MMBT4126
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary NPN Type Available (MMBT4124)
• Ideal for Low Power Amplification and Switching
• Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2 and 4)
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
• Marking (See Page 3): K2B
• Ordering & Date Code Information: See Page 3
• Weight: 0.008 grams (approximate)
SOT-23
Dim Min Max
A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03
E 0.45 0.60
G 1.78 2.05
H 2.80 3.00
J 0.013 0.10
K 0.903 1.10
L 0.45 0.61
M 0.085 0.180
α 0° 8°
All Dimensions in mm
E
B
C
A
E
JL
TOP VIEW
M
BC
C
BE
H
GD
K
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -25 V
Collector-Emitter Voltage VCEO -25 V
Emitter-Base Voltage VEBO -4.0 V
Collector Current - Continuous (Note 1) IC -200 mA
Power Dissipation (Note 1) PD 300 mW
Thermal Resistance, Junction to Ambient (Note 1) RθJA 417 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage V(BR)CBO -25 ⎯ V IC = -10μA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO -25 ⎯ V IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO -4.0 ⎯ V IE = -10μA, IC = 0
Collector Cutoff Current ICBO ⎯ -50 nA VCB = -20V, IE = 0V
Emitter Cutoff Current IEBO ⎯ -50 nA VEB = -3.0V, IC = 0V
ON CHARACTERISTICS (Note 3)
DC Current Gain hFE 120
60 360
⎯ ⎯ IC = -2.0mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
Collector-Emitter Saturation Voltage VCE(SAT) ⎯ -0.40 V IC = -50mA, IB = -5.0mA
Base-Emitter Saturation Voltage VBE(SAT) ⎯ -0.95 V IC = -50mA, IB = -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo ⎯ 4.5 pF VCB = -5.0V, f = 1.0MHz, IE = 0
Input Capacitance Cibo ⎯ 10 pF VEB = -0.5V, f = 1.0MHz, IC = 0
Small Signal Current Gain hfe 120 480 ⎯ VCE = 1.0V, IC = -2.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product fT 250 ⎯ MHz VCE = -20V, IC = -10mA,
f = 100MHz
Noise Figure NF ⎯ 4.0 dB VCE = -5.0V, IC = -100μA,
RS = 1.0kΩ, f = 1.0kHz
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead. Halogen and Antimony Free.
3. Short duration pulse test used to minimize self-heating effect.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30106 Rev. 8 - 2 1 of 3
www.diodes.com MMBT4126
© Diodes Incorporated
0
50
100
25 50 75 100 125 150 175 200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N
(mW)
D
T , AMBIENT TEMPERA TURE (°C)
Fig. 1, Max Power Dissipation vs.
Am bi ent Tem per at ur e
A
150
200
250
300
350
0
1
100
10
0.1 110 100
C
, IN
P
U
T
C
A
P
A
C
I
T
AN
C
E (p
F
)
C , OUTPUT CAPACITANCE (pF)
IBO
OBO
V , COLLECTOR-BASE VOLT AGE (V)
Fig. 2, Input and Output Capacitance vs.
Colle c tor- Base Voltage
CB
0.01
0.1
10
1
110 100 1,000
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
(V)
SATURATION VOLTAGE
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 4, Typical Collector-Emitter Saturation V oltage
vs. Collector Current
C
1
10
1,000
100
0.1 110 1,000
100
h,
D
C
C
U
R
R
E
N
T
G
AI
N
FE
I , COLLECTOR CURRENT (mA)
Fig. 3, T y pical DC Current Gain vs.
Collector Current
C
0.5
0.6
0.7
0.8
0.9
1.0
110
V , BASE-EMI
100
T
T
E
R
(V)
SATURATION VOL TAGE
BE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current
C
I
I
C
B
= 10
DS30106 Rev. 8 - 2 2 of 3
www.diodes.com MMBT4126
© Diodes Incorporated
Ordering Information (Note 5)
DS30106 Rev. 8 - 2 3 of 3
www.diodes.com MMBT4126
© Diodes Incorporated
Device Packaging Shipping
SOT-23 3000/Tape & Reel
MMBT4126-7-F
Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K2B = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K2B
YM
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012
Code J K L M N P R S T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume an y liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages. LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
