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2Revision: 19-Jun-08
10TTS08S High Voltage Series
Vishay High Power Products Surface Mountable
Phase Control SCR, 10 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current IT(AV) TC = 112 °C, 180° conduction half sine wave 6.5
A
Maximum RMS on-state current IT(RMS) 10
Maximum peak, one-cycle,
non-repetitive surge current ITSM
10 ms sine pulse, rated VRRM applied, TJ = 125 °C 120
10 ms sine pulse, no voltage reapplied, TJ = 125 °C 140
Maximum I2t for fusing I2t10 ms sine pulse, rated VRRM applied, TJ = 125 °C 72 A2s
10 ms sine pulse, no voltage reapplied, TJ = 125 °C 100
Maximum I2√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied, TJ = 125 °C 1000 A2√s
Maximum on-state voltage drop VTM 6.5 A, TJ = 25 °C 1.15 V
On-state slope resistance rtTJ = 125 °C 17.3 mΩ
Threshold voltage VT(TO) 0.85 V
Maximum reverse and direct leakage current IRM/IDM
TJ = 25 °C VR = Rated VRRM/VDRM
0.05
mA
TJ = 125 °C 1.0
Typical holding current IHAnode supply = 6 V, resistive load, initial IT = 1 A 30
Maximum latching current ILAnode supply = 6 V, resistive load 50
Maximum rate of rise of off-state voltage dV/dt TJ = 25 °C 150 V/µs
Maximum rate of rise of turned-on current dI/dt 100 A/µs
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM 8.0 W
Maximum average gate power PG(AV) 2.0
Maximum peak positive gate current +IGM 1.5 A
Maximum peak negative gate voltage -VGM 10 V
Maximum required DC gate current to trigger IGT
Anode supply = 6 V, resistive load, TJ = - 65 °C 20
mAAnode supply = 6 V, resistive load, TJ = 25 °C 15
Anode supply = 6 V, resistive load, TJ = 125 °C 10
Maximum required DC gate
voltage to trigger VGT
Anode supply = 6 V, resistive load, TJ = - 65 °C 1.2
V
Anode supply = 6 V, resistive load, TJ = 25 °C 1
Anode supply = 6 V, resistive load, TJ = 125 °C 0.7
Maximum DC gate voltage not to trigger VGD TJ = 125 °C, VDRM = Rated value 0.2
Maximum DC gate current not to trigger IGD 0.1 mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical turn-on time tgt TJ = 25 °C 0.8
µsTypical reverse recovery time trr TJ = 125 °C 3
Typical turn-off time tq100