Jan. 2000
Unit: Ω
The eight circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
INPUT
OUTPUT
GND
10.5K
10K
Vz=7V
COM
Package type
18P4G(P)
20P2N-A(FP)
Package type
20P2E-A(KP)
IN7→
712
IN5→
514
INPUT OUTPUT
IN4→
415
IN3→
3
IN2→
217
1
IN1→
18
IN6→
613
→O1
→O2
→O3
→O4
→O5
→O6
→O7
16
IN8→
811
GND
9
→O8
10
→COM COMMOM
IN7→
813
IN5→
615
INPUT OUTPUT
IN4→
516
IN3→
4
IN2→
IN1→
IN6→
714
318
→O1
→O2
→O3
→O4
→O5
→O6
→O7
17
IN8→
912
GND
10
→O8
11
219
120
NCNC
→COM COMMOM
NC : No connection
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63815P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
PIN CONFIGURATION
DESCRIPTION
M63815P/FP/KP are eight-circuit Single transistor arrays
with clamping diodes. The circuits are made of NPN transis-
tors. Both the semiconductor integrated circuits perform
high-current driving with extremely low input-current supply.
FEATURES
●Three package configurations (P, FP, and KP)
●Medium breakdown voltage (BVCEO ≥ 35V)
●Synchronizing current (IC(max) = 300mA)
●With clamping diodes
●With zener diodes
●Low output saturation voltage
●Wide operating temperature range (Ta = –40 to +85°C)
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
FUNCTION
The M63815P/FP/KP each have eight circuits consisting of
NPN transistor. A spike-killer clamping diode is provided be-
tween each output pin (collector) and COM pin. The transis-
tor emitters are all connected to the GND pin. The transistors
allow synchronous flow of 300mA collector current. A maxi-
mum of 35V voltage can be applied between the collector
and emitter.
CIRCUIT DIAGRAM
POWEREX
Jan. 2000
M63815P
M63815FP
M63815KP
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63815P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Duty Cycle no more than 50%
Duty Cycle no more than 100%
Duty Cycle no more than 30%
Duty Cycle no more than 100%
Duty Cycle no more than 12%
Duty Cycle no more than 100%
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85 °C)
V
(BR) CEO
VIN(on)
VF
IR
hFE
V
V
V
µA
—
35
—
—
13
—
—
50
—
—
—
19
1.2
—
—
—
0.2
0.8
23
2.0
10
—
Symbol UnitParameter Test conditions Limits
min typ max
V
Collector-emitter breakdown voltage
“On” input voltage
Clamping diode forward volltage
Clamping diode reverse current
DC amplification factor
ICEO = 10µA
IIN = 1mA, IC = 10mA
IIN = 2mA, IC = 150mA
IIN = 1mA, IC = 10mA
IF = 250mA
VR = 35V
VCE = 10V, IC = 10mA
VCE(sat)
Collector-emitter saturation voltage
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
VOV0
0
0
0
0
0
0
0
—
—
—
—
—
—
—
—
35
250
170
250
130
250
100
30
Symbol UnitParameter Test conditions Limits
min typ max
Output voltage
mA
V
IC
VIN Input voltage
Collector current
(Current per 1 cir-
cuit when 8 circuits
are coming on si-
multaneously)
M63815P
M63815FP
M63815KP
ns
ns
—
—140
240 —
—
Symbol UnitParameter Test conditions Limits
min typ max
Turn-on time
Turn-off time
ton
toff CL = 15pF (note 1)
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
V
mA
V
mA
V
W
°C
°C
–0.5 ~ +35
300
–0.5 ~ +35
300
35
1.79
1.10
0.68
–40 ~ +85
–55 ~ +125
RatingsSymbol Parameter Conditions Unit
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85 °C)
Output, H
Current per circuit output, L
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
Ta = 25°C, when mounted
on board
POWEREX
Jan. 2000
ton toff
50%
50%
50%
50%
INPUT
OUTPUT
(1)Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω, V
IH
= 18V
(2)Input-output conditions : R
L
= 220Ω, Vo = 35V
(3)Electrostatic capacity C
L
includes floating capacitance at
connections and input capacitance at probes
PG
50Ω
R
L
OUTPUT
INPUT Vo
C
L
OPEN
Measured device
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63815P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
Thermal Derating Factor Characteristics
Ambient temperature Ta (°C)
Power dissipation Pd (W)
Input Characteristics
Input voltage V
I
(V)
Input current I
I
(mA)
Duty Cycle-Collector Characteristics
(M63815P)
Duty cycle (%)
Collector current Ic (mA)
Duty Cycle-Collector Characteristics
(M63815P)
Duty cycle (%)
Collector current Ic (mA)
2.0
1.5
1.0
0.5
0
025 50 75 10085
0100
20 40 60 80
400
300
200
100
0
6
7
8
1~5
400
300
200
100
00100
20 40 60 80
1~3
4
5
6
7
8
M63815P
M63815FP
M63815KP
0.931
0.572
0.354
4
3
2
1
0030252015105
Ta = –40°C
Ta = 25°C
Ta = 85°C
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 25°C
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 85°C
POWEREX
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63815P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Duty Cycle-Collector Characteristics
(M63815FP)
Duty cycle (%)
Collector current Ic (mA)
Duty Cycle-Collector Characteristics
(M63815FP)
Duty Cycle-Collector Characteristics
(M63815KP)
Duty cycle (%)
Collector current Ic (mA)
400
300
200
100
00100
20 40 60 80
1~3
5
6
7
8
4
400
300
200
100
00100
20 40 60 80
1
2
3
4
5
67
8
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage V
CE(sat)
(V)
Collector current Ic (mA)
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage V
CE(sat)
(V)
Collector current Ic (mA)
250
200
150
100
50
00 0.2 0.4 0.6 0.8
100
80
60
40
20
00 0.05 0.10 0.15 0.20
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 25°C
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 85°C
Duty Cycle-Collector Characteristics
(M63815KP)
Duty cycle (%)
Collector current Ic (mA)
Duty cycle (%)
Collector current Ic (mA)
400
300
200
100
00100
20 40 60 80
1~2
4
5
6
87
3
400
300
200
100
00100
20 40 60 80
1
2
3
4
5
6
7
8
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 25°C
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 85°C
Ta = 25°C
I
B
= 3mA
I
B
= 2mA
I
B
= 1.5mA
I
B
= 1mA
I
B
= 0.5mA
Ta = 25°CV
I
= 32V
V
I
= 28V V
I
= 24V
V
I
= 20V
V
I
= 16V
V
I
= 12V
POWEREX
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63815P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Grounded Emitter Transfer Characteristics
Input voltage V
I
(V)
Collector current Ic (mA)
Grounded Emitter Transfer Characteristics
Input voltage V
I
(V)
Collector current Ic (mA)
Clamping Diode Characteristics
Forward bias voltage V
F
(V)
Forward bisa current I
F
(mA)
50
40
30
20
10
0
250
200
150
100
50
0
250
200
150
100
50
00 0.4 0.8 1.2 1.6 2.0
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage V
CE(sat)
(V)
Collector current Ic (mA)
DC Amplification Factor
Collector Current Characteristics
Collector current Ic (mA)
DC amplification factor h
FE
100
80
60
40
20
00 0.05 0.10 0.15 0.20 10
0
10
1
10
2
10
1
10
2
10
3
2357 2357
2
3
5
7
2
3
5
7
10
3
23 57
I
I
= 2mA
Ta = –40°CTa = 25°C
Ta = 85°C
Ta = 25°C
V
CE
10V
02468 1210
V
CE
= 4V
Ta = –40°C
048121620
V
CE
= 4V
Ta = 85°C
Ta = –40°C
Ta = 85°C
Ta = 25°CTa = –40°C
Ta = 25°C
Ta = 85°C
Ta = 25°C
POWEREX
