2N6027
2N6028
SILICON
PROGRAMMABLE
UNIJUNCTION TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6027 and 2N6028
devices are silicon programmable unijunction transistors,
manufactured in an epoxy molded package, designed for
adjustable (programmable) characteristics such as
Valley Current (IV), Peak Current (IP), and Intrinsic
Standoff Ratio ().
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Gate-Cathode Forward Voltage VGKF 40 V
Gate-Cathode Reverse Voltage VGKR 5.0 V
Gate-Anode Reverse Voltage VGAR 40 V
Anode-Cathode Voltage VAK 40 V
Peak Non-Repetitive Forward Current (t=10μs) ITSM 5.0 A
Peak Repetitive Forward Current (t=20μs, D.C.=1.0%) ITRM 2.0 A
Peak Repetitive Forward Current (t=100μs, D.C.=1.0%) ITRM 1.0 A
DC Forward Anode Current IT 150 mA
DC Gate Current IG 50 mA
Power Dissipation PD 300 mW
Operating Junction Temperature TJ -50 to +100 °C
Storage Temperature Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N6027 2N6028
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
IGAO V
S=40V - 10 - 10 nA
IGKS V
S=40V - 50 - 50 nA
IP V
S=10V, RG=1.0M - 2.0 - 0.15 μA
IP V
S=10V, RG=10k - 5.0 - 1.0 μA
IV V
S=10V, RG=1.0M - 50 - 25 μA
IV V
S=10V, RG=10k 70 - 25 - μA
IV V
S=10V, RG=200 1.5 - 1.0 - mA
VT V
S=10V, RG=1.0M 0.2 1.6 0.2 0.6 V
VT V
S=10V, RG=10k 0.2 0.6 0.2 0.6 V
VF I
F=50mA - 1.5 - 1.5 V
VO V
B=20V, CC=0.2μF 6.0 - 6.0 - V
tr V
B=20V, CC=0.2μF - 80 - 80 ns
R2 (4-February 2014)
www.centralsemi.com
2N6027
2N6028
SILICON
PROGRAMMABLE
UNIJUNCTION TRANSISTORS
LEAD CODE:
1) Anode
2) Gate
3) Cathode
MARKING:
FULL PART NUMBER
TO-92 CASE - MECHANICAL OUTLINE
www.centralsemi.com
R2 (4-February 2014)
2N6027
2N6028
SILICON
PROGRAMMABLE
UNIJUNCTION TRANSISTORS
TYPICAL ELECTRICAL CHARACTERISTICS
R2 (4-February 2014)
www.centralsemi.com
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(001)
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