Copyright © Harris Corporation 1995
6-5
SEMICONDUCTOR
Package
JEDEC TO-220AB
Symbol
ANODE 2
CATHODE
ANODE 1
CATHODE
(FLANGE)
K
A1 A2
Features
• Ultra Fast Recovery Time (<35ns)
• Low Forward Voltage
• Low Thermal Resistance
• Planar Design
• Wire-Bonded Construction
Applications
• General Purpose
• Power Switching Circuits to 100kHz
• Full-Wave Rectification
Description
The BYW51 series devices are low forward voltage drop,
ultra-fast-recovery rectifiers (tRR < 35ns). They use a planar
ion-implanted epitaxial construction.
These devices are intended for use as output rectifiers and
fly-wheel diodes in a variety of high-frequency pulse-width-
modulated and switching regulators. Their low stored charge
and attendant fast reverse-recovery behavior minimize elec-
trical noise generation and in many circuits markedly reduce
the turn-on dissipation of the associated power switching
transistors.
PACKAGING AVAILABILITY
PART NUMBER PACKAGE BRAND
BYW51-100 TO-220AB BYW51100
BYW51-150 TO-220AB BYW51150
BYW51-200 TO-220AB BYW51200
NOTE: When ordering, use the entire part number.
August 1995
BYW51-100,
BYW51-150, BYW51-200
8A, 100V - 200V Ultrafast Dual Diodes
Absolute Maximum Ratings Per Junction BYW51-100 BYW51-150 BYW51-200 UNITS
Maximum Peak Repetitive Reverse Voltage . . . . . . . . . . . VRRM 100 150 200 V
Maximum Peak Surge Voltage. . . . . . . . . . . . . . . . . . . . . . VRSM 110 165 220 V
Repetitive Peak Surge Current. . . . . . . . . . . . . . .lFRM, tP < 10µs 100 100 100 A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . lF(RMS), Total 20 20 20 A
Average Rectified forward Current. . . . . . . . . . . . . . .lF(AV), Total
TC = +125oC, a = 0.5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 888A
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . lFSM
tP = 10ms, Sinusoidal 100 100 100 A
Maximum Power Dissipation . . . . . . . . . . . . . . PD, TC = +125oC202020W
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . TJ-40 + 150 -40 + 150 -40 + 150 oC
TL (Lead Temperature During Soldering). . . . . . . . . . . . . . . . . . .
At Distance > 1/8 in. (3.17mm) From Case For 10s max. 260 260 260 oC
File Number 1412.2
6-6
Specifications BYW51-100, BYW51-150, BYW51-200
Electrical Specifications Per Junction
SYMBOL
TEST CONDITIONS LIMITS
UNITS
TJ
oC
VOLTAGE
VR
V
CURRENT
iF
A
BYW51-100 BYW51-150 BYW51-200
MIN MAX MIN MAX MIN MAX
IR25100 - -5----µA
150 - - - - 5 - - µA
200 - -----5µA
100100 - -1----mA
150 - - - - 1 - - mA
200 - -----1mA
V
F25 - 8 - 0.95 - 0.95 - 0.95 V
100 - 8 - 0.89 - 0.89 - 0.89 V
tRR 25 - 1 (Note 1) - 35 - 35 - 35 ns
RθJC, Per Leg - - - 2.5 - 2.5 - 2.5 oC/W
RθJC, Total - - - 1.3 - 1.3 - 1.3 oC/W
RθJA - - -60-60-60
o
C/W
CJ25 10 0 All types (typ.) 40 pF
NOTE:
1. dIF/dt > 50A/µs, IRM(rec) <1A, IRR = 0.25A.
6-7
BYW51-100, BYW51-150, BYW51-200
Typical Performance Curves
FIGURE 1. PEAK SURGE FORWARD CURRENT vs SURGE
DURATION FIGURE 2. THERMAL IMPEDANCE vs PULSE WIDTH
(PER JUNCTION)
FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD
VOLTAGE DROP FIGURE 4. TYPICAL REVERSE CURRENT vs VOLTAGE
TJ = 100oC
REAPPLIED VR(PK) = VRM
0
IFSM, PEAK SURGE (NON-REPETITIVE)
FORWARD CURRENT (A)
1 10 100
N, NUMBER OF HALF-CYCLES IN SURGE DURATION AT 50Hz
160
120
80
40
20
140
100
60
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
01 10 1000
tP, PULSE WIDTH (ms)
100
RθJC, THERMAL IMPEDANCE (oC/W)
100
10
1
0.1
0.01
IF, FORWARD CURRENT (A)
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
VF, FORWARD VOLTAGE DROP (V)
TJ = +25oC
TJ = +125oC
TJ = +150oC
TJ = +100oC
TJ = -55oC10,000
1000
100
10
1
0.1
0.010.01 0.1 1 10 1000100
VRM, VOLTAGE IN % RATED VRRM (V)
IR, REVERSE CURRENT (µA)
TJ = +25oC
TJ = +125oC
TJ = +100oC
TJ = +150oC
