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IXYS reserves the right to change limits, test conditions and dimensions.
VUO 110
20080227a
IdAV = 127 A
VRRM = 800-1800 V
Symbol Test Conditions Maximum Ratings
IdAV TC = 90°C, module 127 A
IdAV TA = 35°C (RthCA = 0.2 K/W), module 118 A
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 1200 A
VR = 0 t = 8.3 ms (60 Hz), sine 1300 A
TVJ = TVJM t = 10 ms (50 Hz), sine 1000 A
VR = 0 t = 8.3 ms (60 Hz), sine 1100 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 7200 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 7200 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 5000 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 5000 A2s
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS t = 1 min 2500 V~
IISOL ≤ 1 mA t = 1 s 3000 V~
MdMounting torque (M6) 5 ± 15 % Nm
Terminal connection torque (M6) 5 ± 15 % Nm
Weight typ. 270 g
Dimensions in mm (1 mm = 0.0394")
Features
●Package with screw terminals
●Isolation voltage 3000 V~
●Planar passivated chips
●Blocking voltage up to 1800 V
●Low forward voltage drop
●UL registered E72873
Applications
●Supplies for DC power equipment
●Input rectifiers for PWM inverter
●Battery DC power supplies
●Field supply for DC motors
Advantages
●Easy to mount with two screws
●Space and weight savings
●Improved temperature and power
cycling
VRSM VRRM Type
VV
800 800 VUO 110-08NO7
1200 1200 VUO 110-12NO7
1400 1400 VUO 110-14NO7
1600 1600 VUO 110-16NO7
1800 1800 VUO 110-18NO7*
* delivery time on request
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
Symbol Test Conditions Characteristic Values
IRVR = VRRM;T
VJ = 25°C ≤0.3 mA
VR = VRRM;T
VJ = TVJM ≤5mA
VFIF= 300 A; TVJ = 25°C ≤1.9 V
VT0 For power-loss calculations only 0.8 V
rT4mΩ
RthJC per diode 0.9 K/W
per module 0.15 K/W
RthJH per diode 1.08 K/W
per module 0.18 K/W
dSCreeping distance on surface 10 mm
dACreepage distance in air 9.4 mm
aMax. allowable acceleration 50 m/s2
Three Phase
Rectifier Bridge
~
~
~
–
+
M
6
x
1
2
7
330
27
6.5
6.5
C~ D~ E~
A+ B-
54
15
12 25
66
26 26
72
80
94
4
5
6
3
1
2
7
M6
~
~
~
+-
Preliminary data
