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MMBT2369A — NPN Switching Transistor

MMBT2369A Rev. 1.1.0

November 2014

MMBT2369A

NPN Switching Transistor

Ordering Information

Absolute Maximum Ratings(1),(2)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Notes:

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or

low-duty-cycle operations.

Part Number Marking Package Packing Method

MMBT2369A 1S SOT-23 3L Tape and Reel

Symbol Parameter Value Unit

VCEO Collector-Emitter Voltage 15 V

VCBO Collector- Base Voltage 40 V

VEBO Emitter-Base Voltage 4.5 V

ICCollector Current - Continuous 200 mA

TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

1. Base 2. Emitter 3. Collector

SOT-23

1

2

3

Description

This device is designed for high speed saturated

switching at collector currents of 10 mA to 100 mA.

Sourced from process 21.

MMBT2369A — NPN Switching Transistor

MMBT2369A Rev. 1.1.0 2

Thermal Characteristics(3)

Values are at TA = 25°C unless otherwise noted.

Note:

3. Device is mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Note:

4. Pulse test: Pulse width ≤ 300 μs, duty cycle ≤ 2%

Symbol Parameter Value Unit

PDTotal Device Dissipation 225 mW

Derate Above 25°C 1.8 mW/°C

RqJA Thermal Resistance, Junction-to-Ambient 556 °C/W

Symbol Parameter Conditions Min. Max. Unit

BVCEO Collector-Emitter Breakdown

Voltage(4) IC = 10 mA, IB = 0 15 V

BVCES Collector-Emitter Breakdown Voltage IC = 10 μA, VBE = 0 40 V

BVCBO Collector- Base Breakdown Voltage IC = 10 μA, IE = 0 40 V

BVEBO Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 4.5 V

ICBO Collector Cut-Off Current VCB = 20 V, IE = 0 0.4 μA

VCB = 20 V, IE = 0, TA = 125°C 30

hFE DC Current Gain(4) IC = 10 mA, VCE = 1.0 V 40 120

IC = 10 mA, VCE = 0.35 V, TA = -55°C 20

IC = 100 mA, VCE = 1.0 V 20

VCE(sat) Collector-Emitter Saturation

Voltage(4)

IC = 10 mA, IB = 1.0 mA 0.20

V

IC = 10 mA, IB = 1.0 mA, TA = 125°C 0.30

IC = 30 mA, IB = 3.0 mA 0.25

IC = 100 mA, IB = 10 mA 0.50

VBE(sat) Base-Emitter Saturation Voltage

IC = 10 mA, IB = 1.0 mA 0.70 0.85

V

IC = 10 mA, IB = 1.0 mA, TA = -55°C 1.02

IC = 10 mA, IB = 1.0 mA, TA = 125°C 0.59

IC = 30 mA, IB = 3.0 mA 1.15

IC = 100 mA, IB = 10 mA 1.60

Cobo Output Capacitance VCB = 5.0 V, IE = 0, f = 1.0 MHz 4.0 pF

Cibo Input Capacitance VEB = 0.5 V, IC = 0, f = 1.0 MHz 5.0 pF

hfe Small-Signal Current Gain IC = 10 mA, VCE = 10 V

RG = 2.0 kΩ, f = 100 MHz 5.0

tsSt orage Time IB1 = IB2 = IC = 10 mA 13 ns

ton Turn-On Time VCC = 3.0 V, IC = 10 mA,

IB1 = 3.0 mA 12 ns

toff Turn-Off Time VCC = 3.0 V, IC = 10 mA,

IB1 = 3.0 mA, IB2 = 1.5 mA 18 ns

MMBT2369A — NPN Switching Transistor

MMBT2369A Rev. 1.1.0 3

Typical Performance Characteristics

Figure 1. DC Current Gain

vs. Collector Current Figure 2. Collector-Emitter Saturation Voltag e

vs. Collector Current

Figure 3. Base-Emitter Saturation Voltage

vs. Collector Current Figure 4. Base-Emitter On Voltage

vs. Collector Current

Figure 5. Collector Cut-Off Current vs.

Ambient Temperature Figure 6. Output Capacitance vs.

Reverse Bias Vo ltage

0.01 0.1 1 10 100

50

10 0

15 0

20 0

I - CO LL EC TO R CU RR EN T (m A)

h - DC CURRENT GAIN

FE

C

V = 1.0V

CE

- 40 °C

25 ° C

125 ° C

0.1 1 10 100 500

0

0.1

0.2

0.3

0.4

0.5

I - COLLECTOR CURRENT (mA)

V - COLLECTOR-EMITTER VOLTAGE (V)

CESAT

- 40 °C

25 °C

C

β= 1 0

125 °C

0.1 1 10 100 300

0.4

0.6

0.8

1

1.2

1.4

I - COLLECTOR CURRENT (mA)

V - BASE-EMITTER VOLTAG E (V)

BESAT

C

β= 10

- 40 °C

25 °C

125 °C

0.1 1 10 100

0.2

0.4

0.6

0.8

1

I - COLLECTOR CURRENT (mA)

V - B ASE-E MITTER ON VOLTA GE (V)

BE(O N)

C

V = 1.0V

CE

- 40°C

25 °C

125 °C

25 50 75 100 125 150

1

10

10 0

60 0

T - AMBIENT TEMPERATURE ( C)

I - COLLECTOR CURRENT (nA)

A

V = 20V

CB

°

CBO

0.1 0.5 1 5 10 50

0

1

2

3

4

5

REVERSE BIAS VOLTAGE (V)

CAPACITANCE (pF)

C

ibo

C

obo

F = 1.0MHz

MMBT2369A — NPN Switching Transistor

MMBT2369A Rev. 1.1.0 4

Typical Performance Characteristics (Continued)

Figure 7. Switching Times

vs. Collector Current Figure 8. Switching Times

vs. Ambient Temperature

Figure 9. Storage Time vs.

Turn-On and Turn-Off Base Currents Figure 10. Storage Time vs.

Turn-On and Tu rn-Off Base Currents

Figure 11. Fall Time vs.

Turn-On and Turn-Off Base Currents Figure 12. Fall Time vs.

Turn-On and Tu rn-Off Base Currents

2 5 10 20 50 100 300

1

2

5

10

20

50

100

I - COLLECTOR CURRENT (mA)

SWITCHING TIMES (ns)

I = 10 I = I = 10

V = 3.0 V

CC

C

t

s

t

s

t

f

t

s

t

s

t

s

t

s

t

s

t

d

t

s

t

s

t

r

C B1 B2

25 50 75 100

0

2

4

6

8

10

12

T - AMBIENT TEMPERATURE ( C)

SWITCHING TIMES (ns)

I = 10 mA, I = 3.0 mA, I = 1.5 mA, V = 3.0 V

CC

A°

t

s

t

s

t

f

t

s

t

s

t

s

t

s

t

s

t

d

t

s

t

s

t

r

C B1 B2

0246810

-12

-10

-8

-6

-4

-2

0

I - TURN ON BASE CURRENT (mA)

I - TURN OFF BASE CURRENT (mA)

6.0 ns

4.0 ns

I = 10 mA

C

V = 3.0 V

CC

t = 3.0 ns

s

B1

B2

0 5 10 15 20 25 30

-30

-25

-20

-15

-10

-5

0

I - TURN ON BASE CURRENT (mA)

I - TURN OFF BASE CURRENT (mA)

I = 100 mA

C

V = 3.0 V

CC

t = 3.0 ns

4.0 ns

6.0 ns

8.0 ns

16.0 ns

B1

B2

S

0246810

-6

-5

-4

-3

-2

-1

0

I - TURN ON BASE CURRENT (mA)

I - TURN OFF BASE CURRENT (mA)

I = 10 mA

C

V = 3.0 V

CC

t = 7.0 ns

f

8.0 ns

10 ns

B1

B2

024681012

-12

-10

-8

-6

-4

-2

0

I - TURN ON BASE CURRENT (mA)

I - TURN OFF BASE CURRENT (mA)

B1

B2

I = 30 mA

C

V = 3.0 V

CC

t = 2.0 ns

5.0 ns

4.0 ns

3.0 ns

f

MMBT2369A — NPN Switching Transistor

MMBT2369A Rev. 1.1.0 5

Typical Performance Characteristics (Continued)

Figure 13. Fall Time vs.

Turn-On and Turn-Off Base Currents Figure 14. Delay Time vs. Base-Emitter Off Voltage

and Turn-On Base Current

Figure 15. Rise Time vs. Turn-On Base Current and

Collector Current Figure 16. Power Dissipation vs.

Ambient Temperature

0 5 10 15 20 25 30

-30

-25

-20

-15

-10

-5

0

I - TURN ON BASE CURRENT (mA)

I - TURN OFF BASE CURRENT (mA)

B1

B2

I = 100 mA

C

V = 3.0 V

CC

t = 2.0 ns

f 8.0 ns

4.0 ns

3.0 ns

12.0 ns

12 51020 50

-6

-5

-4

-3

-2

-1

0

I - TURN ON BASE CURRENT (mA)

V - BASE-EMITTER OFF VOLTAGE (V)

B1

BE(O)

I = 10 mA

C

V = 3.0 V

CC

t = 8.0 ns

d

4.0 ns

5.0 ns

3.0 ns

1 10 100 500

0

1

10

50

I - COLLECTOR CURRENT (mA)

I - TURN ON BASE CURRENT (mA)

C

B1

V = 3.0 V

CC

t = 2.0 ns

r

5.0 ns

10 ns 20 ns

0255075100125150

0

10 0

20 0

30 0

40 0

50 0

TEMPERATURE ( C)

P - POW ER D ISSIPATION (m W)

°

D

SOT-23

TO-92

MMBT2369A — NPN Switching Transistor

MMBT2369A Rev. 1.1.0 6

Physical Dimensions

Figure 17. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE

LAND PATTERN

RECOMMENDATION

NOTES: UNLESS OTHERWISE SPECIFIED

A) REFERENCE JEDEC REGISTRATION

TO-236, VARIATION AB, ISSUE H.

B) ALL DIMENSIONS ARE IN MILLIMETERS.

C) DIMENSIONS ARE INCLUSIVE OF BURRS,

MOLD FLASH AND TIE BAR EXTRUSIONS.

D) DIMENSIONING AND TOLERANCING PER

ASME Y14.5M - 1994.

E) DRAWING FILE NAME: MA03DREV10

3

12

SEE DETAIL A

SEATING

PLANE

SCALE: 2X

GAGE PLANE

(0.55)

(0.93)

1.20 MAX

C

0.10

0.00

0.10 C

2.40±0.30

2.92±0.20

1.30+0.20

-0.15

0.60

0.37

0.20 A B

1.90

0.95

(0.29)

0.95

1.40

2.20

1.00

1.90

0.25

0.23

0.08

0.20 MIN

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