4
C1
B2 E2
E1 B1 C2
pin #1
PNP Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector
currents to 200 mA. Sourced from Process 68.
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol Parameter Value Units
VCEO Collec t or-Emitter Volt age 45 V
VCES Collec t or-Base Volt age 50 V
VCBO Collec t or-Base Volt age 50 V
VEBO Emi tter-Base Voltage 5.0 V
ICCollect or Current - Continuous 200 mA
TJ, Tstg Operating and Storage Junction Temperat ure Range -55 to +150 °C
1998 Fairchild Semiconductor Corporation
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
BC857S
PDTotal Device Dissipation
Derate above 25°C300
2.4 mW
mW/°C
RθJA Thermal Resis t ance, Junc t i on to A mbient 415 °C/W
BC857S
SC70-6
Mark: 3C
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
BC857S
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Typ Max Units
V(BR)CEO Collec tor-Emitter B reakdown Vol tage IC = 10 mA, IB = 0 45 V
V(BR)CES Collec tor-Base Bre akdown Voltage IC = 10 µA, IE = 0 50 V
V(BR)CBO Collec tor-Base Bre akdown Voltage IC = 10 µA, IE = 0 50 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 V
ICBO Collecto r-Cutoff Current VCB = 30 V
VCB = 30 V, TA = 150°C15
4.0 nA
µA
ON CHARACTERISTICS
hFE DC Current Gain IC = 2.0 mA, VCE = 5.0 V 125 630
VCE(sat)Collector-Emit ter Saturati on V olt age IC = 10 mA , IB = 0.5 mA
IC = 100 mA, IB = 5.0 mA 0.3
0.65 V
V
VBE(on)Base-Emitter On Volt age IC = 2.0 mA, VCE = 5.0 V
IC = 10 mA, V CE = 5. 0 V 0.6 0.75
0.82 V
V
SMALL SIGNAL CHARACTERISTICS
fTCurrent Gain - Bandwidth Product IC = 10 mA , VCE = 5.0,
f = 100 mHz 200 MHz
Cobo Output Capacitance VCB = 10 V, f = 1.0 MHz 3.5 pF
NF Noise Figure IC = 0.2 m A, VCE = 5.0,
RS = 2.0 kΩ, f = 1.0 kHz,
BW = 200 Hz
2.5 dB
Typical Characteristics
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Typical Pulsed Current Gain
vs Collector Current
0.01 0.1 1 10 100
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h - TYPICAL PULSED CURRENT GAIN
C
FE
125 °C
25 °C
- 40 °C
V = 5V
CE
C ollector -Em itter Satur ati o n
Vo ltage vs C o llector Cu rrent
0.1 1 10 100 300
0
0.05
0.1
0.15
0.2
0.25
0.3
I - COLLECTOR CURRENT (mA)
V - COLL E CT OR EMITT E R VOLTAGE ( V)
C
CESAT
25 °C
- 4 0 °C
125 °C
β= 10
PNP Multi-Chip General Purpose Amplifier
(continued)
BC857S
Typical Characteristics (continued)
Col lector Saturatio n Region
100 300 700 2000 4000
0
1
2
3
4
I - BASE CURRENT (uA)
V - COLLECTO R- EM ITT ER VO LT AGE (V)
CE
B
50 mA 300 mA
100 u A
Ta = 25°C
Ic =
Ω
CER
Coll ector-Em itter Breakdown
Voltage with Resi stance
Between Emitter-Base
0.1 1 10 100 1000
70
75
80
85
90
95
RE SI STAN CE (k )
BV - BREAKDOWN VOL T AGE (V)
Input and Output Capac itance
vs R ev er se Volta ge
0.1 1 10 100
10
100
V - COLLECTOR VOLTAGE ( V)
CAP ACITANC E (pF)
Cib
Cob
f = 1.0 MHz
CE
Coll ector-Cutoff Curre nt
vs A mb ient Temp er atu re
25 50 75 100 125
0.01
0.1
1
10
100
T - AM BIE NT TEMP ERATURE ( C)
I - C OLLECTOR CU RRENT (nA)
A
CBO
°
V = 50V
CB
B ase-Emitter Satur ati o n
Vo ltage vs C o ll ector Cu rrent
0.1 1 10 100 300
0
0.2
0.4
0.6
0.8
1
1.2
I - COLLECTOR CURRE NT (mA)
V - BA SE EMITTE R VOLTAGE (V)
C
BESAT
β= 10
25 °C
- 40 °C
125 °C
Base Emitter ON Voltage vs
C o llector Current
0.1 1 10 100 200
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - B ASE EMITTER ON VOLTAGE (V)
C
BEON
V = 5V
CE
25 °C
- 40°C
125 °C
PNP Multi-Chip General Purpose Amplifier
(continued)
BC857S
BC857S
PNP Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Switching Times vs
Collector Current
10 20 30 50 100 200 300
0
30
60
90
120
150
180
210
240
270
300
I - COLLECTOR CURRENT (mA)
TIME (nS)
IB1 = IB2 = Ic / 10
V = 10 V
C
cc
ts
td
tftr
Gain Ba ndwidth Produc t
vs Collecto r Current
1102050100150
0
10
20
30
40
I - COLLECTOR CURR ENT ( mA)
f - GAIN BAND WI DT H PRODU CT (MHz )
C
T
V = 5V
ce
Power Dissipatio n vs
Amb ien t Temperature
0 255075100125150
0
100
200
300
400
500
TEM PE RATURE ( C)
P - POWER DISSIPATION (W)
°
D
SC70-6
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not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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