D45C12G - ON SEMICONDUCTOR

October, 2011 − Rev. 3

1Publication Order Number:

D45C12/D

D45C12 (PNP),

D44C12 (NPN)

Complementary Silicon

Power Transistor

The D45C12 and D44C12 are for general purpose driver or medium

power output stages in CW or switching applications.

Features

•Low Collector−Emitter Saturation Voltage − 0.5 V (Max)

•High ft for Good Frequency Response

•Low Leakage Current

•Pb−Free Packages are Available*

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎ

Symbol

ÎÎÎÎÎ

Value

ÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Voltage

ÎÎÎ

VCEO

ÎÎÎÎÎ

ÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Voltage

ÎÎÎ

VCES

ÎÎÎÎÎ

ÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Base Voltage

ÎÎÎ

VEB

ÎÎÎÎÎ

5.0

ÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current −Continuous

Peak (Note 1)

ÎÎÎ

ÎÎÎÎÎ

4.0

6.0

ÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25°C

Total Power Dissipation @ TA = 25°C

ÎÎÎ

ÎÎÎÎÎ

1.67

ÎÎ

W/°C

ÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎ

TJ, Tstg

ÎÎÎÎÎ

−55 to 150

ÎÎ

°C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎ

Symbol

ÎÎÎÎÎ

Max

ÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance,

Junction−to−Case

ÎÎÎ

RqJC

ÎÎÎÎÎ

4.2

ÎÎ

°C/W

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance,

Junction−to−Ambient

ÎÎÎ

RqJA

ÎÎÎÎÎ

ÎÎ

°C/W

ÎÎÎÎÎÎÎÎÎÎÎÎ

Maximum Lead Temperature for Soldering

Purposes: 1/8 in from Case for 5 Sec

ÎÎÎ

ÎÎÎÎÎ

275

ÎÎ

°C

1. Pulse Width v 6.0 ms, Duty Cycle v 50%.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

D4xC12G

AYWW

Base

Emitter

Collector

4.0 AMPERE COMPLEMENTARY

SILICON POWER

TRANSISTORS 80 VOLTS

TO−220AB

CASE 221A

STYLE 1

123

MARKING DIAGRAM

& PIN ASSIGNMENT

x = 4 or 5

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

D45C12 (PNP), D44C12 (NPN)

http://onsemi.com

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(VCE = 1.0 Vdc, IC = 0.2 Adc)

(VCE = 1.0 Vdc, IC = 1.0 Adc)

(VCE = 1.0 Vdc, IC = 2.0 Adc)

ÎÎÎÎ

hFE

ÎÎÎÎ

120

−

ÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎ

Min

ÎÎÎ

Typ

ÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current (VCE = Rated VCES, VBE = 0)

ÎÎÎÎ

ICES

ÎÎÎ

−

ÎÎÎ

−

ÎÎÎ

0.1

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VEB = 5.0 Vdc)

ÎÎÎÎ

IEBO

ÎÎÎ

−

ÎÎÎ

−

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 50 mAdc)

ÎÎÎÎ

VCE(sat)

ÎÎÎ

−

ÎÎÎ

0.135

ÎÎÎ

0.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 100 mAdc)

ÎÎÎÎ

VBE(sat)

ÎÎÎ

−

ÎÎÎ

0.85

ÎÎÎ

1.3

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Capacitance (VCB = 10 Vdc, f = 1.0 MHz)

ÎÎÎÎ

Ccb

ÎÎÎ

−

ÎÎÎ

125

ÎÎÎ

−

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Gain Bandwidth Product (IC = 20 mA, VCE = 4.0 Vdc, f = 20 MHz)

ÎÎÎÎ

ÎÎÎ

−

ÎÎÎ

−

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING TIMES

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Delay and Rise Times (IC = 1.0 Adc, IB1 = 0.1 Adc)

ÎÎÎÎ

td + tr

ÎÎÎ

−

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Storage Time (IC = 1.0 Adc, IB1 = IB2 = 0.1 Adc)

ÎÎÎÎ

ÎÎÎ

−

ÎÎÎ

350

ÎÎÎ

550

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Fall Time (IC = 1.0 Adc, IB1 = IB2 = 0.1 Adc)

ÎÎÎÎ

ÎÎÎ

−

ÎÎÎ

ORDERING INFORMATION

Device Package Shipping†

D45C12 TO−220AB

50 Units / Rail

D45C12G TO−220AB

(Pb−Free)

D44C12 TO−220AB

D44C12G TO−220AB

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

200

0.04

Figure 1. Typical DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

0.07 0.1 0.2 0.3 1.0 2.0 4.0

hFE, DC CURRENT GAIN

0.4 0.7

100

VCE = 1.0 Vdc

TJ = 25°C

1.0

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

1.0

0.01

IC, COLLECTOR CURRENT (AMPS)

1.0 ms

2.0

0.1 ms

10 20 100

0.2

5.0

TC ≤ 70°C

DUTY CYCLE ≤ 50%

Figure 2. Maximum Rated Forward Bias

Safe Operating Area

3.0

1.0 ms

10 ms

0.02

0.03

0.05

0.3

0.1

0.5

2.0

3.0

5.0

3.0 7.0 30 50 70

D45C12 (PNP), D44C12 (NPN)

http://onsemi.com

PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AG

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.036 0.64 0.91

F0.142 0.161 3.61 4.09

G0.095 0.105 2.42 2.66

H0.110 0.161 2.80 4.10

J0.014 0.025 0.36 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 --- 1.15 ---

Z--- 0.080 --- 2.04

123

SEATING

PLANE

−T−

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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Phone: 81−3−5817−1050

D45C12/D

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