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SOT223 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4 – MARCH 2001 ✪
FEATURES
* High breakdown and low saturation voltages
APPLICATIONS
* Suitable for video output stages in TV sets
* Switching power supplies
COMPLEMENTARY TYPE:- BF721
PARTMARKING DETAILS:- BF720
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 300 V
Collector-Emitter Voltage VCEO 300 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 100 mA
Continuous Collector Current IC50 mA
Power Dissipation at Tamb
=25°C Ptot 2W
Operating and Storage Temperature
Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage V(BR)CBO 300 V IC=10µA, IE=0
Collector-Emitter
Breakdown Voltage V(BR)CEO 300 V IC=1mA, IB=0*
Emitter-Base
Breakdown Voltage V(BR)EBO 5V
IE=100µA, IC=0
Collector Cut-Off Current ICBO 10 nA VCB
=200V, IE=0
Collector Cut-Off
Current ICER 50
10 nA
µAVCE=200V, RBE=2.7KΩ
VCE=200V, RBE=2.7kΩ †
Emitter Cut-Off Current IEBO 10 µAVEB=5V, IC=0
Collector-Emitter
Saturation Voltage VCE(sat) 0.6 V IC=30mA, IB=5mA*
Base Emitter
Saturation Voltage VBE (sat) 0.9 V IC=20mA, IB=2mA*
Static Forward Current
Transfer Ratio hFE 50 IC=25mA, VCE=20V*
Transition Frequency fT100 MHz IC=10mA, VCE=10V
f=100MHz
Output Capacitance Cobo 0.8 pF VCB
=30V, f=1MHz
†Tamb =150°C
*Measured under pulsed conditions.
For typical characteristics graphs see FMMTA42 datasheet.
BF720
TBA
