MWI 225-12 E9 IGBT Modules Sixpack IC80 = 250 A VCES = 1200 V VCE(sat) typ. = 2.1 V NPT3 IGBT 2 28 4 15 20 25 16 17 21 22 26 27 11/12 29 6 13 14 9/10 18 19 7/8 23 24 1 3 5 See outline drawing for pin arrangement Features IGBTs Conditions Maximum Ratings VCES TVJ = 25C to 125C 1200 V 20 V 355 250 A A TC = 25C TC = 80C RBSOA RG = 5 ; TVJ = 125C Clamped inductive load; L = 100 H tSC (SCSOA) VCE = 900 V; VGE = 15 V; RG = 5 TVJ = 125C; non-repetitive; VCEmax < VCES Ptot TC = 25C Symbol Conditions ICM = 500 VCEK < VCES A 10 s 1.4 kW e IC25 IC80 -o u VGES s Characteristic Values IC = 225 A; VGE = 15 V VGE(th) IC = 8 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V IGES VCE = 0 V; VGE = 20 V td(on) tr td(off) tf Eon Eoff Cies QGon TVJ = 25C TVJ = 125C p h VCE(sat) a (TVJ = 25C, unless otherwise specified) min. typ. max. 2.1 2.4 2.5 2.9 V V 6.5 V 1 8 mA mA 400 nA 4.5 TVJ = 25C TVJ = 125C 1 Inductive load, TVJ = 125C VCE = 600 V; IC = 200 A VGE = 15 V; RG = 3.6 180 100 650 120 13 21 ns ns ns ns mJ mJ VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 300 A 14 1.5 nF C RthJC 0.09 IXYS reserves the right to change limits, test conditions and dimensions. * NPT3 IGBT technology * low saturation voltage * low switching losses * square RBSOA, no latch up * high short circuit capability * positive temperature coefficient for easy parallelling * MOS input, voltage controlled * ultra fast free wheeling diodes * solderable pins for PCB mounting * package with copper base plate t Symbol Advantages * space savings * reduced protection circuits * package designed for wave soldering Typical Applications * AC motor control * AC servo and robot drives * power supplies K/W 20100421a 1-5 (c) 2010 IXYS All rights reserved http://store.iiic.cc/ MWI 225-12 E9 Diodes Symbol Conditions IF80 TC = 80C 205 IFRM tp = 1 ms 400 A It TVJ = 125C; t = 10 ms; VR = 0 V 10000 As Symbol Conditions 2 Maximum Ratings A 2 Characteristic Values (TVJ = 25C, unless otherwise specified) min. VF IF = 225 A; VGE = 0 V; TVJ = 25C IRM IF = 225 A; diF/dt = 1800 A/s; TVJ = 125C; VR = 800 V typ. max. 2.2 RthJC V 160 A 0.165 K/W Temperature Sensor NTC R25 B25/50 Characteristic Values Module Conditions TVJ TJM Tstg operating 4.75 5.0 3375 5.25 k K Maximum Ratings -40...+125 +150 -40...+125 IISOL < 1 mA; 50/60 Hz Mounting torque (M5) Terminal connection torque (M6) Symbol Conditions h a s VISO Md Resistance terminal to chip dS dA Creepage distance on surface Strike distance in air RthCH with heatsink compound p Rtherm-chip* ) max. e Symbol typ. -o T = 25C min. t Conditions u Symbol Weight C C C 3400 V~ 3-6 3-6 Nm Nm Characteristic Values min. typ. 0.55 12.7 10 max. m mm mm 0.01 K/W 900 g * V = VCEsat + 2x Rtherm-chip*IC resp. V = VF + 2x R*IF ) IXYS reserves the right to change limits, test conditions and dimensions. 20100421a 2-5 (c) 2010 IXYS All rights reserved http://store.iiic.cc/ MWI 225-12 E9 p h a s e -o u t Dimensions in mm (1 mm = 0.0394") = tolerance for all dimensions: IXYS reserves the right to change limits, test conditions and dimensions. 20100421a 3-5 (c) 2010 IXYS All rights reserved http://store.iiic.cc/ MWI 225-12 E9 400 400 300 300 IF ICE 200 [A] 200 [A] TJ = 125C 100 TJ = 125C 100 TJ = 25C TJ = 25C 0 0 1 2 0 3 4 5 6 7 VF [V] 300 IC 9V 0 2 4 VCE [V] a 0 s 100 11 V 13 V 15 V 17 V 19 V 200 9V [A] e [A] u TJ = 125C 11 V 13 V 15 V 17 V 19 V 200 11 t 400 -o IC 10 Fig. 2 Typ. transfer characteristics 400 300 9 VGE [V] Fig. 1 Typ. forward characteristics of free wheeling diode TJ = 25C 8 100 0 6 Fig. 3 Typ. output characteristics 0 2 VCE [V] 4 6 h Fig. 4 Typ. output characteristics 15 10 VGE [V] 1200 200 p 20 TJ = 125C VR = 600 V IF = 200 A 150 5 IRM VCE = 600 V IC = 65 A 0 900 trr 600 100 [ns] [A] -5 -10 50 IRM trr -15 -20 0 1 2 3 QG [C] Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved 0 0 1000 2000 300 0 3000 -di/dt [A/s] Fig. 6 Typ. turn off characteristics of free wheeling diode 20100421a 4-5 MWI 225-12 E9 80 50 240 1000 VCE = 600 V VGE = 15 V td(on) 60 VCE = 600 V VGE = 15 V E 40 180 tr RG = 3.6 TVJ = 125C 40 [mJ] Eoff 30 t 120 10 0 100 200 0 400 300 0 100 IC [A] 60 td(on) 50 tr [mJ] 2500 2000 20 1000 Eoff 30 [mJ] e [ns] 30 VCE = 600 V VGE = 15 V IC = 200 A TVJ = 125C 40 t 200 3000 td(off) -o 300 60 t Fig. 8 Typ. turn off energy and switching times versus collector current 400 VCE = 600 V VGE = 15 V IC = 200 A TVJ = 125C E 1500 t [ns] Eoff 100 Erec(off) 10 20 30 RG [] a 0 10 s Eon 0 40 0 10 Qrr [K/W] Qrr 12 Erec(off) 1500 2000 2500 6 3000 di/dt [A/s] Fig. 11 Typ. turn off energy and recovered charge of free wheeling diode IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved diode 0.16 [nC] [mJ] 6 0 40 30 0.20 24 18 1000 20 ZthJC 8 4 500 10 Fig. 10 Typ. turn off energy and switching times versus gate resistor h VR = 600 V IF = 15 V TVJ = 125C 0 RG [] 30 p 12 500 tf Fig. 9 Typ. turn on energy and switching times versus gate resistor Erec(off) 0 400 300 u 120 0 200 IC [A] Fig. 7 Typ. turn on energy and switching times versus collector current 90 200 tf Eoff Erec(off) 0 t 400 [ns] 20 60 Eon 600 td(off) [mJ] [ns] 20 800 RG = 3.6 TVJ = 125C 0.12 single pulse IGBT 0.08 0.04 0.00 1 10 100 1000 10000 t [ms] Fig. 12 Typ. transient thermal impedance 20100421a 5-5