ZTX651
Document number: DS33283 Rev. 3 - 2 1 of 7
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ZTX651
A Product Line of
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60V NPN MEDIUM POWER TRANSISTOR IN E-LINE
Features
BVCEO > 60V
IC = 2A High Continuous Collector Current
ICM = 6A Peak Pulse Current
TJ up to +200°C for High Temperature Operation
Low Saturation Voltage < 300mV @ 1A
PD = 1W Power dissipation
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimon y Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PP AP Capable (Note 4)
Mechanical Data
Case: E-Line (T O-92 Compatibl e)
Case Material: molded plasti c, “Green” Molding Com pound
UL Flammabilit y Classification Rating 94V-0
Terminals: Finish Matte Tin Plated Leads, Solderabl e per
MIL-STD-202, Method 208
Weight: 0.159 grams (approximate)
Ordering Information (Notes 4 & 5)
Part Number
Compliance
Marking
Case
Leads
Quantity
ZTX651 AEC-Q101 ZTX651 E-Line Straight 4,000 loose in a Box
ZTX651Q Automotive ZTX651 E-Line Straight 4,000 loose in a Box
ZTX651STZ AEC-Q101 ZTX651 E-Line Joggled 2,000 taped per Ammo Box
ZTX651QSTZ
Automotive
ZTX651
E-Line
Joggled
2,000 taped per Ammo Box
Notes: 1. No purposely added lead. Fully EU Direct iv e 2002/95/E C (RoHS) & 2011/65/E U (RoH S 2) complia nt.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead -free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Device Symbol
Pin-Out Configuration
ZTX651 = Product type Marking Code
E-Line
(TO-92 Compatible)
ZTX
651
Rounded Face View
C
E
B
Rounded Face View
Ejection Mark
on Flat Face
Bottom View
B
C E
B C E
B C E
Part Mark on
Rounded Face
ZTX651
Document number: DS33283 Rev. 3 - 2 2 of 7
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© Diodes Incorporated
ZTX651
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Maximum Ratings (@TA = +25°C, unless otherwise specified. )
Characteristic
Symbol
Value
Unit
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 60 V
Emitter-Base Voltage V
EBO
7 V
Continuous Coll ect or Current I
C
2 A
Peak Pulse Current I
CM
6 A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 6) P
D
1.5 W
Power Dissipation (Note 7) P
D
1 W
Thermal Resistanc e Juncti on to Ambient (Note 6) R
ΘJA
116 °C/W
Thermal Resistanc e Juncti on to Ambient (Note 7) R
ΘJA
175 °C/W
Thermal Resistanc e Juncti on to Lead (Note 8) R
ΘJL
70 °C/W
Operating and Storage Tem perature Range TJ, TSTG -55 to +200 °C
ESD Rating s (Note 9)
Characteristic Symbol Value Unit JEDEC Cl ass
Electrostat ic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostat ic Discharge - Machine Model ESD MM 400 V C
Notes: 6. For a through-hole device mounted at the seating plane (2.5mm lead length) with the collector lead on 25mm x 25mm 1oz copper
that is on a single-sided FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.
7. Same as note (5), except the device is mounted on minimum recommended pad layout with 12mm lead length from the bottom of package to the board.
8. Thermal resistance from junction to solder-point at the seating plane (2.5mm from the bottom of package along the collector lead).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZTX651
Document number: DS33283 Rev. 3 - 2 3 of 7
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ZTX651
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Thermal Characteristics and Derating Information
ZTX651
Document number: DS33283 Rev. 3 - 2 4 of 7
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Electrical Characteristics (@TA = +25°C, unless otherwise specifi ed.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO 80 V IC = 100µA
Collector-Emitter Breakdown Voltage (Note 10) BVCEO 60 V IC = 10mA
Emitter-Base Breakdown Voltage BVEBO 7 V IE = 100µA
Collector Cut-off Current ICBO 0.1
10 µA
µA VCB = 60V
V
CB
= 60V,T
amb
= 100°C
Emitter Cut-off Current
IEBO
0.1 µA
VEB = 6V
Collector-Emitter Saturation Voltage (Note 10) VCE(sat) 120
230 300
500 mV IC = 1A, IB = 100mA
IC =2A, IB = 200mA
Base-Emitter Saturation Voltage (Note 10) V
BE(sat)
0.9 1.25 V I
C
=1A, I
B
= 100mA
Base-Emitt er T urn-On Voltage (Note 10) V
BE(on)
0.8 1 V I
C
= 1A, V
CE
= 2V
DC Current Gain (Note 10) hFE
70
100
80
40
200
200
170
80
300
IC = 50mA, VCE = 2V
IC = 500mA, VCE = 2V
IC = 1A, VCE = 2V
I
C
= 2A, V
CE
= 2V
Current Gain-Bandwidth Product (Note 10) fT 140 175 MHz VCE = 5V, IC = 100mA
f = 100MHz
Output Capacitance (Note 10) Cobo 30 pF VCB = 10V. f = 1MHz
Turn-On Times ton 45 ns IC = 500mA, IB1 = IB2 = 5 0mA,
VCC = 10V
Turn-Off Times toff 800 ns
Notes: 10. Measured und er pul s ed co ndi ti ons. Pulse wi dth 300 µs. Duty cycle 2%
ZTX651
Document number: DS33283 Rev. 3 - 2 5 of 7
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© Diodes Incorporated
ZTX651
A Product Line of
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Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
ZTX651
Document number: DS33283 Rev. 3 - 2 6 of 7
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© Diodes Incorporated
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A Product Line of
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Package Ou t lin e Dim en sio ns
Please see AP02002 at http://www.diodes.c om/datasheets/ap02002.pdf for latest version.
E-Line
Dim
Min
Max
Typ
A 2.16 2.41
b 0.41 0.495
b1 0.41 0.495
D 4.37 4.77
E 3.61 4.01
e 1.27
e2 2.54
F
2.50
L 13.00 13.97
L1 2.50 3.50
All Dimensions in mm
b1 R 1.14 ( .045)
TAPED PRODUCT
E
L
D
e2 e2
E
L
F
D
e e
Ejection
Mark
b
LOOSE PRODUCT
Seating
Plane
A
L1
ZTX651
Document number: DS33283 Rev. 3 - 2 7 of 7
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ZTX651
A Product Line of
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1. are intended to implant into the body, or
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Customers represent that they have all necessary expertise i n the safety and regulatory ramif ications of their l ife support devices or systems, and
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