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Is Now Part of
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of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
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arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
MJE210
PNP Epitaxial Si licon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage - 40 V
VCEO Collector-Emitter Voltage - 25 V
VEBO Emitter-Base Voltage - 8 V
IC Collector Current - 5 A
PC Collector Dissipation (TC=25°C) 15 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parame ter Test Condit ion Min. Max. U nits
BVCEO Collector-Emitter Breakdown Voltage IC = - 10mA, IB = 0 -25 V
ICBO Collector Cut-of f Current VCB = -40V, IE = 0
VCB = - 4 0V, IE =0 @ TJ = 125°C-100
-100 nA
µA
IEBO Emitter Cut-off Current VBE = - 8V, IC = 0 -100 nA
hFE1
hFE2
hFE3
DC Current Gain VCE = - 1V, IC = - 500mA
VCE = - 1 V, IC = - 2A
VCE = - 2 V, IC = - 5A
70
45
10 180
VCE(sat) Collector-Emitter Saturation Voltage IC = - 500mA, IB = - 50mA
IC = - 2A, IC = - 200mA
IC = - 5A, IB = - 1A
-0.3
-0.75
-1.8
V
V
V
VBE(sat) Base-Emitter Satura tion Voltage IC = - 5A, IB = - 1A -2.5 V
VBE(on) Base-Emitter ON Volt age VCE = - 1V, IC = - 2A -1.6 V
fT Current Gain Bandwidth Product VCE = - 10V, IC = - 100mA 65 MHz
Cob Output Capacitance VCB = - 10V, IE = 0, f = 1MHz 120 pF
MJE210
Feature
• Low Collector-Emitter Saturation Voltage
• High Current Gain Bandwidth Product : fT=65MHz@IC= -100mA (Min.)
• Complement to MJE200
1TO-126
1. Emitter 2.Collector 3.Base
©2001 Fairchild Semiconductor Corporation
MJE210
Rev. A1, February 2001
Typical Characteristics
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 3. Collector Output Capacitance Figure 4. Safe Operating Area
Figure 5. Power Derating
-0.01 -0.1 -1 -10
1
10
100
1000
VCE = -1V
VCE = -2V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-0.01 -0.1 -1 -10
-0.01
-0.1
-1
-10 IC = 10 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
-0.1 -1 -10 -100
-1
-10
-100
-1000 f=0.1MHZ
IE=0
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR BASE VOLTAGE
-1 -10 -100
-0.1
-1
-10
-100
100µs
500µs
5ms
1ms
DC
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
3
6
9
12
15
18
21
24
PC[W], POWER DIS SIPATION
TC[oC], CASE TEMPERATURE
Package Demensions
©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
MJE210
Dimensions in Millimeters
3.25 ±0.20
8.00 ±0.30
ø3.20 ±0.10
0.75 ±0.10
#1
0.75 ±0.10
2.28TYP
[2.28±0.20] 2.28TYP
[2.28±0.20]
1.60 ±0.10
11.00 ±0.20
3.90 ±0.10
14.20MAX
16.10 ±0.20
13.06 ±0.30
1.75 ±0.20
(0.50)
(1.00)
0.50 +0.10
–0.05
TO-126
©2001 Fairchild Semiconductor Corporation Rev. G
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