2
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF510 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 100 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 100 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID5.6 A
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID4A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 20 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD43 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.29 W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS 19 mJ
Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T
STG -55 to 175 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg 300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ= 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA, (Figure 10) 100 - - V
Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2.0 - 4.0 V
Zero-Gate Voltage Drain Current IDSS VDS = 95V, VGS = 0V - - 25 µA
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 150oC - - 250 µA
On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7) 5.6 - - A
Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA
Drain to Source On Resistance (Note 2) rDS(ON) VGS = 10V, ID = 3.4A (Figures 8, 9) - 0.4 0.54 Ω
Forward Transconductance (Note 2) gfs VGS = 50V, ID = 3.4A (Figure 12) 1.3 2.0 - S
Turn-On Delay Time td(ON) ID≈ 5.6A, RGS = 24Ω, VDD = 50V, RL = 9Ω,
VDD = 50V, VGS = 10V
MOSFET switching times are essentially independent
of operating temperature
- 8 12 ns
Rise Time tr-2563ns
Turn-Off Delay Time td(OFF) -157 ns
Fall Time tf-1259ns
Total Gate Charge
(Gate to Source + Gate to Drain) Qg(TOT) VGS = 10V, ID = 5.6A, VDS = 0.8 x Rated BVDSS,
IG(REF) = 1.5mA (Figure 14)
Gate charge is essentially independent of operating
temperature.
- 5.0 30 nC
Gate to Source Charge Qgs - 2.0 - nC
Gate to Drain “Miller” Charge Qgd - 3.0 - nC
Input Capacitance CISS VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) - 135 - pF
Output Capacitance COSS -80- pF
Reverse-Transfer Capacitance CRSS -20- pF
Internal Drain Inductance LDMeasured From the
Contact Screw On Tab To
Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
- 3.5 - nH
Measured From the Drain
Lead, 6mm (0.25in) From
Package to Center of Die
- 4.5 - nH
Internal Source Inductance LSMeasured From The
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad
- 7.5 - nH
Junction to Case RθJC - - 3.5 oC/W
Junction to Ambient RθJA Free air operation - - 80 oC/W
LD
LS
D
S
G
IRF510