Document No. E0188E40 (Ver.4.0)
Date Published June 2002 (K) Japan © Elpida Memory, Inc. 2001-2002
Mobile RAM
http://www.elpida.com
Description
Elpida Memory has unveiled a new family of synchronous DRAM, “Mobile RAM”.
Mobile RAM achieves low power consumption via three special low power functions, and extends the battery
life in mobile applications. Additional advantages of Mobile RAM are that it saves space in the system by the
adoption of a 54-ball FBGA (Fine-pitch Ball Grid Array) package, and that it offers a high-speed data transfer
rate using pipeline architecture.
Mobile RAM contributes to a better environment by adopting lead-free solder balls.
Suitable Applications
• Mobile cellular handset
• PDA, wireles s PDA
• Handheld PC
• Digital still camera
• Digital camcorder
and more…
Pin Configuration (54-ball FBGA)
123456 879
A
B
C
D
E
F
G
H
J
VSS
UDQM
DQ1
VSS
VDD
VDD
VDDVSS
VSSQ
VSSQ
VSSQ
VSSQ
VDDQ
VDDQ
VDDQ
VDDQ
DQ14
DQ12
DQ7
DQ15
DQ6
DQ13 DQ2
DQ5
DQ11
DQ10
DQ3
DQ9
DQ4
DQ8
DQ0
A0 A1
A2A3A4A5
A6A7A8
A9
A10
A11
NC
NC
CLK CKE
LDQM
/CAS /RAS /WE
BA0 BA1 /CS
8.0mm
8.0mm
A0 to A11 : Address inputs
BA0, BA1 : Bank select
DQ0 to DQ15 : Data inputs/outputs
CLK : Clock input
CKE : Clock enable
/CS : Chip select
/RAS : Row address strobe
/CAS : Column address strobe
/WE : Write enable
UDQM : Upper DQ mask enable
LDQM : Lower DQ mask enable
VDD : Supply voltage
VSS : Ground
VDDQ : Supply voltage for DQ
VSSQ : Ground for DQ
NC : No connect
Top View
Product Lineup and Production Status
Density
(bits) Organization
(words × bits × banks)
Self
Refresh
Current
(
µ
A (MAX.))
Supply
Voltage
(V)
Supply
Voltage
for DQ
(V)
Maximum
Clock
Frequency
(MHz)
Part Number Sample
Status
2.5 ± 0.2 1.8 ± 0.15 1 33 EDL1216AASA -75-E
128M 2M × 16 × 4 350 2.5 ± 0.2 2.5 ± 0.2 133 EDL1216BASA-75-E
1.8 ± 0.15 1.8 ± 0.15 100 EDL1216CASA-75-E
Now
available
Document No. E0188E40 (Ver.4.0) The information in this document is subject to change without notice.
Features
1. Low Power-Supply Voltage:
Mobile RAM Standard SDRAM
Supply Voltage (VDD) 2.5V ± 0.2V 1.8V ± 0.15V 3.3V
Input/output Voltage (VDDQ) 1.8V ± 0.15V 2.5V ± 0.2V 1.8V ± 0.15V 3.3V
2. Low Power Operation:
2-1. Normal self refresh current
Mobile RAM Standard SDRAM
Self Refresh Current (IDD6) (MAX.) 350
µ
A 2,000
µ
A
2-2. Mobile RAM-specific function for low power consumption
• Partial Array Self Refresh:
Refreshes only a certain portion of the memory cell array to reduce the self-refresh current.
• Temperature Compensated Self Refresh:
Adjusts the refresh frequency in response to changes in temperature to reduce the self-refresh current.
• Deep Power Down:
Cuts internal voltage supply to achieve maximum power reduction.
3. High-Speed Operation:
• 100MHz at CAS Latency 3 (CL = 3) (VDD = 1.8V)
• 133MHz at CAS Latency 3 (CL = 3) (VDD = 2.5V)
4. Wide Temperature Range:
Mobile RAM Standard SDRAM
Operating Temperature -25 to +85 °C 0 to 70 °C
5. Organization: 16-b i t organization
6. Small Package:
54-ball FBGA (Fine-pitch Ball Grid Array) 8.0mm × 8.0mm × 1.0mm, 0.8mm ball pitch
7. Lead Free (Su − Ag − Cu)
8. Fully compatible with JEDEC Low Power SDRAM
