1. Product profile
1.1 General description
Triple high-voltage switching diodes, encapsulated in a SOT457 (SC-74) small
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
1.3 Applications
High-voltage switching in surface-mounted circuits
Automotive
Communication
1.4 Quick reference data
[1] Pulse test: tp300 s; 0.02.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] When switched from IF= 30 mA to IR=30mA; R
L= 100 ; measured at IR=3mA.
BAS21VD
High-voltage switching diodes
Rev. 2 — 29 June 2011 Product data sheet
SOT457
High switching speed: trr 50 ns Low capacitance: Cd5pF
Reverse voltage: VR200 V AEC-Q101 qualified
Repetitive peak reverse voltage:
VRRM 250 V
Repetitive peak forw ar d cu rr en t:
IFRM 1A
Small SMD plastic package
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per diode
IFforward current [1][2] --200mA
IRreverse current VR= 200 V [1] - 25 100 nA
VRreverse voltage - - 200 V
trr reverse recovery time [3] -1650ns
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Product data sheet Rev. 2 — 29 June 2011 2 of 12
NXP Semiconductors BAS21VD
High-voltage switching diodes
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 cathode (diode 1)
2 cathode (diode 2)
3 cathode (diode 3)
4 anode (diode 3)
5 anode (diode 2)
6 anode (diode 1)
132
4
56
006aab241
13
6
2
54
Tabl e 3. Ordering information
Type number Package
Name Description Version
BAS21VD SC-74 plastic surface-mounted package; 6 leads SOT457
Table 4. Marking codes
Type number Marking code
BAS21VD B5
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
VRRM repetitive peak
reverse voltage -250V
VRreverse voltage - 200 V
IFforward current [1][3] -200mA
IFRM repetitive peak
forward current tp1 ms;
25 % -1A
IFSM non-repetitive peak
forward current square wave [2]
tp=10s-16A
tp= 100 s-8A
tp=10ms - 2 A
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Product data sheet Rev. 2 — 29 June 2011 3 of 12
NXP Semiconductors BAS21VD
High-voltage switching diodes
[1] Pulse test: tp300 s; 0.02.
[2] Tj=25C prior to surge.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3] Soldering point of cathode tab.
7. Characteristics
[1] Pulse test: tp300 s; 0.02.
[2] When switched from IF= 30 mA to IR=30mA; R
L= 100 ; measured at IR=3mA.
Per device; one diode loaded
Ptot total power dissipation Tamb 25 C[3] -250mW
[4] -295mW
Tjjunction temperature - 150 C
Tamb ambient temperature 65 +150 C
Tstg storage temperature 65 +150 C
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per device; one diode loaded
Rth(j-a) thermal resistance from
junction to ambient in free air [1] - - 500 K/W
[2] - - 425 K/W
Rth(j-sp) thermal resistance from
junction to solder poi nt [3] - - 140 K/W
Table 7. Characteristics
Tamb =25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
VFforward voltage IF=100mA --1V
IF=200mA --1.25mV
IRreverse current VR=200V [1] - 25 100 nA
VR=200V; T
j= 150 C - - 100 A
Cddiode capacitance f = 1 MHz; VR= 0 V - 0.6 5 pF
trr reverse recovery time [2] - 1650ns
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Product data sheet Rev. 2 — 29 June 2011 4 of 12
NXP Semiconductors BAS21VD
High-voltage switching diodes
(1) Tj= 150 C; typical values
(2) Tj=25C; typical values
(3) Tj=25C; maximum values
Based on square wave currents.
Tj=25C; prior to surge
Fig 1. Forward current as a function of forward
voltage Fig 2. Non-repetitive peak forward current as a
function of pul se duration; maximum values
(1) VR=V
Rmax; maximum values
(2) VR=V
Rmax; typical values
Fig 3. Revers e current as a function of junction temperature
600
IF
(mA)
0
200
400
mbg384
021VF (V)
(1) (3)(2)
10
110 10
3
10
2
10
2
10
4
10
5
1
mle165
t
p
(μA)
I
FSM
(A)
mbg381
200
0 100 Tj (°C)
10
IR
(μA)
1
10−2
102
10−1
(1) (2)
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Product data sheet Rev. 2 — 29 June 2011 5 of 12
NXP Semiconductors BAS21VD
High-voltage switching diodes
f=1MHz; T
j=25C FR4 PCB, standard footprint
Fig 4. Diod e capacitance as a function of reverse
voltage; typical values Fig 5. Reverse voltage as a function of ambient
temperature; derating curve
FR4 PCB, standard footprint
Fig 6. Forward current as a function of ambient temperature; derating curve
010 V
R
(V)
C
d
(pF)
20 40
0.6
0.5
0.3
0.2
0.4
30
mle166
0 50 100 200
VR
(V)
300
0
100
200
150
mle167
Tamb (°C)
mbg442
0 100 200
T
amb
(˚C)
300
200
0
100
I
F
(mA)
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Product data sheet Rev. 2 — 29 June 2011 6 of 12
NXP Semiconductors BAS21VD
High-voltage switching diodes
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
(1) IR=3mA
Fig 7. Reverse recovery time test circuit and waveforms
trr
(1)
+ IFt
output signal
trtpt
10 %
90 %
VR
input signal
V = VR + IF × RS
RS = 50
Ω
IF
D.U.T.
Ri = 50
Ω
SAMPLING
OSCILLOSCOPE
mga881
Fig 8. Package outline SOT457 (SC-74)
04-11-08Dimensions in mm
3.0
2.5 1.7
1.3
3.1
2.7
pin 1 index
1.9
0.26
0.10
0.40
0.25
0.95
1.1
0.9
0.6
0.2
132
4
56
BAS21VD All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 29 June 2011 7 of 12
NXP Semiconductors BAS21VD
High-voltage switching diodes
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
[2] T1: normal taping
[3] T2: reverse taping
Table 8. Packing methods
The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
3000 10000
BAS21VD SOT457 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135
4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165
BAS21VD All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 29 June 2011 8 of 12
NXP Semiconductors BAS21VD
High-voltage switching diodes
11. Soldering
Fig 9. Reflow soldering footprint SOT457 (SC-74)
Fig 10. Wave soldering footprint SOT457 (SC-74)
solder lands
solder resist
occupied area
solder paste
sot457_fr
3.45
1.95
2.8253.3
0.45
(6×)0.55
(6×)
0.7
(6×)
0.8
(6×)2.4
0.95
0.95
Dimensions in mm
BAS21VD All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 29 June 2011 9 of 12
NXP Semiconductors BAS21VD
High-voltage switching diodes
12. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BAS21VD v.2 20110629 Product data sheet - BAS21VD v.1
Modifications: •The format of this document has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•Legal texts have been adapted to the new company name where appropriate.
•Section 1.4 “Quick reference data”: added.
•Table 5: added Tamb; updated Ptot.
•Table 6: updated.
•Figure 1: updated.
•Section 8.1 “Quality information”: added.
•Figure 8: replaced by mi nimized package outline drawing.
•Section 10 “Packing information”: added.
•Section 11 “Soldering”: added.
•Section 13 “Legal information”: updated.
BAS21VD v.1 20030703 Product data sheet - -
BAS21VD All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 29 June 2011 10 of 12
NXP Semiconductors BAS21VD
High-voltage switching diodes
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre vail.
Product specificatio n — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
13.3 Disclaimers
Limited warr a nty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
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Notwithstanding any damages that customer might incur for any reason
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customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semicondu ctors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
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authorized or warranted to be suit able for use in life support, life-critical or
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damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty tha t such application s will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applications or cust omer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for the custome r’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default ,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for th e customer’s app lications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third part y
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
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applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing i n this document may be interpreted or
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Export control — This document as well as the item(s) described herein
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authorization from national authorities.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] dat a sheet Production This document contains the product specification.
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Product data sheet Rev. 2 — 29 June 2011 11 of 12
NXP Semiconductors BAS21VD
High-voltage switching diodes
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sect ions of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BAS21VD
High-voltage switching diodes
© NXP B.V. 2011. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 29 June 2011
Document identifier : BA S 21VD
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 6
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
10 Packing information . . . . . . . . . . . . . . . . . . . . . 7
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
14 Contact information. . . . . . . . . . . . . . . . . . . . . 11
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12