SEMITOP®3
Mosfet Module
SK 150 MHK 055 T
Target Data
Features
 
  
   
   
   
 !
"   
  
# $  

Typical Applications*
%   

 & &
'$"
MHK
Absolute Maximum Ratings ( )* +,   
Symbol Conditions Values Units
MOSFET
-"" ** -
-."" /)0 -
# ( )* 20 +3 )40 5*0 6
#7 8 5 3 ( )* 20 +3 940 )*0 6
:;40<<<=5*0 +
Inverse diode
#>(;# ( )* 20 +3 )40 5*0 6
#>7 (;#7 8 5 3 ( )* 20 +3 940 )*0 6
:;40<<<=5*0 +
Freewheeling CAL diode
#>(;# ( + 6
:+
 ; 40 <<< = 5)* +
 , 50 )?0 +
- 6, 5  5 )*00 @ 9000 -
Characteristics ( )* +,   
Symbol Conditions min. typ. max. Units
MOSFET
-A"" -." (0-,#( 0,)* 6 ** -
-." -." ( -"3 #( 0,)* 6 ),* 9,) 4,* -
#"" -." (0-3-" ( -""3 :( )* 5)* + 5 B6
#."" -." ( / )0- 3-" ( 0 - 500 6
A" #(*63-." ( 50 -3 :( )* + 5,5 5,* C
A" #(*63-." ( 50 -3 :( 5)* + 5,D ),? C
  7">E >
   F )5,) >
 -." (0-3-" ( )* -3 ( 5 7G 9,9 >
 5,? >
%" 
   F 40 
- ( 90 -3 -." ( 50 -3
#( H0 6
520 
 A.( ),* C H0 
550 
A:;  7">E   0,2 I@J
Inverse diode
-" #>(*63-." (0-3 :( )* + 0,H 5,* -
#AA7   F 2 6
K #>( 5*0 63 &: ( )* +3 A.( ),* C 0,9* B
 -A( 90 63 @ ( 500 6@B 20 
Free-wheeling diode
->#>( 63 -." ( - -
#AA7   F 6
K #>( 63 &: ( + B
 -( 63 @ ( 6@B 
Mechanical data
75  L ),* M
90
 "E7# $N9 ?4
SK 150 MHK 055 T MOSFET,TRANSISTOR
1 01-08-2007 SCT © by SEMIKRON
http://store.iiic.cc/
Fig. 3 Output characteristic, tp= 80 µs, Tj= 25 °C Fig. 4 Typ. PTC Characteristic
Fig. 5 Breakdown voltage vs. temperature Fig. 6 Typ. capacitancies vs. drain-source voltage
Fig. 7 Gate charge characteristic Fig. 8 Diode forward characteristic, tp= 80 µs
SK 150 MHK 055 T MOSFET,TRANSISTOR
2 01-08-2007 SCT © by SEMIKRON
http://store.iiic.cc/
Dimensions in mm
"'..E" E %E#67E EA >A E "%EA $#M" 6M E 7'M #M. $#M" #M E $F ) 
 ?4
7I
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of component characteristics.
Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON
products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We
therefore strongly recommend prior consultation of our personal.
SK 150 MHK 055 T MOSFET,TRANSISTOR
3 01-08-2007 SCT © by SEMIKRON
http://store.iiic.cc/