SKM200GB12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 C 1200 V Tc = 25 C 314 A Tc = 80 C 242 A 200 A ICnom ICRM SEMITRANS(R)3 IGBT4 Modules ICRM = 3xICnom 600 A -20 ... 20 V 10 s -40 ... 175 C Tc = 25 C 229 A Tc = 80 C 172 A 200 A VGES tpsc VCC = 800 V VGE 15 V VCES 1200 V Tj = 150 C Tj Inverse diode IF SKM200GB12E4 Tj = 175 C IFnom Features * IGBT4 = 4. Generation (Trench)IGBT * VCEsat with positive temperature coefficient * High short circuit capability, self limiting to 6 x ICNOM * Soft switching 4. Generation CAL diode (CAL4) Typical Applications * AC inverter drives * UPS * Electronic welders at fsw up to 20 kHz IFRM IFRM = 3xIFnom 600 A IFSM tp = 10 ms, sin 180, Tj = 25 C 990 A -40 ... 175 C Tj Module It(RMS) Tstg Visol * Case temperature limited to Tc = 125C max, recomm. Top = -40 ... +150C, product rel. results valid for Tj = 150 A C 4000 V Characteristics Symbol Conditions min. typ. max. Unit Tj = 25 C 1.8 2.05 V Tj = 150 C 2.2 2.4 V VCE0 Tj = 25 C 0.8 0.9 V Tj = 150 C 0.7 0.8 V rCE Tj = 25 C 5.0 5.8 m IGBT VCE(sat) Remarks AC sinus 50Hz, t = 1 min 500 -40 ... 125 IC = 200 A VGE = 15 V chiplevel VGE = 15 V Tj = 150 C VGE(th) VGE=VCE, IC = 7.6 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V QG VGE = - 8 V...+ 15 V RGint Tj = 25 C td(on) Eoff VCC = 600 V IC = 200 A VGE = 15 V RG on = 1 RG off = 1 di/dton = 5500 A/s di/dtoff = 2300 A/s Rth(j-c) per IGBT tr Eon td(off) tf Tj = 25 C 5 7.5 8.0 m 5.8 6.5 V 0.1 0.3 mA Tj = 150 C mA f = 1 MHz 12.3 nF f = 1 MHz 0.81 nF f = 1 MHz 0.69 nF 1130 nC 3.8 Tj = 150 C 204 ns Tj = 150 C 40 ns Tj = 150 C 21 mJ Tj = 150 C 490 ns Tj = 150 C 107 ns Tj = 150 C 27 mJ 0.14 K/W GB (c) by SEMIKRON Rev. 2 - 16.06.2009 http://store.iiic.cc/ 1 SKM200GB12E4 Characteristics Symbol SEMITRANS(R)3 rF IRRM Qrr IGBT4 Modules Conditions Inverse diode VF = VEC IF = 200 A VGE = 0 V chip VF0 Err Rth(j-c) min. typ. max. Unit Tj = 25 C 2.2 2.52 V Tj = 150 C 2.15 2.47 V Tj = 25 C 1.3 1.5 V Tj = 150 C 0.9 1.1 V Tj = 25 C 4.5 5.1 m 6.3 6.8 m Tj = 150 C IF = 200 A Tj = 150 C di/dtoff = 4450 A/s T = 150 C j VGE = 15 V T j = 150 C VCC = 600 V per diode 174 A 33 C 13 mJ 0.26 K/W Module SKM200GB12E4 LCE RCC'+EE' Features * IGBT4 = 4. Generation (Trench)IGBT * VCEsat with positive temperature coefficient * High short circuit capability, self limiting to 6 x ICNOM * Soft switching 4. Generation CAL diode (CAL4) 15 terminal-chip Rth(c-s) per module Ms to heat sink M6 Mt 20 nH TC = 25 C 0.25 m TC = 125 C 0.5 m 0.02 to terminals M6 0.038 K/W 3 5 Nm 2.5 5 Nm Nm w 325 g Typical Applications * AC inverter drives * UPS * Electronic welders at fsw up to 20 kHz Remarks * Case temperature limited to Tc = 125C max, recomm. Top = -40 ... +150C, product rel. results valid for Tj = 150 GB 2 Rev. 2 - 16.06.2009 http://store.iiic.cc/ (c) by SEMIKRON SKM200GB12E4 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic (c) by SEMIKRON Rev. 2 - 16.06.2009 http://store.iiic.cc/ 3 SKM200GB12E4 Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance Fig. 10: CAL diode forward characteristic Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge 4 Rev. 2 - 16.06.2009 http://store.iiic.cc/ (c) by SEMIKRON SKM200GB12E4 Semitrans 3 GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. (c) by SEMIKRON Rev. 2 - 16.06.2009 http://store.iiic.cc/ 5