2N2896 - Motorola / Freescale Semiconductor

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Motorola Small–Signal Transistors, FETs and Diodes Device Data

General Purpose Transistor

NPN Silicon

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage VCEO 90 Vdc

Collector–Emitter Voltage VCER 140 Vdc

Collector–Base Voltage VCBO 140 Vdc

Emitter–Base Voltage VEBO 7.0 Vdc

Collector Current — Continuous IC1.0 Adc

Total Device Dissipation @ TA = 25°C

Derate above 25°CPD0.5

2.86 Watts

mW/°C

Total Device Dissipation @ TC = 25°C

Derate above 25°CPD1.8

10.3 Watts

mW/°C

Operating and Storage Junction

Temperature Range TJ, Tstg –65 to +200 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Ambient R

JA 350 °C/W

Thermal Resistance, Junction to Case R

JC 97 °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (IC = 100 mAdc, RBE = 10 Ω)(1) V(BR)CER 140 — Vdc

Collector–Emitter Sustaining V oltage (IC = 100 mAdc, IB = 0)(1) VCEO(sus) 90 — Vdc

Collector –Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 120 — Vdc

Emitter–Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO 7.0 — Vdc

Collector Cutof f Current (VCB = 60 Vdc, IC = 0)

Collector Cutoff Current (VCB = 90 Vdc, IE = 0)

Collector Cutoff Current (VCB = 90 Vdc, IE = 0, TA = +150°C)

ICBO —

—

0.01

Adc

Emitter Cutof f Current (VEB = 5.0 Vdc, I C = 0) IEBO — 0.01

Adc

ON CHARACTERISTICS

DC Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C)

(IC = 150 mAdc, VCE = 10 Vdc)(1)

hFE 35

—

200

—

Collector–Emitter Saturation V oltage (IC = 150 mAdc, IB = 15 mAdc)(1) VCE(sat) — 0.6 Vdc

Base–Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 Adc)(1) VBE(sat) — 1.2 Vdc

1. Pulse Test: Pulse Width

300

s, Duty Cycle

1.8%.

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

2N2896

CASE 22–03, STYLE 1

TO–18 (TO–206AA)

 Motorola, Inc. 1996

COLLECTOR

BASE

EMITTER

(Replaces 2N2895/D)

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2N2896

2 Motorola Small–Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic Symbol Min Max Unit

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz) fT120 — MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo — 15 pF

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo — 80 pF

Small–Signal Current Gain

(IC = 5.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) hfe 50 275 —

Noise Figure

(IC = 0.3 mAdc, VCE = 10 Vdc, RS = 500 Ω, f = 1.0 kHz) NF — 8.0 dB

1.0

0.1

0.5

1000100101.00.5 IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

ORMALI

D D

RRE

C, CAPACITANCE (pF)

101.00.1

100

1.0

5.0

VR, REVERSE VOLTAGE (V)

Figure 2. Capacitance

1.4

1.2

1.0

0.8

0.6

0.4

0.2

01000100101.00.1 IC, COLLECTOR CURRENT (mA)

Figure 3. “On” Voltages

V, VOLTAGE (VOLTS)

Cob

Cib

TJ = 150°C

TJ = 25°C

TJ = –55°C

VBE(on) for VCE = 1.0 V

VBE(sat) IC

VCE(sat) IC

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2N2896

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TEM

ERAT

COEFFICIE

)°θ

hfe, CURRENT GAIN

1.6

0.8

–0.8

–1.6

100050101.00.5 IC, COLLECTOR CURRENT (mA)

Figure 4. Temperature Coefficients

100 500 0

2.0

4.0

6.0

101.00.1 100

f, FREQUENCY (kHz)

Figure 5. Frequency Effects

8.0

6.0

4.0

2.0

00.1 1.0 10 100 1000

RS, SOURCE RESISTANCE (k OHMS)

Figure 6. Source Resistance Effects

100

0.1 1.0 10

IC, COLLECTOR CURRENT (mAdc)

Figure 7. Current Gain Bandwidth Product

versus Collector Current — 1.0 kHz hfe

NF, NOISE FIGURE (dB)

OISE

)

RS = 4.3 kΩ

IC = 10 µA

Re = 1.0 kΩ

IC = 100 µA

f = 1.0 kHz

VCE = 10 V

TA = 25°C

IC = 100 µA

IC = 10 µA

+25°C to +150°C

(–55°C to 25°C)

θVC for VCE(sat)

–55°C to +25°C

+25°C to +150°C

θVBB for VBE

fτ(MHz)

1000

200

1.0 0.1 1.0 10 100

IC, COLLECTOR CURRENT (mAdc)

Figure 8. Current Gain — Bandwidth Product

0.01

0.1

1.0 10 100

VCE, COLLECTOR–EMITTER VOLTAGE (V)

Figure 9. Active Region Safe Operating Area

VCE = 20 V

IC, COLLECTOR CURRENT (A)

500 µs

1.0 ms5.0 ms

dc TO–39 dc TO–18

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2N2896

4 Motorola Small–Signal Transistors, FETs and Diodes Device Data

PACKAGE DIMENSIONS

CASE 22–03

(TO–206AA)

ISSUE R

SEATING

PLANE

D3 PL

–T–

–H–

0.36 (0.014) H M

–A–

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.209 0.230 5.31 5.84

B0.178 0.195 4.52 4.95

C0.170 0.210 4.32 5.33

D0.016 0.021 0.406 0.533

E––– 0.030 ––– 0.762

F0.016 0.019 0.406 0.483

G0.100 BSC 2.54 BSC

H0.036 0.046 0.914 1.17

J0.028 0.048 0.711 1.22

K0.500 ––– 12.70 –––

L0.250 ––– 6.35 –––

M45 BSC 45 BSC

N0.050 BSC 1.27 BSC

P––– 0.050 ––– 1.27

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION J MEASURED FROM DIMENSION A

MAXIMUM.

4. DIMENSION F APPLIES BETWEEN DIMENSION P

AND L. DIMENSION D APPLIES BETWEEN

DIMENSION L AND K MINIMUM. LEAD DIAMETER

IS UNCONTROLLED IN DIMENSION P AND

BEYOND DIMENSION K MINIMUM.

5. DIMENSION E INCLUDES THE TAB THICKNESS.

(TAB THICKNESS IS 0.51(0.002) MAXIMUM).

STYLE 1:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and

specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola

data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”

must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of

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and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees

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Opportunity/Af firmative Action Employer .

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2N2896/D

*2N2896/D*

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