S8M02-B SERIES
MAXIMUM RATINGS
(Tj= 25
℃
unless otherwise noticed)
FEATURES
Blocking Voltage to 600 Volts
On-State Current Rating of 8 Amperes RMS at 80
℃
High Surge Current Capability - 80 Amperes
Rugged, Economical TO220AB Package
Glass Passivated Junctions for Reliability and Uniformity
Minimum and Maximum Values of IGT, VGT and IH Specified
forEase of Design
Immunity to dv/dt - 5 V/msec Minimum at 110
℃
Pb-Free Package
MECHANICAL DATA
Case: Molded plastic
Weight: 0.07 ounces, 2.0 grams
Sensitive Gate
Sillicon Controlled Rectifiers
Reverse Blocking Thyristors
SCRs
8 AMPERES RMS
600 thru VOLTS
Rating Symbol Value Unit
Peak Repetitive Off– State Voltage (
T
J
= -40 to 125
℃
, Sine Wave, 50 to 60 Hz; Gate Open)
V
DRM
,
V
RRM
600 Volts
On-State RMS Current (180° Conduction Angles,
T
C
= 80 )
℃
I
T(RMS)
8 Amp
Peak Non-Repetitive Surge Current (1/2 Cycle, SIne Wave 60 Hz,
Tj
= 25
℃
) I
TSM
80 Amp
Circuit Fusing Consideration (t = 8.3 ms) I t 26.5 A s
Forward Peak Gate Power ( Pulse Width 1.0 us,
≦
Tc =
80 )
℃
P
GM
5.0 Watt
Forward Average Gate Power ( t= 8.3 ms,
Tc
=
80
℃
) P
G(AV)
0.5 Watt
Forward Peak Gate Current (Pulse Width 1.0 us,
≦
Tc
= 80 )
℃
I
GM
2.0 Amp
Operating Junction Temperature Range
T
J
-40 to +110
℃
Storage Temperature Range Tstg -40 to +150
℃
22
Notice: (1) V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for
zero or negative gate voltage; positive gate voltage shall not be applied concurrent with
negative potential on the anode. Blocking voltages shall not be tested with a constant
current source such that the voltage ratings of the devices are exceeded
REV. 8, Oct-20010, KTXC09
S8M02-600B
SEMICONDUCTOR
LITE-ON
1 Cathode
2 Anode
3 Gate
4 Anode
PIN ASSIGNMENT
TO-220AB
All Dimensions in millimeter
TO-220AB
DIM. MIN. MAX.
A
C
D
E
F
G
H
B
14.22 15.88
10.67
9.65
2.54 3.43
6.86
5.84
8.26 9.28
- 6.35
12.70 14.73
0.51
2.79
N
M
L
K
J
I 1.14
2.29
0.67 0.40
3.53 4.09
3.56 4.83
1.14 1.40
2.92
2.03
O 1.37 1.17
HH
A
B
C
K
J
I
G
F
E
D
N
M
L
PIN
13
2
O
Characteristic Symbol Value Unit
Thermal Resistance - Junction to Case
- Junction to Ambient
RthJC
RthJA
2.2
62.5
/
℃
W
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds
T
L
260
℃
Characteristics Symbol Min Typ Max Unit
Peak Reptitive Forward or Reverse Blocking Current T
J
=25
℃
(V
D
=Rated V
DRM
and V
RRM
; R
GK
=1K Ohms) T
J
=110
℃
I
DRM
I
RRM
----
----
----
----
10
500 uA
Peak Forward On-State Voltage
(I
TM=
16A Peak @Tp 2.0 ms, Duty Cycle 2%)
≦ ≦
V
TM
---- ---- 1.8 Volts
Gate Trigger Current (V
D
= 12 V; R
L
= 100 Ohms) I
GT
5.0 25 200 uA
Holding Current (V
D
= 12 V, Gate Open, Initiating Current = 200 mA) I
H
---- 0.5 6.0 mA
Latch Current (V
D
= 12 V, I
G
= 200 uA) I
L
---- 0.6 8.0 mA
Gate Trigger Voltage (V
D
= 12 V; R
L
=100 Ohms)
V
GT
0.3 0.65 1.0 Volts
Gate Non Trigger Voltage (VD = 12 V; RL =100 Ohms), TJ=110
℃
V
GD
0.2 ---- ---- Volts
Critical Rate of Rise of Off-State Voltage
(V
D
=67% V
DRM
, R
GK
=1K Ohm, C
GK
= 1 uF, T
J
=110
℃
)dv/dt 5.0 15 ---- V/us
Repetitive Critical Rate of Rise of On-State Current
IPK=50A, Pw=40 usec, diG/dt=1A/us, Igt=10mA di/dt ---- ---- 100 A/us
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(T
J
=25 unless otherwise noted)
℃
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
*Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
≦ ≦
RATING AND CHARACTERISTIC CURVES
S8M02-B SERIES
RATING AND CHARACTERISTIC CURVES
S8M02-B SERIES
RATING AND CHARACTERISTIC CURVES
S8M02-B SERIES
Legal Disclaimer Notice
S8M02-B SERIES
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specifications at any time without notice. Customers should obtain and confirm
the latest product information and specifications before final design, purchase or
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devices or systems without express written approval of LSC.
Important Notice and Disclaimer
