Mobile RAM http://www.elpida.com Description Elpida Memory has unveiled a new family of synchronous DRAM, "Mobile RAM". Mobile RAM achieves low power consumption via three special low power functions, and extends the battery life in mobile applications. Additional advantages of Mobile RAM are that it saves space in the system by the adoption of a 54-ball FBGA (Fine-pitch Ball Grid Array) package, and that it offers a high-speed data transfer rate using pipeline architecture. Mobile RAM contributes to a better environment by adopting lead-free solder balls. Pin Configuration (54-ball FBGA) Top View * Mobile cellular handset * PDA, wireless PDA * Handheld PC 1 2 3 4 5 6 7 8 9 A DQ15 VSSQ VDDQ DQ0 VDD DQ14 DQ13 VDDQ VSSQ DQ2 DQ1 DQ12 DQ11 VSSQ VDDQ DQ4 DQ3 DQ10 DQ9 VDDQ VSSQ DQ6 DQ5 VSS B * Digital still camera C * Digital camcorder D E DQ8 and more... NC VSS VDD LDQM DQ7 CKE /CAS /RAS /WE F UDQM CLK G NC A11 A9 BA0 BA1 /CS A8 A7 A6 A0 A1 A10 VSS A5 A4 A3 A2 VDD H J 8.0mm Suitable Applications A0 to A11 : Address inputs BA0, BA1 : Bank select DQ0 to DQ15 : Data inputs/outputs CLK : Clock input CKE : Clock enable /CS : Chip select /RAS : Row address strobe /CAS : Column address strobe /WE : Write enable UDQM : Upper DQ mask enable LDQM : Lower DQ mask enable VDD : Supply voltage VSS : Ground VDDQ : Supply voltage for DQ VSSQ : Ground for DQ NC : No connect 8.0mm Product Lineup and Production Status Density Organization (bits) (words x bits x banks) 128M 2M x 16 x 4 Document No. E0188E40 (Ver.4.0) Date Published June 2002 (K) Japan Self Refresh Current (A (MAX.)) 350 Supply Voltage (V) Supply Voltage for DQ (V) Maximum Clock Frequency (MHz) Part Number 2.5 0.2 1.8 0.15 133 EDL1216AASA-75-E 2.5 0.2 2.5 0.2 133 EDL1216BASA-75-E 1.8 0.15 1.8 0.15 100 EDL1216CASA-75-E Sample Status Now available (c) Elpida Memory, Inc. 2001-2002 Features 1. Low Power-Supply Voltage: Mobile RAM 2.5V 0.2V Supply Voltage (VDD) Input/output Voltage (VDDQ) 1.8V 0.15V 2.5V 0.2V Standard SDRAM 1.8V 0.15V 3.3V 1.8V 0.15V 3.3V 2. Low Power Operation: 2-1. Normal self refresh current Mobile RAM Standard SDRAM 350A 2,000A Self Refresh Current (IDD6) (MAX.) 2-2. Mobile RAM-specific function for low power consumption * Partial Array Self Refresh: Refreshes only a certain portion of the memory cell array to reduce the self-refresh current. * Temperature Compensated Self Refresh: Adjusts the refresh frequency in response to changes in temperature to reduce the self-refresh current. * Deep Power Down: Cuts internal voltage supply to achieve maximum power reduction. 3. High-Speed Operation: * 100MHz at CAS Latency 3 (CL = 3) (VDD = 1.8V) * 133MHz at CAS Latency 3 (CL = 3) (VDD = 2.5V) 4. Wide Temperature Range: Operating Temperature Mobile RAM Standard SDRAM -25 to +85 C 0 to 70 C 5. Organization: 16-bit organization 6. Small Package: 54-ball FBGA (Fine-pitch Ball Grid Array) 8.0mm x 8.0mm x 1.0mm, 0.8mm ball pitch 7. Lead Free (Su - Ag - Cu) 8. Fully compatible with JEDEC Low Power SDRAM Document No. E0188E40 (Ver.4.0) The information in this document is subject to change without notice.