© 2010 IXYS All rights reserved 1 - 5
20100421a
MWI 225-12 E9
IXYS reserves the right to change limits, test conditions and dimensions.
IC80 = 250 A
VCES = 1200 V
VCE(sat) typ. = 2.1 V
IGBT Modules
Sixpack
NPT3 IGBT
Features
• NPT3 IGBT technology
• low saturation voltage
• low switching losses
• square RBSOA, no latch up
• high short circuit capability
• positive temperature coefficient for
easy parallelling
• MOS input, voltage controlled
• ultra fast free wheeling diodes
• solderable pins for PCB mounting
• package with copper base plate
Advantages
• space savings
• reduced protection circuits
• package designed for wave soldering
Typical Applications
• AC motor control
• AC servo and robot drives
• power supplies
642
531
272217
252015
231813
241914
7/8
9/10
11/12
2616
28
29
21
IGBTs
Symbol Conditions Maximum Ratings
VCES TVJ = 25°C to 125°C 1200 V
VGES ± 20 V
IC25
IC80
TC = 25°C
TC = 80°C
355
250
A
A
RBSOA RG = 5 Ω; TVJ = 125°C
Clamped inductive load; L = 100 µH
ICM = 500
VCEK < VCES
A
tSC
(SCSOA)
VCE = 900 V; VGE = ±15 V; RG = 5 Ω
TVJ = 125°C; non-repetitive; VCEmax < VCES
10 µs
Ptot TC = 25°C 1.4 kW
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat) IC = 225 A; VGE = 15 V TVJ = 25°C
TVJ = 125°C
2.1
2.4
2.5
2.9
V
V
VGE(th) IC = 8 mA; VGE = VCE 4.5 6.5 V
ICES VCE = VCES; VGE = 0 V TVJ = 25°C
TVJ = 125°C 1
1
8
mA
mA
IGES VCE = 0 V; VGE = ± 20 V 400 nA
td(on)
tr
td(off)
tf
Eon
Eoff
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 200 A
VGE = ±15 V; RG = 3.6 Ω
180
100
650
120
13
21
ns
ns
ns
ns
mJ
mJ
Cies
QGon
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600 V; VGE = 15 V; IC = 300 A
14
1.5
nF
µC
RthJC 0.09 K/W
See outline drawing for pin arrangement
p h a s e - o u t
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© 2010 IXYS All rights reserved 2 - 5
20100421a
MWI 225-12 E9
IXYS reserves the right to change limits, test conditions and dimensions.
Diodes
Symbol Conditions Maximum Ratings
IF80 TC = 80°C 205 A
IFRM tp = 1 ms 400 A
I2tTVJ = 125°C; t = 10 ms; VR = 0 V 10000 A2s
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VFIF = 225 A; VGE = 0 V; TVJ = 25°C 2.2 V
IRM IF = 225 A; diF/dt = 1800 A/µs;
TVJ = 125°C; VR = 800 V
160 A
RthJC 0.165 K/W
Temperature Sensor NTC
Symbol Conditions Characteristic Values
min. typ. max.
R25
B25/50
T = 25°C 4.75 5.0
3375
5.25 kΩ
K
Module
Symbol Conditions Maximum Ratings
TVJ
TJM
Tstg
operating -40...+125
+150
-40...+125
°C
°C
°C
VISO IISOL < 1 mA; 50/60 Hz 3400 V~
MdMounting torque (M5)
Terminal connection torque (M6)
3 - 6
3 - 6
Nm
Nm
Symbol Conditions Characteristic Values
min. typ. max.
Rtherm-chip*)Resistance terminal to chip 0.55 mΩ
dS
dA
Creepage distance on surface
Strike distance in air
12.7
10
mm
mm
RthCH with heatsink compound 0.01 K/W
Weight 900 g
*) V = VCEsat + 2x Rtherm-chip·IC resp. V = VF + 2x R·IF
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© 2010 IXYS All rights reserved 3 - 5
20100421a
MWI 225-12 E9
IXYS reserves the right to change limits, test conditions and dimensions.
Dimensions in mm (1 mm = 0.0394")
= tolerance for all dimensions:
p h a s e - o u t
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© 2010 IXYS All rights reserved 4 - 5
20100421a
MWI 225-12 E9
IXYS reserves the right to change limits, test conditions and dimensions.
0 1000 2000 3000
0
50
100
150
200
0
300
600
900
1200
4 5 6 7 8 9 10 11
0
100
200
300
400
0246
0
100
200
300
400
0123
-20
-15
-10
-5
0
5
10
15
20
0 2 4 6
0
100
200
300
400
VCE [V]
IC
[A]
VGE [V]
IC
[A]
ICE
[A]
QG [µC] -di/dt [A/µs]
VGE
[V]
trr
[ns]
IRM
TJ = 25°C
9 V
TJ = 125°C
TJ = 25°C
TJ = 125°C
0123
0
100
200
300
400
VF [V]
IF
[A]
TJ = 125°C
TJ = 25°C
11 V
13 V
15 V
17 V
19 V
11 V
13 V
15 V
17 V
19 V
9 V
trr
IRM
[A]
VCE [V]
TJ = 125°C
VR = 600 V
IF = 200 A
VCE = 600 V
IC = 65 A
Fig. 2 Typ. transfer characteristicsFig. 1 Typ. forward characteristics
of free wheeling diode
Fig. 3 Typ. output characteristics Fig. 4 Typ. output characteristics
Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics
of free wheeling diode
p h a s e - o u t
© 2010 IXYS All rights reserved 5 - 5
20100421a
MWI 225-12 E9
IXYS reserves the right to change limits, test conditions and dimensions.
0 100 200 300 400
0
20
40
60
80
0
60
120
180
240
100 200 300 400
0
10
20
30
40
50
0
200
400
600
800
1000
1 10 100 1000 10000
0.00
0.04
0.08
0.12
0.16
0.20
0 10 20 30 40
0
10
20
30
40
50
60
0
500
1000
1500
2000
2500
3000
0 10 20 30 40
0
30
60
90
120
0
100
200
300
400
Eoff
td(off)
tf
Eoff tf
IC [A] IC [A]
Eoff
[mJ]
E
[mJ]
t
[ns]
t
[ns]
RG [Ω]
t [ms]
E
[mJ]
Eoff
[mJ]
t
[ns]
t
[ns]
ZthJC
[K/W]
tr
Eon
tr
td(on)
IGBT
Eon
single pulse
500 1000 1500 2000 2500 3000
4
6
8
10
12
6
12
18
24
30
di/dt [A/µs]
Erec(off)
[mJ]
Qrr
[nC]
Qrr
Erec(off)
td(on)
Erec(off)
td(off)
Erec(off)
diode
VR = 600 V
IF = ±15 V
TVJ = 125°C
VCE = 600 V
VGE = ±15 V
IC = 200 A
TVJ = 125°C
VCE = 600 V
VGE = ±15 V
IC = 200 A
TVJ = 125°C
RG [Ω]
VCE = 600 V
VGE = ±15 V
RG = 3.6 Ω
TVJ = 125°C
VCE = 600 V
VGE = ±15 V
RG = 3.6 Ω
TVJ = 125°C
Fig. 7 Typ. turn on energy and switching times
versus collector current
Fig. 8 Typ. turn off energy and switching times
versus collector current
Fig. 9 Typ. turn on energy and switching times
versus gate resistor
Fig. 10 Typ. turn off energy and switching times
versus gate resistor
Fig. 11 Typ. turn off energy and recovered charge
of free wheeling diode
Fig. 12 Typ. transient thermal impedance
p h a s e - o u t
