ZS=Z
L=75Ω; VB= 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200 1000
−50
−60
−80
−90
−70
52
48
40
36
44
400 600 800
MCD986
(1) (2)
(3)
(4)
Fig.12 Compositesecondorderdistortion(sum)as
a function of frequency under tilted
conditions.
ZS=Z
L=75Ω; VB= 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200 1000
−50
−60
−80
−90
−70
52
48
40
36
44
400 600 800
MCD987
(1)
(2)
(3)
(4)
Fig.13 Composite second order distortion (diff) as
a function of frequency under tilted
conditions.
ZS=Z
L=75Ω; VB= 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
2001 Nov 01 8
Philips Semiconductors Product specification
860 MHz, 20 dB gain power doubler amplifier CGD914; CGD914MI
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CTB
(dB)
200 1000
−50
−60
−80
−90
−70
48
44
36
32
40
400 600 800
MCD988
(1)
(2)
(3)
(4)
Fig.14 Composite triple beat as a function of
frequency under flat conditions.
ZS=Z
L=75Ω; VB= 24 V; 112 chs flat (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
Xmod
(dB)
200 1000
−60
−70
−90
−100
−80
48
44
36
32
40
400 600 800
MCD989
(1)
(2)
(3)
(4)
Fig.15 Crossmodulationasafunctionoffrequency
under flat conditions.
ZS=Z
L=75Ω; VB= 24 V; 112 chs flat (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200 1000
−50
−60
−80
−90
−70
48
44
36
32
40
400 600 800
MCD990
(1)
(2)(3)
(4)
Fig.16 Compositesecondorderdistortion(sum)as
a function of frequency under flat
conditions.
ZS=Z
L=75Ω; VB= 24 V; 112 chs flat (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200 1000
−50
−60
−80
−90
−70
48
44
36
32
40
400 600 800
MCD991
(2)
(1)
(3)
(4)
Fig.17 Composite second order distortion (diff) as
a function of frequency under flat
conditions.
ZS=Z
L=75Ω; VB= 24 V; 112 chs; flat (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
2001 Nov 01 9
Philips Semiconductors Product specification
860 MHz, 20 dB gain power doubler amplifier CGD914; CGD914MI
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CTB
(dB)
200 1000
−40
−50
−70
−80
−60
52
48
40
36
44
400 600 800
MCD992
(1)
(2)
(3)
(4)
Fig.18 Composite triple beat as a function of
frequency under tilted conditions.
ZS=Z
L=75Ω; VB= 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
Xmod
(dB)
200 1000
−50
−60
−80
−90
−70
52
48
40
36
44
400 600 800
MCD993
(1)
(2)
(3)
(4)
Fig.19 Crossmodulationasafunctionoffrequency
under tilted conditions.
ZS=Z
L=75Ω; VB= 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200 1000
−40
−50
−70
−80
−60
52
48
40
36
44
400 600 800
MCD994
(1)
(2)
(3)
(4)
Fig.20 Compositesecondorderdistortion(sum)as
a function of frequency under tilted
conditions.
ZS=Z
L=75Ω; VB= 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0 1000
−40
−50
−60
−70
−80
−90
52
48
44
40
36
32
200 400
CSO
(dB) Vo
(dBmV)
f (MHz)
600 800
MCD995
(1)
(2)
(3)
(4)
Fig.21 Composite second order distortion (diff) as
a function of frequency under tilted
conditions.
ZS=Z
L=75Ω; VB= 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
2001 Nov 01 10
Philips Semiconductors Product specification
860 MHz, 20 dB gain power doubler amplifier CGD914; CGD914MI
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CTB
(dB)
200 1000
−40
−50
−70
−80
−60
48
44
36
32
40
400 600 800
MCD996
(1)
(2)
(3)
(4)
Fig.22 Composite triple beat as a function of
frequency under flat conditions.
ZS=Z
L=75Ω; VB= 24 V; 132 chs flat (50 to 870 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
Xmod
(dB)
200 1000
−60
−70
−90
−100
−80
48
44
36
32
40
400 600 800
MCD997
(1)
(2)
(3)
(4)
Fig.23 Crossmodulationasafunctionoffrequency
under flat conditions.
ZS=Z
L=75Ω; VB= 24 V; 132 chs flat (50 to 870 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200 1000
−50
−60
−80
−90
−70
48
44
36
32
40
400 600 800
MCD998
(1)
(2)
(3)
(4)
Fig.24 Compositesecondorderdistortion(sum)as
a function of frequency under flat
conditions.
ZS=Z
L=75Ω; VB= 24 V; 132 chs flat (50 to 870 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200 1000
−40
−50
−70
−80
−60
48
44
36
32
40
400 600 800
MCD999
(1)
(2)
(3)
(4)
Fig.25 Composite second order distortion (diff) as
a function of frequency under flat
conditions.
ZS=Z
L=75Ω; VB= 24 V; 132 chs flat (50 to 870 MHz).
(1) Vo.
(2) Typ. +3 σ.(3) Typ.
(4) Typ. −3σ.
2001 Nov 01 11
Philips Semiconductors Product specification
860 MHz, 20 dB gain power doubler amplifier CGD914; CGD914MI
PACKAGE OUTLINE
UNIT A2
max. cee
1q
Q
max. q1q2U1
max. U2W
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 20.8 9.1 0.51
0.38 0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8 4.15
3.85 2.4 38.1 25.4 10.2 4.2 44.75 8 0.25 0.1 3.8
bF
p
6-32
UNC
yw
S
DIMENSIONS (mm are the original dimensions)
SOT115J
0 5 10 mm
scale
A
max. D
max. L
min.
E
max. Z
max.
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J
D
U1q
q2
q1
b
F
S
A
Z p
E
A2
L
c
d
Q
U2
M
w
78923
We
e
1
5
p
1
d
max.
yMB
yMB
B
99-02-06
yMB
2001 Nov 01 12
Philips Semiconductors Product specification
860 MHz, 20 dB gain power doubler amplifier CGD914; CGD914MI
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET STATUS(1) PRODUCT
STATUS(2) DEFINITIONS
Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseorat anyotherconditionsabove those giveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswill be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseof anyofthese products,conveysnolicenceortitle
under any patent, copyright, or mask work right to these
products,andmakesno representations orwarrantiesthat
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
2001 Nov 01 13
Philips Semiconductors Product specification
860 MHz, 20 dB gain power doubler amplifier CGD914; CGD914MI
NOTES
2001 Nov 01 14
Philips Semiconductors Product specification
860 MHz, 20 dB gain power doubler amplifier CGD914; CGD914MI
NOTES
2001 Nov 01 15
Philips Semiconductors Product specification
860 MHz, 20 dB gain power doubler amplifier CGD914; CGD914MI
NOTES
© Koninklijke Philips Electronics N.V. 2001 SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a worldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands 613518/06/pp16 Date of release: 2001 Nov 01 Document order number: 9397 750 08861
