MOTOROLA Order this document by 2N2896/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor 2N2896 COLLECTOR 3 LAST SHIP 21/03/00 NPN Silicon 2 BASE 1 EMITTER MAXIMUM RATINGS 3 LIFETIME BUY Rating Symbol Value Unit Collector - Emitter Voltage VCEO 90 Vdc Collector - Emitter Voltage VCER 140 Vdc Collector- Base Voltage VCBO 140 Vdc Emitter- Base Voltage VEBO 7.0 Vdc Collector Current -- Continuous IC 1.0 Adc Total Device Dissipation @ TA = 25C Derate above 25C PD 0.5 2.86 Watts mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.8 10.3 Watts mW/C TJ, Tstg - 65 to +200 C Operating and Storage Junction Temperature Range 2 1 CASE 22-03, STYLE 1 TO-18 (TO-206AA) Symbol Max Unit Thermal Resistance, Junction to Ambient Characteristic RqJA 350 C/W Thermal Resistance, Junction to Case RqJC 97 C/W LAST ORDER 23/09/99 THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)CER 140 -- Vdc OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = 100 mAdc, RBE = 10 )(1) Collector - Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0)(1) VCEO(sus) 90 -- Vdc Collector -Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 120 -- Vdc Emitter - Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO 7.0 -- Vdc Collector Cutoff Current (VCB = 60 Vdc, IC = 0) Collector Cutoff Current (VCB = 90 Vdc, IE = 0) Collector Cutoff Current (VCB = 90 Vdc, IE = 0, TA = +150C) ICBO -- -- -- 0.01 0.01 10 mAdc Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO -- 0.01 mAdc 35 20 60 -- -- 200 VCE(sat) -- 0.6 Vdc VBE(sat) -- 1.2 Vdc ON CHARACTERISTICS DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = - 55C) (IC = 150 mAdc, VCE = 10 Vdc)(1) hFE Collector - Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc)(1) Base-Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 1.8%. Adc)(1) -- (Replaces 2N2895/D) Motorola Small-Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 2N2896 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Min Max Unit fT 120 -- MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo -- 15 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo -- 80 pF Small-Signal Current Gain (IC = 5.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) hfe 50 275 -- Noise Figure (IC = 0.3 mAdc, VCE = 10 Vdc, RS = 500 , f = 1.0 kHz) NF -- 8.0 dB Characteristic C, CAPACITANCE (pF) 50 TJ = 150C 1.0 TJ = 25C 0.5 TJ = - 55C 0.1 0.5 1.0 10 100 IC, COLLECTOR CURRENT (mA) 1000 Cib 10 Cob 5.0 1.0 0.1 1.0 VR, REVERSE VOLTAGE (V) Figure 1. DC Current Gain 10 Figure 2. Capacitance 1.4 1.2 1.0 I VBE(sat) C IB 0.8 VBE(on) for VCE = 1.0 V 0.6 0.4 I VCE(sat) C IB 0.2 0 + 10 0.1 + 10 1.0 10 100 IC, COLLECTOR CURRENT (mA) 1000 Figure 3. "On" Voltages 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data LAST ORDER 23/09/99 100 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN LIFETIME BUY Current - Gain -- Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz) LAST SHIP 21/03/00 SMALL- SIGNAL CHARACTERISTICS (- 55C to 25C) 0.8 VC for VCE(sat) 0 - 0.8 VBB for VBE - 55C to + 25C 6.0 2.0 + 25C to + 150C - 1.6 0.5 1.0 10 50 100 IC, COLLECTOR CURRENT (mA) 500 0 1000 Figure 4. Temperature Coefficients Re = 1.0 k IC = 100 A 0.1 1.0 f, FREQUENCY (kHz) 10 100 Figure 5. Frequency Effects 14 f = 1.0 kHz VCE = 10 V TA = 25C 10 IC = 100 A 8.0 6.0 4.0 100 hfe , CURRENT GAIN 12 NF, NOISE FIGURE (dB) IC = 10 A 0 0.1 1.0 0 0.1 10 100 1000 RS, SOURCE RESISTANCE (k OHMS) Figure 6. Source Resistance Effects 1.0 IC, COLLECTOR CURRENT (mAdc) LAST ORDER 23/09/99 2.0 10 Figure 7. Current Gain Bandwidth Product versus Collector Current -- 1.0 kHz hfe 1000 f (MHz) 200 VCE = 20 V 40 10 IC, COLLECTOR CURRENT (A) LIFETIME BUY RS = 4.3 k IC = 10 A 4.0 LAST SHIP 21/03/00 + 25C to + 150C 1.6 NF, NOISE FIGURE (dB) V, TEMPERATURE COEFFICIENT (mV/ C) 2N2896 1.0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mAdc) Figure 8. Current Gain -- Bandwidth Product Motorola Small-Signal Transistors, FETs and Diodes Device Data 500 s 5.0 ms 1.0 ms dc TO-39 dc TO-18 0.1 0.01 1.0 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 9. Active Region Safe Operating Area 3 2N2896 -A- B E C SEATING PLANE -T- F L P K STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR D 3 PL 0.36 (0.014) LIFETIME BUY N -H- T A M H M N 2 1 M M G 3 J CASE 22-03 (TO-206AA) ISSUE R DIM A B C D E F G H J K L M N P INCHES MIN MAX 0.209 0.230 0.178 0.195 0.170 0.210 0.016 0.021 --- 0.030 0.016 0.019 0.100 BSC 0.036 0.046 0.028 0.048 0.500 --- 0.250 --- 45 _BSC 0.050 BSC --- 0.050 MILLIMETERS MIN MAX 5.31 5.84 4.52 4.95 4.32 5.33 0.406 0.533 --- 0.762 0.406 0.483 2.54 BSC 0.914 1.17 0.711 1.22 12.70 --- 6.35 --- 45_BSC 1.27 BSC --- 1.27 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. 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Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 or 602-303-5454 JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-81-3521-8315 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 INTERNET: http://Design-NET.com ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 4 *2N2896/D* 2N2896/D Motorola Small-Signal Transistors, FETs and Diodes Device Data LAST ORDER 23/09/99 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION J MEASURED FROM DIMENSION A MAXIMUM. 4. DIMENSION F APPLIES BETWEEN DIMENSION P AND L. DIMENSION D APPLIES BETWEEN DIMENSION L AND K MINIMUM. LEAD DIAMETER IS UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. 5. DIMENSION E INCLUDES THE TAB THICKNESS. (TAB THICKNESS IS 0.51(0.002) MAXIMUM). LAST SHIP 21/03/00 PACKAGE DIMENSIONS