BAS116LP3
Document number: DS35241 Rev. 5 - 2 1 of 4
www.diodes.com January 2012
© Diodes Incorporated
BAS116LP3
NEW PRODUCT
ULTRA-SMALL SURFACE MOUNT LOW LEAKAGE DIODE
Features
• Ultra-Small Leadless Surface Mount Package (0.6 x 0.3mm)
• Ultra-Low Profile Package (0.3mm)
• Very Low Leakage Current
• Low Capacitance
• Ideal for Compact Battery Powered Portable Electronics
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: X3-DFN0603-2
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: Cathode Bar
• Terminals: Finish − Matte Tin Finish over Copper Leadframe
• (Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Weight: 0.2mg (Approximate)
Ordering Information (Note 3)
Part Number Case Packaging
BAS116LP3-7 X3-DFN0603-2 10,000/Tape & Reel
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
BA = Product Type Marking Code
Bar Denotes Cathode Side
Top View Bottom View
BA
BAS116LP3
Document number: DS35241 Rev. 5 - 2 2 of 4
www.diodes.com January 2012
© Diodes Incorporated
BAS116LP3
NEW PRODUCT
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR 85 V
RMS Reverse Voltage VR
(
RMS
)
60 V
Forward Continuous Current (Note 4) IFM 215 mA
Repetitive Peak Forward Current IFRM 500 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0
μ
s
@ t = 1.0ms
@ t = 1.0s IFSM 4.0
1.0
0.5 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) PD 250 mW
Thermal Resistance Junction to Ambient Air (Note 4) R
θ
JA 500 °C/W
Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 5) V
(
BR
)
R 85 ⎯ ⎯ V IR = 100μA
Forward Voltage VF ⎯
0.75
0.9
1.0
1.15
0.95
1.10
1.20
1.35
V
IF = 1.0mA
IF = 10mA
IF = 50mA
IF = 150mA
Leakage Current (Note 5) IR ⎯ ⎯ 10.0
100
500 nA VR = 75V
VR = 1V, TJ = 150°C
VR = 75V, TJ = 150°C
Total Capacitance CT ⎯ 1.6 3.0 pF VR = 0, f = 1.0MHz
Reverse Recovery Time trr ⎯ 120 3000 ns IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100Ω
Notes: 4. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.
5. Short duration pulse test used to minimize self-heating effect.
00 25 50 75 100 125 150
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERA TURE (°C)
Fig . 1 Po we r Derati ng C ur ve, Total Pac kage
A
50
100
150
200
250
300
I, I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
WA
R
D
C
U
R
R
E
N
T
(mA)
F
V , INSTANTANEO US FO RWARD VOLTAGE ( V)
Fig. 2 Typi cal For ward C har act er is tics
F
0 0.4 0.8 1.2 1.6
BAS116LP3
Document number: DS35241 Rev. 5 - 2 3 of 4
www.diodes.com January 2012
© Diodes Incorporated
BAS116LP3
NEW PRODUCT
I , INSTAN TANEOUS REVERSE CURRENT (nA)
R
0.1
1
10
100
0102030405060708090100
V , INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 3 T ypical Reverse Characteristics
R
110100
V , DC REVERSE VOL TAGE (V)
Fig. 4 Typical Total Capacitance vs. Reverse Voltage
R
C
,
T
O
T
AL
C
A
P
A
C
I
T
A
N
C
E (pF)
T
0.4
0.8
1.2
1.6
0
2.0
f = 1MHz
Package Outline Dimensions
Bottom View
Suggested Pad Layout
X3-DFN0603-2
Dim Min Max Typ
A 0.27 0.35 0.30
A1 0.00 0.03 0.02
b 0.19 0.29 0.24
D 0.595 0.645 0.62
E 0.295 0.345 0.32
e - - 0.355
L 0.14 0.24 0.19
All Dimensions in mm
Dimensions Value (in mm)
C 0.355
X 0.230
Y 0.300
Z 0.610
Z
Y (2x)
X (2x )
C
L (2x)
Eb (2x)
D
A1 (2x)
A
e
BAS116LP3
Document number: DS35241 Rev. 5 - 2 4 of 4
www.diodes.com January 2012
© Diodes Incorporated
BAS116LP3
NEW PRODUCT
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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