PD - 95162 IRF7101PbF Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description HEXFET(R) Power MOSFET l S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 VDSS = 20V RDS(on) = 0.10 ID = 3.5A Top View Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. SO-8 Absolute Maximum Ratings ID @ TA = 25C ID @ TA = 100C IDM PD @TC = 25C VGS dv/dt TJ, TSTG Parameter Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Sodering Temperature, for 10 seconds 3.5 2.3 14 2.0 0.016 12 3.0 -55 to + 150 300(1.6mm from case) Units A W W/C V V/nS C Thermal Resistance Ratings Parameter RJA Maximum Junction-to-Ambient Min. Typ. Max 62.5 Units C/W 10/6/04 IRF7101PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 20 1.0 1.1 Typ. 0.025 7.0 10 24 30 LD Internal Drain Inductance 4.0 LS Internal Source Inductance 6.0 Ciss Coss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance 320 250 75 V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance VGS(th) g fs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Qg Q gs Qgd td(on) tr td(off) tf Max. Units Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 0.10 VGS = 10V, ID = 1.8A 0.15 VGS = 4.5V, ID = 1.0A 3.0 V VDS = VGS, ID = 250A S VDS = 15V, ID = 3.5A 2.0 VDS = 20V, VGS = 0V A 250 VDS = 16V, V GS = 0V, TJ = 125 C 100 VGS = 12V nA -100 VGS = - 12V 15 ID = 1.8A 2.0 nC VDS = 16V 3.6 VGS = 10V VDD = 10V ID = 1.8A ns RG = 8.2 RD = 26 D nH pF Between lead,6mm(0.25in.) from package and center of die contact VGS = 0V VDS = 15V = 1.0MHz G Source-Drain Ratings and Characteristics IS I SM VSD t rr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 2.0 showing the A G integral reverse 14 p-n junction diode. S 1.2 V TJ = 25C, IS = 1.7A, VGS = 0V 36 54 ns TJ = 25C, IF = 1.7A 41 62 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by Pulse width 300s; duty cycle 2%. ISD 3.5A, di/dt 90A/s, VDD V(BR)DSS, Surface mounted on FR-4 board, t 10sec. max. junction temperature. TJ 150C S IRF7101PbF C, IRF7101PbF IRF7101PbF Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 PDM 0.01 1 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.1 0.0001 0.001 10 0.01 0.1 1 10 t1, Rectangular Pulse Duration (sec) Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 100 IRF7101PbF RD V DS VDS 90% VGS D.U.T. RG + - V DD 10% VGS 10V Pulse Width 1 s Duty Factor 0.1 % td(on) Fig 11a. Switching Time Test Circuit tr t d(off) tf Fig 11b. Switching Time Waveforms Current Regulator Same Type as D.U.T. 50K QG .2F 12V 10V .3F D.U.T. QGS + V - DS QGD VG VGS 3mA IG ID Charge Current Sampling Resistors Fig 12a. Gate Charge Test Circuit Fig 12b. Basic Gate Charge Waveform IRF7101PbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + RG * * * * Driver Gate Drive P.W. + dv/dt controlled by R G Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% * VGS = 5V for Logic Level Devices Fig 13. For N-Channel HEXFETS ISD * IRF7101PbF SO-8 Package Outline Dimensions are shown in milimeters (inches) D DIM B 5 A 6 8 7 6 5 1 2 3 4 H 0.25 [.010] A MIN .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 e e1 8X b 0.25 [.010] A MAX b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC 1.27 BASIC e1 6X MILLIMET ERS MAX A E INCHES MIN .025 BASIC 0.635 BAS IC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 K x 45 C y 0.10 [.004] A1 8X L 8X c 7 C A B FOOT PRINT NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIMENS ION: MILLIMETER 3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING T O A S UBS T RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking Information (Lead-Free) EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) INT ERNAT IONAL RECT IFIER LOGO XXXX F 7101 DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF T HE YEAR WW = WEEK A = AS SEMBLY S IT E CODE LOT CODE PART NUMBER IRF7101PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/04