MJE18002 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data





 

SWITCHMODE



NPN Bipolar Power Transistor

For Switching Power Supply Applications

The MJE/MJF18002 have an applications specific state–of–the–art die designed

for use in 220 V line operated Switchmode Power supplies and electronic light

ballasts. These high voltage/high speed transistors offer the following:

•Improved Efficiency Due to Low Base Drive Requirements:

— High and Flat DC Current Gain hFE

— Fast Switching

— No Coil Required in Base Circuit for Turn–Off (No Current Tail)

•Tight Parametric Distributions are Consistent Lot–to–Lot

•Two Package Choices: Standard TO–220 or Isolated TO–220

•MJF18002, Case 221D, is UL Recognized at 3500 VRMS: File #E69369

MAXIMUM RATINGS

Rating Symbol MJE18002 MJF18002 Unit

Collector–Emitter Sustaining Voltage VCEO 450 Vdc

Collector–Emitter Breakdown Voltage VCES 1000 Vdc

Emitter–Base Voltage VEBO 9.0 Vdc

Collector Current — Continuous

— Peak(1) IC

ICM 2.0

5.0 Adc

Base Current — Continuous

— Peak(1) IB

IBM 1.0

2.0 Adc

RMS Isolated Voltage(2) Test No. 1 Per Fig. 1

(for 1 sec, R.H. < 30%, Test No. 2 Per Fig. 2

TC = 25°C) Test No. 3 Per Fig. 3

VISOL —

—

4500

3500

1500

Total Device Dissipation (TC = 25°C)

Derate above 25°CPD50

0.4 25

0.2 Watts

W/°C

Operating and Storage Temperature TJ, Tstg –65 to 150 °C

THERMAL CHARACTERISTICS

Rating Symbol MJE18002 MJF18002 Unit

Thermal Resistance — Junction to Case

— Junction to Ambient RθJC

RθJA 2.5

62.5 5.0

62.5 °C/W

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds TL260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) VCEO(sus) 450 — — Vdc

Collector Cutoff Current (VCE = Rated VCEO, IB = 0) ICEO — — 100 µAdc

Collector Cutoff Current (VCE = Rated VCES, VEB = 0) TC = 125°C

Collector Cutoff Current (VCE = 800 V, VEB = 0) TC = 125°CICES —

—

100

500

100

µAdc

Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0) IEBO — — 100 µAdc

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%. (continued)

(2) Proper strike and creepage distance must be provided.

Designer’s Data for “W orst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA Order this document

by MJE18002/D

 Motorola, Inc. 1995

MJE18002

MJF18002

POWER TRANSISTOR

2.0 AMPERES

1000 VOLTS

25 and 50 WATTS

CASE 221A–06

TO–220AB

MJE18002

CASE 221D–02

ISOLATED TO–220 TYPE

UL RECOGNIZED

MJF18002

*Motorola Preferred Device

REV 1

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2 Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS

Base–Emitter Saturation Voltage (IC = 0.4 Adc, IB = 40 mAdc)

Base–Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.2 Adc) VBE(sat) —

—0.825

0.92 1.1

1.25 Vdc

Collector–Emitter Saturation Voltage

(IC = 0.4 Adc, IB = 40 mAdc) @ TC = 125°C

(IC = 1.0 Adc, IB = 0.2 Adc) @ TC = 125°C

VCE(sat) —

—

0.2

0.25

0.3

0.5

0.6

Vdc

DC Current Gain (IC = 0.2 Adc, VCE = 5.0 Vdc) @ TC = 125°C

DC Current Gain (IC = 0.4 Adc, VCE = 1.0 Vdc) @ TC = 125°C

DC Current Gain (IC = 1.0 Adc, VCE = 1.0 Vdc) @ TC = 125°C

DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc)

hFE 14

—

6.0

5.0

—

8.0

—

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 MHz) fT— 13 — MHz

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob — 35 60 pF

Input Capacitance (VEB = 8.0 V) Cib — 400 600 pF

Dynamic Saturation:

determined 1.0 µs and

3.0 µs after rising IB1

reach 0.9 final IB1

(see Figure 18)

IC = 0.4 A

IB1 = 40 mA

VCC = 300 V

1.0 µs@ TC = 125°C

VCE(dsat)

—

—3.5

8.0 —

—

Vdc

determined 1.0 µs and

3.0 µs after rising IB1

reach 0.9 final IB1

(see Figure 18)

IB1 = 40 mA

VCC = 300 V

3.0 µs@ TC = 125°C—

—1.5

3.8 —

—

reach 0.9 final IB1

(see Figure 18)

IC = 1.0 A

IB1 = 0.2 A

VCC = 300 V

1.0 µs@ TC = 125°C—

—8.0

14 —

—

IB1 = 0.2 A

VCC = 300 V

3.0 µs@ TC = 125°C—

—2.0

7.0 —

—

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 µs)

Turn–On Time

IC = 0.4 Adc

IB1 = 40 mAdc

IB2 = 0.2 Adc

VCC = 300 V

@ TC = 125°Cton —

—200

130 300

—ns

Turn–Off Time

IB2 = 0.2 Adc

VCC = 300 V

@ TC = 125°Ctoff —

—1.2

1.5 2.5

—µs

Turn–On Time

IC = 1.0 Adc

IB1 = 0.2 Adc

IB2 = 0.5 Adc

VCC = 300 V

@ TC = 125°Cton —

—85

95 150

—ns

Turn–Off Time

IB2 = 0.5 Adc

VCC = 300 V

@ TC = 125°Ctoff —

—1.7

2.1 2.5

—µs

SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 µH)

Fall Time

IC = 0.4 Adc, IB1 = 40 mAdc,

IB2 = 0.2 Adc

@ TC = 125°Ctfi —

—125

120 200

—ns

Storage Time @ TC = 125°Ctsi —

—0.7

0.8 1.25

—µs

Crossover Time @ TC = 125°Ctc—

—110

110 200

—ns

Fall Time

IC = 1.0 Adc, IB1 = 0.2 Adc,

IB2 = 0.5 Adc

@ TC = 125°Ctfi —

—110

120 175

—ns

Storage Time @ TC = 125°Ctsi —

—1.7

2.25 2.75

—µs

Crossover Time @ TC = 125°Ctc—

—200

250 300

—ns

Fall Time

IC = 0.4 Adc, IB1 = 50 mAdc,

IB2 = 50 mAdc

@ TC = 125°Ctfi —

—140

185 200

—ns

Storage Time @ TC = 125°Ctsi —

—2.2

2.5 3.0

—µs

Crossover Time @ TC = 125°Ctc—

—140

220 250

—ns

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Motorola Bipolar Power Transistor Device Data

C, CAPACITANCE (pF)

0.001 0.010 0.100 1.000

hFE, DC CURRENT GAIN

100

0.01 0.10 1.00

10.00

Figure 1. DC Current Gain @ 1 Volt

100

0.01 0.10 1.00 10.00

0.01

0.10

1.00

10.00

0.01 0.10 1.00

10.00

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

0.01 0.10 1.00 10.00 1

100

1000

1 10 100

1000

TYPICAL STATIC CHARACTERISTICS

TJ = 25

TJ = 125

IC/IB = 10

IC/IB = 5

hFE, DC CURRENT GAINVCE, VOLTAGE (VOLTS)

VCE, VOLTAGE (VOLTS)

VBE, VOLTAGE (VOLTS)

0.01 0.10 1.00 10.00

IC, COLLECTOR CURRENT (AMPS)

VCE = 1 V

TJ = 125

TJ = 25

IC, COLLECTOR CURRENT (AMPS)

Figure 2. DC Current Gain @ 5 Volts

VCE = 5 V

TJ = 125

CTJ = 25

TJ = –20

0.01 0.10 1.00 10.00

0.001 0.010 0.100 1.000

IB, BASE CURRENT (mA)

Figure 3. Collector Saturation Region

TJ = 25

IC = 0.2 A

0.4 A 1 A

1.5 A 2 A

IC, COLLECTOR CURRENT (AMPS)

Figure 4. Collector–Emitter Saturation Voltage

IC/IB = 10

IC/IB = 5

0.01 0.10 1.00 10.00

IC, COLLECTOR CURRENT (AMPS)

Figure 5. Base–Emitter Saturation Region

TJ = 25

TJ = 125

1 10 100 1000

VCE, COLLECTOR–EMITTER (VOLTS)

Figure 6. Capacitance

Cib

Cob

TJ = 25

f = 1 MHz

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4 Motorola Bipolar Power Transistor Device Data

hFE, FORCED GAIN

tsi, STORAGE TIME (ns)

IC, COLLECTOR CURRENT (AMPS)

500

1000

1500

2000

2500

5 7 9 11 13

500

1000

1500

2000

2500

3000

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

500

1000

1500

2000

2500

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0

500

1000

1500

2000

2500

3000

3500

4000

4500

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

2.0

100

150

200

250

300

350

400

450

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

2.0

100

200

300

400

500

600

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

TYPICAL SWITCHING CHARACTERISTICS

(IB2 = IC/2 for all switching)

t, TIME (ns)t, TIME (ns)t, TIME (ns)

t, TIME (ns)t, TIME (ns)

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

IC, COLLECTOR CURRENT (AMPS)

Figure 7. Resistive Switching, ton

IC/IB = 5

IC/IB = 10

TJ = 125

TJ = 25

IB(off) = IC/2

VCC = 300 V

PW = 20

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

IC, COLLECTOR CURRENT (AMPS)

Figure 8. Resistive Switching, toff

IB(off) = IC/2

VCC = 300 V

PW = 20

TJ = 25

TJ = 125

IC/IB = 10

IC/IB = 5

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

Figure 9. Inductive Storage Time, tsi

IB(off) = IC/2

VCC = 15 V

VZ = 300 V

LC = 200

TJ = 25

TJ = 125

IC/IB = 5

IC/IB = 10

5 7 9 11 13 15

Figure 10. Inductive Storage Time

TJ = 25

TJ = 125

IB(off) = IC/2

VCC = 15 V

VZ = 300 V

LC = 200

IC = 1 A

IC = 0.4 A

IB(off) = IC/2

VCC = 15 V

VZ = 300 V

LC = 200

TJ = 25

TJ = 125

tfi

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

IC, COLLECTOR CURRENT (AMPS)

Figure 11. Inductive Switching, tc & tfi, IC/IB = 5

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

IC, COLLECTOR CURRENT (AMPS)

Figure 12. Inductive Switching, tc & tfi, IC/IB = 10

IB(off) = IC/2

VCC = 15 V

VZ = 300 V

LC = 200

TJ = 25

TJ = 125

tfi

 

Motorola Bipolar Power Transistor Device Data

0.01

0.10

1.00

10.00

10 100 1000

100

120

140

160

180

5 6 7 8 9 10 11 12 13 14 15

0.2

0.4

0.6

0.8

1.0

20 40 60 80 100 120 140 160

POWER DERATING FACTOR

0.5

1.0

1.5

2.0

2.5

0 200 400 600 800 1000

1200

110

130

150

170

190

210

230

250

5 6 7 8 9 10 11 12 13 14

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC–VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate. The data of Figure 15 is based

on TC = 25°C; TJ(pk) is variable depending on power level.

Second breakdown pulse limits are valid for duty cycles to

10% but must be derated when TC > 25°C. Second break-

down limitations do not derate the same as thermal limita-

tions. Allowable current at the voltages shown on Figure 15

may be found at any case temperature by using the appropri-

ate curve on Figure 17. TJ(pk) may be calculated from the

data in Figures 20 and 21. At any case temperatures, thermal

limitations will reduce the power that can be handled to val-

ues less the limitations imposed by second breakdown. For

inductive loads, high voltage and current must be sustained

simultaneously during turn–off with the base to emitter junc-

tion reverse biased. The safe level is specified as a reverse

biased safe operating area (Figure 16). This rating is verified

under clamped conditions so that the device is never sub-

jected to an avalanche mode.

tfi, FALL TIME (ns)

TC, CROSS-OVER TIME (ns)

IC, COLLECTOR CURRENT (AMPS)

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

TYPICAL SWITCHING CHARACTERISTICS

(IB2 = IC/2 for all switching)

5 6 7 8 9 10 11 12 13 14 15

hFE, FORCED GAIN

Figure 13. Inductive Fall Time

TJ = 25

TJ = 125

IB(off) = IC/2

VCC = 15 V

VZ = 300 V

LC = 200

IC = 1 A

5 6 7 8 9 10 11 12 13 14 15

hFE, FORCED GAIN

Figure 14. Inductive Crossover Time

GUARANTEED SAFE OPERATING AREA INFORMATION

IC = 1 A

IC = 0.4 A

TJ = 25

TJ = 125

IB(off) = IC/2

VCC = 15 V

VZ = 300 V

LC = 200

10 100 1000

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 15. Forward Bias Safe Operating Area

s10

s50

s1 ms5 ms

DC (MJE18002)

DC (MJF18002)

0 200 400 600 800 1000 1200

Figure 16. Reverse Bias Switching Safe

Operating Area

≤

125

IC/IB

≥

LC = 500

VBE(off) = 0.5 V

0 V –1.5 V

20 40 60 80 100 120 160140

TC, CASE TEMPERATURE (

Figure 17. Forward Bias Power Derating

SECOND

BREAKDOWN

DERATING

THERMAL

DERATING

 

6 Motorola Bipolar Power Transistor Device Data

–5

–4

–3

–2

–1

0 1 2 3 4 5 6 7 8

TIME

VCE

VOLTS

90% IB

dyn 1

dyn 3

00 1 2 3 4 5 6 7 8

TIME

tsi

VCLAMP 10% VCLAMP

90% IB1

10% IC

90% IC

tfi

Figure 18. Dynamic Saturation Voltage Measurements Figure 19. Inductive Switching Measurements

Table 1. Inductive Load Switching Drive Circuit

+15 V

F150

Ω

3 V

100

Ω

3 V

MPF930

+10 V

Ω

COMMON

–Voff

500

MPF930

MTP8P10

MUR105

MJE210 MTP12N10

MTP8P10

150

Ω

3 V

100

Iout

Rb1

Rb2

IC PEAK

VCE PEAK

VCE

IB1

IB2

V(BR)CEO(sus)

L = 10

RB2 =

∞

VCC = 20 VOLTS

IC(pk) = 100 mA

INDUCTIVE SWITCHING

L = 200

RB2 = 0

VCC = 15 VOLTS

RB1 SELECTED FOR

DESIRED IB1

RBSOA

L = 500

RB2 = 0

VCC = 15 VOLTS

RB1 SELECTED

FOR DESIRED IB1

 

Motorola Bipolar Power Transistor Device Data

0.01

0.10

1.00

0.01 0.10 1.00 10.00 100.00

1000.00

0.01

0.10

1.00

0.01 0.10 1.00 10.00 100.00 1000.00 10000.00

100000.00

t, TIME (ms)

r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED)

t, TIME (ms)

r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED)

SINGLE PULSE

0.02

0.2

0.5

0.1

SINGLE PULSE

0.02

0.05

0.2

0.5

JC(t) = r(t) R

JC =

C/W MAX

D CURVES APPLY FOR

POWER PULSE TRAIN

SHOWN READ TIME AT t1

TJ(pk) – TC = P(pk) R

JC(t)

DUTY CYCLE, D = t1/t2

P(pk)

JC(t) = r(t) R

JC =

C/W MAX

D CURVES APPLY FOR

POWER PULSE TRAIN

SHOWN READ TIME AT t1

TJ(pk) – TC = P(pk) R

JC(t)

DUTY CYCLE, D = t1/t2

P(pk)

TYPICAL THERMAL RESPONSE

Figure 20. Typical Thermal Response (ZθJC(t)) for MJE18002

Figure 21. Typical Thermal Response (ZθJC(t)) for MJF18002

 

8 Motorola Bipolar Power Transistor Device Data

MOUNTED

FULLY ISOLATED

PACKAGE

LEADS

HEATSINK

0.110

″

MIN

Figure 22a. Screw or Clip Mounting Position

for Isolation Test Number 1

*Measurement made between leads and heatsink with all leads shorted together

CLIP

MOUNTED

FULLY ISOLATED

PACKAGE

LEADS

HEATSINK

CLIP 0.107

″

MIN

MOUNTED

FULLY ISOLATED

PACKAGE

LEADS

HEATSINK

0.107

″

MIN

Figure 22b. Clip Mounting Position

for Isolation Test Number 2 Figure 22c. Screw Mounting Position

for Isolation Test Number 3

TEST CONDITIONS FOR ISOLATION TESTS*

4–40 SCREW

PLAIN WASHER

HEATSINK

COMPRESSION WASHER

NUT

CLIP

HEATSINK

Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw

torque of 6 to 8 in .lbs is sufficient to provide maximum power dissipation capability . The compression washer helps to maintain a con-

stant pressure on the package over time and during large temperature excursions.

Destructive laboratory tests show that using a hex head 4–40 screw , without washers, and applying a torque in excess of 20 in .lbs will

cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.

Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in .lbs without adversely affecting the pack-

age. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10

in .lbs of mounting torque under any mounting conditions.

Figure 23a. Screw–Mounted Figure 23b. Clip–Mounted

MOUNTING INFORMATION**

Figure 23. Typical Mounting Techniques

for Isolated Package

**For more information about mounting power semiconductors see Application Note AN1040.

 

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 221A–06

TO–220AB

ISSUE Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.147 3.61 3.73

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.018 0.025 0.46 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 ––– 1.15 –––

Z––– 0.080 ––– 2.04

1 2 3

SEATING

PLANE

–T–

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

STYLE 2:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

DIM

AMIN MAX MIN MAX

MILLIMETERS

0.621 0.629 15.78 15.97

INCHES

B0.394 0.402 10.01 10.21

C0.181 0.189 4.60 4.80

D0.026 0.034 0.67 0.86

F0.121 0.129 3.08 3.27

G0.100 BSC 2.54 BSC

H0.123 0.129 3.13 3.27

J0.018 0.025 0.46 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.14 1.52

N0.200 BSC 5.08 BSC

Q0.126 0.134 3.21 3.40

R0.107 0.111 2.72 2.81

S0.096 0.104 2.44 2.64

U0.259 0.267 6.58 6.78

–B–

–Y–

3 PL

1 2 3

0.25 (0.010) Y

SEATING

PLANE

–T–

CASE 221D–02

(ISOLATED TO–220 TYPE)

UL RECOGNIZED: FILE #E69369

ISSUE D

 

10 Motorola Bipolar Power Transistor Device Data

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the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such

unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless

against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.

Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer .

MJE18002/D

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