MURS140 & MURS160
Vishay General Semiconductor
Document Number: 88688
Revision: 27-Aug-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Surface Mount Ultrafast Plastic Rectifier
FEATURES
• Glass passivated chip junction
• Ideal for automated placement
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification and
freewheeling application in switching mode converters
and inverters for consumer, computer and
telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMB)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
IF(AV) 1.0 A
VRRM 400 V, 600 V
IFSM 35 A
trr 50 ns
VF1.05 V
TJ max. 175 °C
DO-214AA (SMB)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL MURS140 MURS160 UNIT
Device marking code MG MJ
Maximum repetitive peak reverse voltage VRRM 400 600 V
Working peak reverse voltage VRWM 400 600 V
Maximum DC blocking voltage VDC 400 600 V
Maximum average forward rectified current at (Fig. 1) TL = 150 °C
TL = 125 °C IF(AV)
1.0
2.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load IFSM 35 A
Operating junction and storage temperature range TJ, TSTG - 65 to + 175 °C
MURS140 & MURS160
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88688
Revision: 27-Aug-07
2
Note:
(1) Pulse test: tp = 300 µs pulse, duty cycle ≤ 2 %
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL MURS140 MURS160 UNIT
Maximum instantaneous forward voltage (1) IF = 1.0 A TJ = 25 °C
TJ = 150 °C VF 1.25
1.05 V
Maximum instantaneous reverse current at
rated DC blocking voltage (1)
TJ = 25 °C
TJ = 150 °C IR 5.0
150 µA
Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 50 ns
Maximum reverse recovery time IF = 1.0 A, dI/dt = 50 A/µs,
VR = 30 V, Irr = 10 % IRM trr 75 ns
Maximum forward recovery time IF = 1.0 A, dI/dt = 100 A/µs,
recovery to 1.0 V tfr 50 ns
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL MURS140 MURS160 UNIT
Typical thermal resistance, junction to ambient RθJL 13 C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
MURS160-E3/52T 0.096 52T 750 7" diameter plastic tape and reel
MURS160-E3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel
MURS160HE3/52T (1) 0.096 52T 750 7" diameter plastic tape and reel
MURS160HE3/5BT (1) 0.096 5BT 3200 13" diameter plastic tape and reel
Figure 1. Forward Current Derating Curve
0
2.0
3.0
4.0
5.0
6.0
0 25 50 75 100 125 150 175
1.0
Average Forward Rectified Current (A)
Lead Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
0
10
20
30
40
50
1 10010
Number of Cycles at 50 Hz
Peak Forward Surge Current (A)
MURS140 & MURS160
Vishay General Semiconductor
Document Number: 88688
Revision: 27-Aug-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Leakage Characteristics
Instantaneous Forward Voltage (V)
0.01
0.1
10
1
100
0.4 0.81.2 1.6 2.0 2.4
Instantaneous Forward Current (A)
0
T
J
= 100 °C
T
J
= 175 °C
T
J
= 25 °C
6004020 100
80
Percent of Rated Peak Reverse Voltage (%)
0.001
0.01
1
0.1
10
100
Instantaneous Reverse Leakage
Current (µA)
T
J
= 100 °C
T
J
= 175 °C
T
J
= 25 °C
Figure 5. Typical Junction Capacitance
Reverse Voltage (V)
Junction Capacitance (pF)
0.1 1
1
10
10
100
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Cathode Band
DO-214AA (SMB)
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
0.060 (1.52)
0.030 (0.76)
0.096 (2.44)
0.084 (2.13)
Mounting Pad Layout
0.086 (2.18) MIN.
0.060 (1.52) MIN.
0.085 (2.159) MAX.
0.220 REF.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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