MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Preferred Device Complementary Plastic Silicon Power Transistors . . . designed for low power audio amplifier and low current, high speed switching applications. * Collector-Emitter Sustaining Voltage VCEO(sus) = 40 Vdc - MJE170, MJE180 = 60 Vdc - MJE171, MJE181 = 80 Vdc - MJE172, MJE182 * DC Current Gain hFE = 30 (Min) @ IC = 0.5 Adc = 12 (Min) @ IC = 1.5 Adc * Current-Gain - Bandwidth Product = 50 MHz (Min) @ IC = 100 mAdc fT * Annular Construction for Low Leakages = 100 nA (Max) @ Rated VCB ICBO http://onsemi.com 3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40 - 60 - 80 VOLTS 12.5 WATTS MARKING DIAGRAM TBD 3 2 1 TO-225AA SUFFIX CASE 77-09 Style 1 xx A WL, L YY, Y WW, W = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week ORDERING INFORMATION Device Package Shipping TBD TBD Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2003 February, 2003 - Rev. 6 1 Publication Order Number: MJE171/D MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII III IIII IIII IIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII III IIII IIII IIIII II II IIIIIIIIIIIIIIIIIIII III IIII IIII IIIII IIIIIIIIIIIIIIIIIIII III IIII IIII IIIII II IIIIIIIIIIIIIIIIIIII III IIIIIIIIIII II IIII IIII IIIII IIIIIIIIIIIIIIIIIIII III IIIIIIIIIII II IIIIIIIIIIIIIIIIIIII III IIIIIIIIIII II IIIIIIIIIIIIIIIIIIII III IIIIIIIIIII II IIIIIIIIIIIIIIIIIIII III IIIIIIIIIII II IIIIIIIIIIIIIIIIIIII III IIIIIIIIIII II II IIIIIIIIIIIIIIIIIIII III IIIIIIIIIII IIIIIIIIIIIIIIIIIIII III IIIIIIIIIII II I IIIIIIIIII II IIIIIIIIIIIIIIIIIIII III IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII III IIIIIIIIIII II IIIIIIIIIIIIIIIIIIII III IIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII III IIIIIIIIIII II IIIIIIIIIIIIIIIIIIII III IIIIIIIIIII II II IIIIIIIIIIIIIIIIIIII III IIIIIIIIIII IIIIIIIIIIIIIIIIIIII III IIIIIIIIIII II IIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIII MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Peak Base Current Total Power Dissipation Symbol MJE170 MJE180 MJE171 MJE181 MJE172 MJE182 Unit VCB 60 80 100 Vdc VCEO 40 60 80 Vdc VEB 7.0 Vdc IC 3.0 6.0 Adc IB 1.0 Adc PD @ TA = 25C 1.5 0.012 Derate above 25C Total Power Dissipation PD @ TC = 25C 12.5 0.1 Derate above 25C Operating and Storage Junction Temperature Range TJ, Tstg - 65 to + 150 Watts W/C Watts W/C C THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction-to-Case Characteristic JC 10 C/W Thermal Resistance, Junction-to-Ambient JA 83.4 C/W http://onsemi.com 2 PD, POWER DISSIPATION (WATTS) MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) TA 2.8 TC 14 2.4 12 2.0 10 TC 1.6 8.0 1.2 6.0 0.8 4.0 TA 0.4 2.0 0 0 20 40 60 80 100 120 140 160 T, TEMPERATURE (C) IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III Figure 1. Power Derating ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max VCEO(sus) 40 60 80 - - 0.1 0.1 0.1 - 0.1 0.1 - 0.1 50 30 12 250 - - 0.3 0.9 1.7 - 1.5 2.0 Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 10 mAdc, IB = 0) MJE170, MJE180 MJE171, MJE181 MJE172, MJE182 Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0, TC = 150C) (VCB = 80 Vdc, IE = 0, TC = 150C) (VCB = 100 Vdc, IE = 0, TC = 150C) MJE170, MJE180 MJE171, MJE181 MJE172, MJE182 MJE170, MJE180 MJE171, MJE181 MJE172, MJE182 Vdc Adc ICBO Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0) IEBO mAdc Adc ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) (IC = 1.5 Adc, VCE = 1.0 Vdc) hFE - Collector-Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.5 Adc, IB = 150 mAdc) (IC = 3.0 Adc, IB = 600 mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC = 1.5 Adc, IB = 150 mAdc) (IC = 3.0 Adc, IB = 600 mAdc) VBE(sat) Base-Emitter On Voltage (IC = 500 mAdc, VCE = 1.0 Vdc) VBE(on) - 1.2 Vdc fT 50 - MHz - 60 40 Vdc Vdc DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (Note 1) (IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob MJE171/MJE172 MJE181/MJE182 1. fT = hfe* ftest. http://onsemi.com 3 pF MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) VCC +30 V 1K 500 300 200 RC 25 s +11 V SCOPE RB t, TIME (ns) D1 51 tr 100 0 -9.0 V tr, tf 10 ns -4 V DUTY CYCLE = 1.0% RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES. 50 30 20 td 10 5 3 2 NPN MJE181/182 PNP MJE171/172 1 1 2 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMPS) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.03 3 5 10 Figure 3. Turn-On Time Figure 2. Switching Time Test Circuit 1.0 0.7 0.5 VCE = 30 V IC/IB = 10 VBE(off) = 4.0 V TJ = 25C JC(t) = r(t) JC JC = 10C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) 0.05 0.02 0.01 0 (SINGLE PULSE) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.02 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 t, TIME (ms) 5.0 Figure 4. Thermal Response http://onsemi.com 4 10 20 50 100 200 MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) ACTIVE-REGION SAFE OPERATING AREA 10 5.0 100s IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) 10 500s 2.0 1.0 dc 0.5 0.2 0.1 0.05 0.02 0.01 1.0 5.0ms TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO MJE171 MJE172 2.0 3.0 5.0 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 5.0 100s 2.0 500s 1.0 5.0ms 0.5 0.2 0.1 0.05 0.02 0.01 1.0 100 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. MJE171, MJE172 Figure 6. MJE181, MJE182 There are two limitations on the power handling ability of a transistor - average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 5 and 6 is based on TJ(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 4. At high case temperature, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 10K 100 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C 1K 500 300 200 ts 100 tf 50 30 20 PNP MJE171/MJE172 NPN MJE181/MJE182 70 C, CAPACITANCE (pF) 5K 3K 2K t, TIME (ns) dc TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW MJE181 RATED VCEO MJE182 50 Cib 30 20 Cob NPN MJE181/182 PNP MJE171/172 10 10 0.01 0.02 0.03 0.05 0.1 0.2 0.3 TJ = 25C 0.5 1 2 3 5 10 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMPS) 2.0 3.0 5.0 7.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Capacitance Figure 7. Turn-Off Time http://onsemi.com 5 30 50 MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) PACKAGE DIMENSIONS TO-225 CASE 77-9 AA -BU F Q -A- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077-01 THRU -08 OBSOLETE, NEW STANDARD 077-09. C M 1 2 3 H DIM A B C D F G H J K M Q R S U V K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 --- STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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