SSM3K15FV - Toshiba - Pdf.Support

SSM3K15FV

2007-11-01

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K15FV

High Speed Switching Applications

Analog Switch Applications

• Optimum for high-density mounting in small packages

• Low on-resistance

: RDS(ON) = 4.0 Ω (max) (@VGS = 4 V)

: RDS(ON) = 7.0 Ω (max) (@VGS = 2.5 V)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain-source voltage VDS 30 V

Gate-source voltage VGSS ±20 V

DC ID 100

Drain current Pulse IDP 200 mA

Power dissipation PD (Note 1) 150 mW

Channel temperature Tch 150 °C

Storage temperature Tstg −55 to 150 °C

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Note 1: Total rating, mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm)

Marking Equivalent Circuit

Handling Precaution

When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment

is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other

objects that come into direct contact with devices should be made of anti-static materials.

Unit: mm

JEDEC -

JEITA -

TOSHIBA 2-1L1B

Weight: 1.5 mg (typ.)

1. Gate

2. Source

3. Drain

VESM

1.2±0.05

0.32±0.05

0.40.4

0.22±0.05

0.8±0.05

1.2±0.05

0.5±0.05

0.13±0.05

0.5mm

0.45mm

0.4mm

D P

1 2

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SSM3K15FV

2007-11-01

Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS V

GS = ±16 V, VDS = 0 ⎯ ⎯ ±1 μA

Drain-source breakdown voltage V (BR) DSS ID = 0.1 mA, VGS = 0 30 ⎯ ⎯ V

Drain cut-off current IDSS V

DS = 30 V, VGS = 0 ⎯ ⎯ 1 μA

Gate threshold voltage Vth V

DS = 3 V, ID = 0.1 mA 0.8 ⎯ 1.5 V

Forward transfer admittance ⏐Yfs⏐ V

DS = 3 V, ID = 10 mA 25 ⎯ ⎯ mS

ID = 10 mA, VGS = 4 V ⎯ 2.2 4.0

Drain-source on-resistance RDS (ON)

ID = 10 mA, VGS = 2.5 V ⎯ 4.0 7.0

Input capacitance Ciss V

DS = 3 V, VGS = 0, f = 1 MHz ⎯ 7.8 ⎯ pF

Reverse transfer capacitance Crss V

DS = 3 V, VGS = 0, f = 1 MHz ⎯ 3.6 ⎯ pF

Output capacitance Coss V

DS = 3 V, VGS = 0, f = 1 MHz ⎯ 8.8 ⎯ pF

Turn-on time ton ⎯ 50 ⎯

Switching time

Turn-off time toff

VDD = 5 V, ID = 10 mA,

VGS = 0~5 V ⎯ 180 ⎯ ns

Switching Time Test Circuit

(a) Test circuit (b) VIN

Precaution

Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 100 μA for

this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower

voltage than Vth.

(The relationship can be established as follows: VGS (off) < Vth < VGS (on) )

Please take this into consideration when using the device.

ton

90%

10%

0 V

5 V

90%

10%

toff

tr tf

VDD

VDS

(

)

VDD = 5 V

Duty

Input: tr, tf < 5 ns

(Zout = 50 Ω)

Common Source

Ta = 25°C

VDD

Output

Input

5 V

10 μs

50 Ω

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SSM3K15FV

2007-11-01

Drain-source on resistance

RDS (ON) (Ω)

Drain-source on resistance

RDS (ON) (Ω)

Drain-source voltage VDS (V)

ID – VDS

Drain current ID (mA)

Gate-source voltage VGS (V)

ID – VGS

Drain current ID (mA)

RDS (ON) – ID

Drain-source on resistance

RDS (ON) (Ω)

Gate-source voltage VGS (V)

RDS (ON) – VGS

Ambient temperature Ta (°C)

RDS (ON) – Ta

Ambient temperature Ta (°C)

Vth – Ta

Gate threshold voltage Vth (V)

−25

0.4

50 150125 0

0.2

1.2

1.6

Common Source

ID = 0.1 mA

VDS = 3 V

0.8

1.8

25 100

0.6

1.4

100

250

121.5 0.5

150

200

VGS = 2.1 V

2.3

2.5

2.7

Common Source

Ta = 25°C

3 4 10

4108 2

25°C

Ta = 100°C

−25°C

Common Source

ID = 10 mA

−25

50 150125 0

4 V

VGS = 2.5 V

Common Source

ID = 10 mA

25 100

0.01

1000

243 1

0.1

100

Ta = 100°C

Common Source

VDS = 3 V

−25°C

25°C

4 V

VGS = 2.5 V

80 200160 40

120

Common Source

Ta = 25°C

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SSM3K15FV

2007-11-01

Capacitance C (pF)

Switching time t (ns)

Drain current ID (mA)

⎪Yfs⎪ – ID

Forward transfer admittance

⏐Yfs⏐ (mS)

Drain-source voltage VDS (V)

IDR – VDS

Drain reveres current IDR (mA)

Drain current ID (mA)

t – ID

Switching time t (ns)

Drain current ID (mA)

t – ID

Drain-source voltage VDS (V)

C – VDS

Ambient temperature Ta (°C)

PD – Ta

1000

100

100010 100

300

500 Common Source

VDS = 3 V

Ta = 25°C

0.1

100

300

10000

1000

1001 10

500

3000

5000

Common Source

VDD = 5 V

VGS = 0~5 V

Ta = 25°C

ton

toff

0.1

100

300

10000

1000

1001 10

500

3000

5000

Common Source

VDD = 3 V

VGS = 0~2.5 V

Ta = 25°C

ton

toff

0.1

100

1001 10

0.3

0.5

Common Source

VGS = 0 V

f = 1 MHz

Ta = 25°C

Crss

Coss

Ciss

100

250

150

200

0−1.4−0.4−0.2 −0.6 −0.8 −1 −1.2

Common Source

VGS = 0 V

Ta = 25°C

IDR

Power dissipation PD (mW)

100

250

16040

150

200

20 60 80 100 140 120

Mounted on FR4 board

(25.4 mm × 25.4 mm × 1.6 mm,

Cu Pad: 0.585 mm2 )

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SSM3K15FV

2007-11-01

RESTRICTIONS ON PRODUCT USE

• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information

in this document, and related hardware, software and systems (collectively “Product”) without notice.

• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with

TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.

• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are

responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and

systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily

injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the

Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of

all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes

for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the

instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their

own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such

design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,

diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating

parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR

APPLICATIONS.

• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring

equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.

Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or

reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious

public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used

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power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this

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including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of

noncompliance with applicable laws and regulations.

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