1N4448
SMALL SIGNAL
SWITCHING DIODES
Features
Mechanical Data
· Silicon epitaxial planar diode
· Fast switching diodes
· 500mW power dissipation
· This diode is also available in the Mini-MELF case with
the type designation LL4448
· Case: DO-35 glass case
· Weight: Approx. 0.13 gram
Maximum Ratings And Electrical Characteristics
Electrical characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified)
(Ratings at 25℃ ambient temperature unless otherwise specified)
Symbol Value Units
Average rectified current, Half wave rectification with
Resistive load at T
A
=25℃ and F≥50Hz mA150
1)
Surge forward current at t<1S and T
J
=25℃
℃
-65 to +175
Storage temperature range
℃
Reverse Voltage Volts75
V
R
I
AV
I
FSM 500
T
STG
Junction temperature
T
J175
mA
1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
Peak Reverse Voltage Volts100
V
RM
Power dissipation at T
A
=25℃mW
500
1)
Ptot
Symbols Units
Leakage current at V
R
=20V
at V
R
=75V
at V
R
=20V, T
J
=150℃
nA
μA
μA
Junction Capacitance at V
R
=V
F
=0V
I
R
I
R
I
R
C
J
Min.
Thermal resistance, junction to Ambient
Typ. Max.
25
5
50
4
350
1)
K/W
Forward voltage at I
F
=5mA
at I
F
=10mA
V
V
0.72
1
V
F
V
F
Rθ
JA
pF
Reverse Recovery time from I
F
=10mA to I
R
=1mA,
V
R
=6V, R
L
=100Ω4 ns
trr
1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
Reverse breakdown voltage tested with 100μA Pulse V100
V
(BR)R
Rectification efficiency at f=100MHz, V
RF
=2V 0.45
η
Dimensions in inches and (millimeters)
DO-35(GLASS)
1.083(27.5)
MIN.
1.083(27.5)
MIN.
0.154(3.9)
MAX.
0.020(0.52)
MAX.
DIA.
0.075(1.9)
MAX.
DIA.