PZT3906
SMALL SIGNAL PNP TRANSISTOR
PRELIMINARY DATA
■SILICO N EP ITA X IAL PLANA R PNP
TRANSISTOR
■SOT-223 PLA ST IC PAC KAG E FOR
SURFACE MOUNTING CIRCUITS
■TAPE AND RE EL PA CKING
■THE NP N COM PLE M ENT A RY TYP E IS
PZT3904
APPLICATIONS
■WELL SUITABLE FOR SMD MOTHER
BO ARD AS S EMB L Y
■SMALL LOAD SWITCH TRANSISTOR WITH
HIGH GAIN AND LOW SATURATION
VOLTAGE
®
INT E R NAL SCH E M ATI C DIAG RA M
June 2002
12
2
3
SOT-223
Type Marking
PZT3906 3906
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-Base Voltag e (IE = 0) -60 V
VCEO Collector-Emitter Voltage (IB = 0) -40 V
VEBO Emitter-Base Voltage (IC = 0) -6 V
ICCollector Current -200 m A
Ptot Total Dissipation at TC = 25 oC1W
T
stg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
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THERMAL DATA
Rthj-amb • Thermal Resistance Junction-Ambient Max 125 oC/W
• Devic e mounted on a PCB of 1 cm2
ELE CT RICAL CHAR ACT ERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Pa ra meter Test Conditions Min. Typ. Max. Unit
ICEX Collector Cut-off
Current (VBE = 3 V) VCE = -30 V -50 nA
IBEX Collector Cut-off
Current (VBE = 3 V) VCE = -30 V -50 nA
V(BR)CEO∗Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = -1 mA -40 V
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
IC = -10 µA-60 V
V(BR)EBO Emitter-Base
Breakdown Voltage
(IC = 0)
IE = -10 µA -6 V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = -10 mA IB = -1 mA
IC = -50 mA IB = -5 mA -0.25
-0.4 V
V
VBE(sat)∗Base-Emitter
Saturation Voltage IC = -10 mA IB = -1 mA
IC = -50 mA IB = -5 mA -0.65 -0.85
-0.95 V
V
hFE∗DC Current Ga in IC = -0.1 mA VCE = -1 V
IC = -1 mA VCE = -1 V
IC = -10 mA VCE = -1 V
IC = -50 mA VCE = -1 V
IC = -100 mA VCE = -1 V
60
80
100
60
30
300
fTTransition Frequency IC = -10mA VCE = -20 V f = 100MHz 250 MHz
NF Noise Figure VCE = -5 V IC = -0.1 mA f = 10 Hz
to 15.7 KHz RG = 1 KΩ4dB
C
CBO Collector-Base
Capacitance IE = 0 VCB = -5 V f = 100 KHz 6 pF
CEBO Emitter-Base
Capacitance IC = 0 VEB = -0.5 V f = 100 KHz 25 pF
tdDelay Time IC = -10 mA IB = -1 mA
VCC = -3V 35 ns
trRise Time 35 ns
tsStorage Time IC = -10 mA IB1 = -IB2 = -1 mA
VCC = -3V 225 ns
tfFall Time 72 ns
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
PZT3906
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 1.80 0.071
B 0.60 0.70 0.80 0.024 0.027 0.031
B1 2.90 3.00 3.10 0.114 0.118 0.122
c 0.24 0.26 0.32 0.009 0.010 0.013
D 6.30 6.50 6.70 0.248 0.256 0.264
e 2.30 0.090
e1 4.60 0.181
E 3.30 3.50 3.70 0.130 0.138 0.146
H 6.70 7.00 7.30 0.264 0.276 0.287
V10
o
10
o
A1 0.02
P008B
SOT-223 MECHANICAL DATA
PZT3906
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f th ird par ties wh ich ma y resul t from i ts use. N o li cen se is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplie d. S TMicroelectronics pr oducts
ar e not aut horized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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PZT3906
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