PMBTA42DS,125 - NEXPERIA

Important notice

Dear Customer,

On 7 February 2017 the former NXP Standard Product business became a new company with the

tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS

semiconductors with its focus on the automotive, industrial, computing, consumer and wearable

application markets

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use

the references to Nexperia, as shown below.

Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,

use http://www.nexperia.com

Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use

salesaddresses@nexperia.com (email)

Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on

the version, as shown below:

reserved

Should be replaced with:

If you have any questions related to the data sheet, please contact our nearest sales office via e-mail

or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and

understanding,

Kind regards,

Team Nexperia

1. Product proﬁle

1.1 General description

NPN/NPN high-voltage double transistors in a small SOT457 (SC-74) Surface Mounted

Device (SMD) plastic package.

1.2 Features

nHigh breakdown voltage

nTwo electrically isolated transistors

nSmall SMD plastic package

1.3 Applications

nAutomotive:

uHigh- and low-side switches

uVoltage regulators

nCommunication: Telecom line interface

nConsumer: CRT TV

nComputing: Monitors

1.4 Quick reference data

PMBTA42DS

NPN/NPN high-voltage double transistors

Rev. 02 — 27 August 2009 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

VCEO collector-emitter voltage open base - - 300 V

ICcollector current - - 100 mA

ICM peak collector current single pulse;

tp≤1ms - - 200 mA

Product data sheet Rev. 02 — 27 August 2009 2 of 10

NXP Semiconductors PMBTA42DS

NPN/NPN high-voltage double transistors

2. Pinning information

3. Ordering information

4. Marking

5. Limiting values

Table 2. Pinning

Pin Description Simpliﬁed outline Symbol

1 emitter TR1

2 base TR2

3 collector TR2

4 emitter TR2

5 base TR1

6 collector TR1

132

006aaa677

132

TR1

456

TR2

Table 3. Ordering information

Type number Package

Name Description Version

PMBTA42DS SC-74 plastic surface mounted package (TSOP6); 6 leads SOT457

Table 4. Marking codes

Type number Marking code

PMBTA42DS P4

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per transistor

VCBO collector-base voltage open emitter - 300 V

VCEO collector-emitter voltage open base - 300 V

VEBO emitter-base voltage open collector - 6 V

ICcollector current - 100 mA

ICM peak collector current single pulse;

tp≤1ms - 200 mA

IBM peak base current single pulse;

tp≤1ms - 100 mA

Ptot total power dissipation Tamb ≤25 °C[1] - 290 mW

[2] - 370 mW

[3] - 450 mW

Product data sheet Rev. 02 — 27 August 2009 3 of 10

NXP Semiconductors PMBTA42DS

NPN/NPN high-voltage double transistors

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.

[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.

[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.

Per device

Ptot total power dissipation Tamb ≤25 °C[1] - 420 mW

[2] - 560 mW

[3] - 700 mW

Tjjunction temperature - 150 °C

Tamb ambient temperature −65 +150 °C

Tstg storage temperature −65 +150 °C

Table 5. Limiting values

…continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

Rth(j-a) thermal resistance from

junction to ambient in free air [1] - - 431 K/W

[2] - - 338 K/W

[3] - - 278 K/W

Rth(j-sp) thermal resistance from

junction to solder point - - 105 K/W

Per device

Rth(j-a) thermal resistance from

junction to ambient in free air [1] - - 298 K/W

[2] - - 223 K/W

[3] - - 179 K/W

Product data sheet Rev. 02 — 27 August 2009 4 of 10

NXP Semiconductors PMBTA42DS

NPN/NPN high-voltage double transistors

7. Characteristics

Table 7. Characteristics

amb

=25

C unless otherwise speciﬁed

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

ICBO collector-base

cut-off current VCB = 200 V; IE= 0 A - - 100 nA

IEBO emitter-base

cut-off current VEB =6V; I

C= 0 A - - 100 nA

hFE DC current gain VCE =10V; I

C= 1 mA 25 - -

VCE =10V; I

C=10mA 40 - -

VCE =10V; I

C=30mA 40 - -

VCEsat collector-emitter

saturation voltage IC= 20 mA; IB= 2 mA - - 500 mV

VBEsat base-emitter

saturation voltage IC= 20 mA; IB= 2 mA - - 900 mV

Cre feedback

capacitance VCB =20V; I

C=i

c=0A;

f = 1 MHz --3pF

fTtransition

frequency VCE =20V; I

C= 10 mA;

f = 100 MHz 50 - - MHz

Tamb =25°CV

CE =10V

(1) Tamb = 150 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

Fig 1. Collector current as a function of

collector-emitter voltage; typical values Fig 2. DC current gain as a function of collector

current; typical values

VCE (V)

0108462

006aaa688

100

150

200

(mA)

IB (mA) = 30

mld391

100

200

300

hFE

IC (mA)

10−1102

101

(1)

(2)

(3)

Product data sheet Rev. 02 — 27 August 2009 5 of 10

NXP Semiconductors PMBTA42DS

NPN/NPN high-voltage double transistors

VCE =10V

(1) Tamb =−55 °C

(2) Tamb =25°C

(3) Tamb = 150 °C

IC/IB=10

(1) Tamb =−55 °C

(2) Tamb =25°C

(3) Tamb = 150 °C

Fig 3. Base-emitter voltage as a function of collector

current; typical values Fig 4. Base-emitter saturation voltage as a function

of collector current, typical values

IC/IB=10

(1) Tamb = 150 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

Fig 5. Collector-emitter saturation voltage as a function of collector current; typical values

IC (mA)

10−1102

101

mld393

400

600

200

800

1000

VBE

(mV)

(1)

(2)

(3)

mld394

600

400

800

1000

VBEsat

(mV)

200

IC (mA)

10−1102

101

(1)

(2)

(3)

mld395

IC (mA)

10−1102

101

102

103

VCEsat

(mV)

(1)

(2)

(3)

Product data sheet Rev. 02 — 27 August 2009 6 of 10

NXP Semiconductors PMBTA42DS

NPN/NPN high-voltage double transistors

8. Package outline

9. Packing information

[1] For further information and the availability of packing methods, see Section 13.

[2] T1: normal taping

[3] T2: reverse taping

Fig 6. Package outline SOT457 (SC-74)

04-11-08Dimensions in mm

3.0

2.5 1.7

1.3

3.1

2.7

pin 1 index

1.9

0.26

0.10

0.40

0.25

0.95

1.1

0.9

0.6

0.2

132

Table 8. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

[1]

Type number Package Description Packing quantity

3000 10000

PMBTA42DS SOT457 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135

4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165

Product data sheet Rev. 02 — 27 August 2009 7 of 10

NXP Semiconductors PMBTA42DS

NPN/NPN high-voltage double transistors

10. Soldering

Dimensions in mm

Fig 7. Reﬂow soldering footprint SOT457 (SC-74)

Dimensions in mm

Fig 8. Wave soldering footprint SOT457 (SC-74)

solder lands

solder resist

occupied area

solder paste

0.95

2.825 0.45 0.55

1.60

1.95

3.45

1.70

3.10

3.20

3.30

msc422

1.40

4.30

5.30

0.45

msc423

1.45 4.45

5.05

solder lands

solder resist

occupied area

Product data sheet Rev. 02 — 27 August 2009 8 of 10

NXP Semiconductors PMBTA42DS

NPN/NPN high-voltage double transistors

11. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PMBTA42DS_2 20090827 Product data sheet - PMBTA42DS_1

Modiﬁcations: •This data sheet was changed to reﬂect the new company name NXP Semiconductors,

including new legal deﬁnitions and disclaimers. No changes were made to the technical

content.

•Figure 8 “Wave soldering footprint SOT457 (SC-74)”:updated

PMBTA42DS_1 20060106 Product data sheet - -

Product data sheet Rev. 02 — 27 August 2009 9 of 10

NXP Semiconductors PMBTA42DS

NPN/NPN high-voltage double transistors

12. Legal information

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Deﬁnitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

12.2 Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conﬂict between information in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

12.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

13. Contact information

For more information, please visit: http://www.nxp.com

For sales ofﬁce addresses, please send an email to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Deﬁnition

Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development.

Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation.

Product [short] data sheet Production This document contains the product speciﬁcation.

NXP Semiconductors PMBTA42DS

NPN/NPN high-voltage double transistors

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 27 August 2009

Document identifier: PMBTA42DS_2

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

14. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6

9 Packing information. . . . . . . . . . . . . . . . . . . . . . 6

10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9

12.2 Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

13 Contact information. . . . . . . . . . . . . . . . . . . . . . 9

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10