PBSS3540M,315 - NXP - Pdf.Support

DATA SH EET

Product speciﬁcation 2003 Aug 12

DISCRETE SEMICONDUCTORS

PBSS3540M

40 V, 0.5 A

PNP low VCEsat (BISS) transistor

M3D883

BOTTOM VIEW

2003 Aug 12 2

Philips Semiconductors Product speciﬁcation

40 V, 0.5 A

PNP low VCEsat (BISS) transistor PBSS3540M

FEATURES

•Low collector-emitter saturation voltage VCEsat

•High collector current capability IC and ICM

•High efficiency leading to reduced heat generation

•Reduced printed-circuit board requirements.

APPLICATIONS

•Power management:

– DC-DC converter

– Supply line switching

– Battery charger

– LCD backlighting.

•Peripheral driver:

– Driver in low supply voltage applications (e.g. lamps

and LEDs).

– Inductive load drivers (e.g. relays, buzzers and

motors).

DESCRIPTION

Low VCEsat PNP transistor in a SOT883 leadless ultra

small plastic package.

NPN complement: PBSS2540M.

PINNING

PIN DESCRIPTION

1 base

2 emitter

3 collector

handbook, halfpage

MAM469

Bottom view 2

Fig.1 Simplified outline (SOT883) and symbol.

MARKING

TYPE NUMBER MARKING CODE

PBSS3540M DA

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

VCEO collector-emitter voltage −40 V

ICcollector current (DC) −500 mA

ICM peak collector current −1A

CEsat equivalent on-resistance <700 mΩ

2003 Aug 12 3

Philips Semiconductors Product speciﬁcation

40 V, 0.5 A

PNP low VCEsat (BISS) transistor PBSS3540M

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Notes

1. Refer to SOT883 standard mounting conditions.

2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60 µm

copper strip line.

3. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.

THERMAL CHARACTERISTICS

Notes

1. Refer to SOT883 standard mounting conditions.

2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60 µm

copper strip line.

3. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.

4. Operated under pulsed conditions: duty cycle δ≤20%, pulse width tp≤30 ms.

Soldering

Reflow soldering is the only recommended soldering method.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −−40 V

VCEO collector-emitter voltage open base −−40 V

VEBO emitter-base voltage open collector −−6V

Ccollector current (DC) notes 1 and 2 −−500 mA

ICM peak collector current −−1A

BM peak base current −−100 mA

Ptot total power dissipation Tamb ≤25 °C; notes 1 and 2 −250 mW

Tamb ≤25 °C; note 1 and 3 −430 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to

ambient in free air; notes 1 and 2 500 K/W

in free air; notes 1, 3 and 4 290 K/W

2003 Aug 12 4

Philips Semiconductors Product speciﬁcation

40 V, 0.5 A

PNP low VCEsat (BISS) transistor PBSS3540M

CHARACTERISTICS

Tamb =25°C unless otherwise speciﬁed.

Note

1. Pulse test: tp≤300 µs; δ≤0.02.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector-base cut-off current VCB =−30 V; IE=0 −−−100 nA

VCB =−30 V; IE= 0; Tj= 150 °C−−−50 µA

IEBO emitter-base cut-off current VEB =−5 V; IC=0 −−−100 nA

hFE DC current gain VCE =−2 V; IC=−10 mA 200 −−

CE =−2 V; IC=−100 mA; note 1 150 −−

CE =−2 V; IC=−500 mA; note 1 40 −−

CEsat collector-emitter saturation voltage IC=−10 mA; IB=−0.5 mA −−−50 mV

IC=−100 mA; IB=−5mA −−−130 mV

IC=−200 mA; IB=−10 mA −−−200 mV

IC=−500 mA; IB=−50 mA; note 1 −−−350 mV

RCEsat equivalent on-resistance IC=−500 mA; IB=−50 mA; note 1 −440 <700 mΩ

VBEsat base-emitter saturation voltage IC=−500 mA; IB=−50 mA; note 1 −−−1.2 V

VBEon base-emitter turn-on voltage VCE =−2 V; IC=−100 mA; note 1 −−−1.1 V

fTtransition frequency IC=−100 mA; VCE =−5V;

f = 100 MHz 100 300 −MHz

Cccollector capacitance VCB =−10 V; IE=I

e= 0; f = 1 MHz −−10 pF

2003 Aug 12 5

Philips Semiconductors Product speciﬁcation

40 V, 0.5 A

PNP low VCEsat (BISS) transistor PBSS3540M

handbook, halfpage

200

400

600

800

MLE202

hFE

IC (mA)

−1−10 −102

−10−1−103

(1)

(2)

(3)

Fig.2 DC current gain as a function of collector

current; typical values.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

VCE =−2V.

handbook, halfpage

−800

−1200

−400

MLE203

−10−1−1−10 IC (mA)

VBE

(mV)

−102−103

(2)

(1)

(3)

Fig.3 Base-emitter voltage as a function of

collector current; typical values.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

VCE =−2V.

handbook, halfpage

−103

−102

−1

MLE204

−10−1−1−10 IC (mA)

VCEsat

(mV)

−102−103

(1)

(3)

(2)

Fig.4 Collector-emitter saturation voltage as a

function of collector current; typical values.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

IC/IB= 20.

handbook, halfpage

−800

−1200

−400

MLE205

−10−1−1−10 IC (mA)

VBEsat

(mV)

−102−103

(1)

(3)

(2)

Fig.5 Base-emitter saturation voltage as a

function of collector current; typical values.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

IC/IB= 20.

2003 Aug 12 6

Philips Semiconductors Product speciﬁcation

40 V, 0.5 A

PNP low VCEsat (BISS) transistor PBSS3540M

handbook, halfpage

(1)

(mA)

VCE (V)

−1200

−800

−400

0−1−5

−2−3−4

MLE200

(10)

(3)

(5)

(7)

(2)

(4)

(6)

(8)

(9)

Fig.6 Collector current as a function of

collector-emitter voltage; typical values.

(1) IB=−40 mA.

(2) IB=−36 mA.

(3) IB=−32 mA.

(4) IB=−28 mA.

(5) IB=−24 mA.

(6) IB=−20 mA.

(7) IB=−16 mA.

(8) IB=−12 mA.

(9) IB=−8 mA.

(10) IB=−4 mA.

Tamb =25°C.

handbook, halfpage

103

102

10−1

MLE201

−10−1−1−10 IC (mA)

RCEsat

(Ω)

−102−103

(1)

(3)

(2)

Fig.7 Collector-emitter equivalent on-resistance

as a function of collector current; typical

values.

IC/IB= 20.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

2003 Aug 12 7

Philips Semiconductors Product speciﬁcation

40 V, 0.5 A

PNP low VCEsat (BISS) transistor PBSS3540M

PACKAGE OUTLINE

UNIT A1

max.

A(1) bb

eLL

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 0.50

0.46 0.20

0.12 0.55

0.47

0.03 0.62

0.55 0.35 0.65

DIMENSIONS (mm are the original dimensions)

Note

1. Including plating thickness

0.30

0.22

0.30

0.22

SOT883 SC-101 03-02-05

03-04-03

1.02

0.95

0 0.5 1 mm

scale

Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm SOT883

2003 Aug 12 8

Philips Semiconductors Product speciﬁcation

40 V, 0.5 A

PNP low VCEsat (BISS) transistor PBSS3540M

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

LEVEL DATA SHEET

STATUS(1) PRODUCT

STATUS(2)(3) DEFINITION

I Objective data Development This data sheet contains data from the objective speciﬁcation for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

III Product data Production This data sheet contains data from the product speciﬁcation. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Relevant changes will

be communicated via a Customer Product/Process Change Notiﬁcation

(CPCN).

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

attheseoratanyotherconditionsabovethosegiveninthe

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationorwarrantythatsuch applicationswillbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomersusingorselling theseproducts

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes in the products -

including circuits, standard cells, and/or software -

described or contained herein in order to improve design

and/or performance. When the product is in full production

(status ‘Production’), relevant changes will be

communicated via a Customer Product/Process Change

Notification (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these

products, conveys no licence or title under any patent,

makes no representations or warranties that these

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right infringement, unless otherwise specified.

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Printed in The Netherlands 613514/01/pp9 Date of release: 2003 Aug 12 Document order number: 9397 750 11561