1
Transistor
2SC1318A
Silicon NPN epitaxial planer type
For low-frequency driver amplification
Complementary to 2SA0720A (2SA720A)
■Features
●High collector to emitter voltage VCEO.
●Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.
■Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
5.0±0.2 4.0±0.2
5.1±0.213.5±0.5
0.45 +0.2
–0.10.45 +0.2
–0.1
1.27 1.27
2.3±0.2
2.54±0.15
213
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
80
70
5
1
0.5
750
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
■Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
VCBO
VCEO
VEBO
hFE1*1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
VCB = 20V, IE = 0
IC = 10µA, IE = 0
IC = 2mA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 150mA*2
VCE = 10V, IC = 500mA*2
IC = 300mA, IB = 30mA*2
IC = 300mA, IB = 30mA*2
V
CB
= 10V, I
E
= –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
min
80
70
5
85
40
typ
160
100
0.2
0.85
120
11
max
0.1
340
0.6
1.5
20
Unit
µA
V
V
V
V
V
MHz
pF
*1hFE1 Rank classification
Rank Q R S
hFE1 85 ~ 170 120 ~ 240 170 ~ 340
*2 Pulse measurement
Note.) The Part number in the Parenthesis shows conventional part number.
2
Transistor 2SC1318A
PC — Ta IC — VCE IC — IB
VCE(sat) — ICVBE(sat) — IChFE — IC
fT — IECob — VCB ICBO — Ta
0 16040 12080 14020 10060
0
1.2
1.0
0.8
0.6
0.4
0.2
Ambient temperature Ta (˚C)
Collector power dissipation P
C
(W)
0108264
0
1.2
1.0
0.8
0.6
0.4
0.2
I
B
=–10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
Ta=25˚C
Collector to emitter voltage VCE (V)
Collector current IC (A)
0108264
0
1.2
1.0
0.8
0.6
0.4
0.2
VCE=10V
Ta=25˚C
Base current IB (mA)
Collector current I
C
(A)
1 10 100 10003 30 300
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10 IC/IB=10
Ta=75˚C
25˚C
–25˚C
Collector current IC (mA)
Collector to emitter saturation voltage V
CE(sat)
(V)
1 10 100 10003 30 300
0.01
0.03
0.1
0.3
1
3
10
30
100 I
C
/I
B
=10
Ta=–25˚C
25˚C
75˚C
Collector current IC (A)
Base to emitter saturation voltage V
BE(sat)
(V)
1 10 100 10003 30 300
0
300
250
200
150
100
50
VCE=10V
Ta=75˚C
25˚C
–25˚C
Collector current IC (mA)
Forward current transfer ratio h
FE
–1–3–10 –30 –100
0
200
160
120
80
40
180
140
100
60
20
VCB=10V
Ta=25˚C
Emitter current IE (mA)
Transition frequency f
T
(MHz)
1 3 10 30 100
0
50
40
30
20
10
45
35
25
15
5
I
E
=0
f=1MHz
Ta=25˚C
Collector to base voltage VCB (V)
Collector output capacitance Cob (pF)
0 18060 120
1
10
10
2
10
3
10
4
V
CB
=20V
Ambient temperature Ta (˚C)
I
CBO
(Ta)
I
CBO
(Ta=25˚C)
3
Transistor 2SC1318A
ICEO — Ta
0 1406020 80 12040 100
1
10
10
2
10
3
10
5
10
4
V
CE
=10V
Ambient temperature Ta (˚C)
ICEO (Ta)
ICEO (Ta=25˚C)
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2001 MAR
