TPCF8304
2004-11-18
1
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS IV)
TPCF8304
Notebook PC Applications
Portable Equipment Applications
• Low drain-source ON resistance: RDS (ON) = 60 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 5.9 S (typ.)
• Low leakage current: IDSS = −10 µA (max) (VDS = −30 V)
• Enhancement model: Vth = −0.8 to −2.0 V,
(VDS = −10 V, ID = −1 mA)
Maximum Ra tings (Ta = 25°C)
Characteristic Symbol Rating Unit
Drain-source voltage VDSS -30 V
Drain-gate voltage (RGS = 20 kΩ) VDGR -30 V
Gate-source voltage VGSS ±20 V
DC (Note 1) ID -3.2
Drain current
Pulse (Note 1) IDP -12.8
A
Single-device operation
(Note 3a)
PD (1) 1.35
Drain power
dissipation
(t = 5 s) (Note 2a) Single-device value at
dual operation (Note 3b) PD (2) 1.12
Single-device operation
(Note 3a)
PD (1) 0.53
Drain power
dissipation
(t = 5 s) (Note 2b) Single-device value at
dual operation (Note 3b) PD (2) 0.33
W
Single-pulse avalanche energy (Note 4) EAS 0.67 mJ
Avalanche current IAR -1.6 A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
EAR 0.11 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg -55~150 °C
For Notes 1 to 6, see the next page.
Caution: This transistor is an electrostatic-sensitive device. Handle with
care.
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-3U1B
Weight: 0.011 g (typ.)
Circuit Co nfig ur ation
1 2 3 4
8 7 6 5
TPCF8304
2004-11-18
2
Thermal Characteristics
Characteristic Symbol Max Unit
Single-device operation
(Note 3a) Rth (ch-a) (1) 92.6
Thermal resistance,
channel to ambient
(t = 5 s) (Note 2a) Single-device value at
dual operation (Note 3b) Rth (ch-a) (2) 111.6
°C/W
Single-device operation
(Note 3a) Rth (ch-a) (1) 235.8
Thermal resistance,
channel to ambient
(t = 5 s) (Note 2b) Single-device value at
dual operation (Note 3b) Rth (ch-a) (2) 378.8
°C/W
Marking (Note 6)
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
Note 3: a) The power dissipation and thermal resistance values shown are for a single device.
(During single-device operation, power is applied to one device only.)
b) The power dissipation and thermal resistance values shown are for a single device.
(During dual operation, power is evenly applied to both devices.)
Note 4: VDD = -24 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = -1.6 A
Note 5: Repetitive rating; pulse width limited by max channel temperature
Note 6: ● to the lower left of the Part No. marking indicates Pin 1.
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
25.4
25.4
Part No.
(or abbreviation code) F5D
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Lot code (month) Lot No.
Pin #1 Lot code
(year)
Product-specific code
TPCF8304
2004-11-18
3
Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ±16 V, VDS = 0 V ― ― ±10 µA
Drain cut-off current IDSS V
DS = -30 V, VGS = 0 V ― ― -10 µA
V (BR) DSS ID = -10 mA, VGS = 0 V -30 ― ―
Drain-source breakdown voltage
V (BR) DSX ID = -10 mA, VGS = 20 V -15 ― ―
V
Gate threshold voltage Vth V
DS = -10 V, ID = -1 mA -0.5 ― -1.2 V
RDS (ON) V
GS = -4.5 V, ID = -1.6 A ― 80 105
Drain-source ON resistance
RDS (ON) V
GS = -10 V, ID = -1.6 A ― 60 72
mΩ
Forward transfer admittance |Yfs| VDS = -10 V, ID = -1.6 A 2.9 5.9 ― S
Input capacitance Ciss ― 600 ―
Reverse transfer capacitance Crss ― 60 ―
Output capacitance Coss
VDS = -10 V, VGS = 0 V, f = 1 MHz
― 70 ―
pF
Rise time tr ― 5.3 ―
Turn-on time ton ― 12 ―
Fall time tf ― 8.4 ―
Switching time
Turn-off time toff
Duty
<
=
1%, tw = 10 µs ― 34 ―
ns
Total gate charge
(gate-source plus gate-drain) Qg ― 14 ―
Gate-source charge 1 Qgs1 ― 1.4 ―
Gate-drain (“Miller”) charge Qgd
VDD
∼
−
-24 V, VGS = -10 V,
ID = -3.2 A
― 2.7 ―
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Drain reverse current Pulse (Note 1) IDRP ― ― ― -12.8 A
Forward voltage (diode) VDSF IDR = -3.2 A, VGS = 0 V ― ― 1.2 V
RL = 9.38 Ω
VDD
∼
−
-15 V
-10 V
VGS 0 V
4.7 Ω
ID = -1.6 A
VOUT
TPCF8304
2004-11-18
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Drain current ID (A)
RDS (ON) – ID
Drain-source ON resistance
RDS (ON) (mΩ)
Gate-source voltage VGS (V)
ID – VGS
Drain current ID (A)
Drain-source voltage VDS (V)
Gate-source voltage VGS (V)
VDS – VGS
Drain-source voltage VDS (V)
ID – VDS
Drain current ID (A)
Drain-source voltage VDS (V)
ID – VDS
Drain current ID (A)
Drain current ID (A)
⎪Yfs⎪ – ID
Forward transfer admittance
⎪Yfs⎪ (S)
10
0.1 -1 -10
100
1000
-5
-4
-2
-1
0
-3
Common source
Ta = 25°C
Pulse test
VGS = -2.3
-2.5
-2.6
-3.0
-2.8
-3.5
-2.7
-10
-6
-4.5
0 -0.2 -0.4 -0.6 -0.8 -1.0
VGS = -2.3 V
Common source
Ta = 25°C
Pulse test
-2.6
-3.5
-3.0
-10
-2.5
-6
-2.7
-2.8
-4.5
-10
-8
-4
-2
0
-6
0-1 -2 -3 -4
-5
Ta = −55°C
25
100
Common source
VDS = -10 V
Pulse test
0 -1 -2 -3
0
-5
-4
-8
-6
-4
-2
ID = -3.2A
Common source
Ta = 25℃
Pulse test
-1.6
-0.8
0-2 -4 -6 -8 -10
0
-1.6
-1.2
-0.8
-0.4
-2.0
25
100
Ta = −55°C
Common source
VDS = -10 V
Pulse test
-0.1 -0.3 -1 -3 -10
1
10
100
VGS
=
-4.5 V
-10
Common source
Ta = 25°C
Pulse test
TPCF8304
2004-11-18
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Drain-source voltage VDS (V)
Capacitance – VDS
Capacitance C (pF)
-0.1
10
100
1000
-1 -3 -5 -10
-30 -50 -100
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Ciss
Coss
Crss
Ambient temperature Ta (°C)
RDS (ON) – Ta
Drain-source ON resistance
RDS (ON) (mΩ)
Drain-source voltage VDS (V)
IDR – VDS
Drain reverse current IDR (A)
Gate threshold voltage Vth (V)
Ambient temperature Ta (°C)
Vth – Ta
0
-0.5
-1.0
-1.5
-2.0
−80 −40 0 40 80 120 160
Common source
VDS = -10 V
ID = -1mA
Pulse test
Drain power dissipation PD (W)
Ambient temperature Ta (°C)
PD – Ta
0
0.1
Common source
Ta = 25°C
Pulse test
0.3
0.3
0.5
1
3
5
10
0.9 1.2
VGS = 0 V
-5.0
-3.0 -1.0
-10
0.6 1.5
2.0
0.8
0
0 40 80 120 160
0.4
1.2
1.6
200
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
ｔ＝5s
(1)
(2)
(3)
(4)
Gate-source voltage VGS (V)
Total gate charge Qg (nC)
Dynamic input/output
characteristics
Drain-source voltage VDS (V)
0 4 8
Common
source
ID = -3.2 A
Ta = 25°C
Pulse test
VDD = -24V
VDS
VGS
12 16
-25
-10
0
-15
-20
-15
-10
0
-12
-6
-24 -12
VDD = -6V
-5
-5
-30
160 −40 0 40 80 120 −80
150
120
60
30
0
90
VGS = -10V
VGS = -4.5V
ID = -0.8A, -1.6A, -3.2A
ID = -0.8A, -1.6A, -3.2A
Common source
Pulse test
TPCF8304
2004-11-18
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rth – tw
Pulse width tw (s)
Transient thermal impedance
r
th (℃/W)
Drain-source voltage VDS (V)
Safe operating area
Drain current ID (A)
1
0.001
10
100
1000
0.01 0.1 1 10 100 1000
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Sin gle-de vice val ue at du al operati on (Not e 3b)
Devi ce mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Sin gle-de vice val ue at du al operati on (Not e 3b)
(4) (3)
(2)
(1)
Single pulse
-10
-0.1
-100
-10 -1 -100
* Single pulse
Ta = 25°C
Curves must be derated linearly with
increase in temperature.
ID max (pulsed) *
10 ms *
1 ms *
VDSS
max
-1
-0.1
TPCF8304
2004-11-18
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• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
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devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
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(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
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extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
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and sold, under any law and regulations.
030619EAA
RESTRICTIONS ON PRODUCT USE
